PSMN034-100PS_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Objective data sheet Rev. 02 — 1 March 2010 3 of 15
NXP Semiconductors
PSMN034-100PS
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 100 V
V
DGR
drain-gate voltage T
j
≤ 175 °C; T
j
≥ 25 °C; R
GS
=20kΩ -100V
V
GS
gate-source voltage -20 20 V
I
D
drain current V
GS
=10V; T
mb
= 100 °C; see Figure 1 -22A
V
GS
=10V; T
mb
=25°C; see Figure 1 -32A
I
DM
peak drain current t
p
≤ 10 µs; pulsed; T
mb
=25°C; see Figure 3 -127A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 -86W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
T
sld(M)
peak soldering
temperature
-260°C
Source-drain diode
I
S
source current T
mb
=25°C - 32 A
I
SM
peak source current t
p
≤ 10 µs; pulsed; T
mb
=25°C - 127 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
V
GS
=10V; T
j(init)
=25°C; I
D
=32A; V
sup
≤ 100 V;
unclamped; R
GS
=50Ω
-42mJ
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aae103
0
10
20
30
40
0 50 100 150 200
T
mb
(
°
C)
I
D
(A)
T
mb
(°C)
0 20015050 100
40
80
120
P
der
(%)
0
