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PSMN034-100PS,127

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
PSMN034-100PS_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Objective data sheet Rev. 02 — 1 March 2010 6 of 15
NXP Semiconductors
PSMN034-100PS
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=0.25mA; V
GS
=0V; T
j
=-55°C 90 - - V
I
D
=0.25mA; V
GS
=0V; T
j
=25°C 100 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
= V
GS
; T
j
= 175 °C; see Figure 9 1- - V
I
D
=1mA; V
DS
= V
GS
; T
j
=25°C; see Figure 10
and 9
234V
I
D
=1mA; V
DS
= V
GS
; T
j
=-55°C; see Figure 9
and 10
--4.8V
I
DSS
drain leakage current V
DS
=100V; V
GS
=0V; T
j
= 125 °C - - 50 µA
V
DS
=100V; V
GS
=0V; T
j
= 25 °C - 0.02 1 µA
I
GSS
gate leakage current V
GS
=20V; V
DS
=0V; T
j
= 25 °C - 10 100 nA
V
GS
=-20V; V
DS
=0V; T
j
= 25 °C - 10 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=15A; T
j
= 100 °C;
see Figure 11
--62mΩ
V
GS
=10V; I
D
=15A; T
j
= 175 °C;
see Figure 11
- 82.1 96 mΩ
V
GS
=10V; I
D
=15A; T
j
=25°C; see Figure 16 - 29.3 34.5 mΩ
R
G
internal gate resistance
(AC)
f=1MHz - 1 - Ω
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=15A; V
DS
=50V; V
GS
=10V;
see Figure 12 and 13
- 23.8 - nC
I
D
=0A; V
DS
=0V; V
GS
=10V - 19 - nC
Q
GS
gate-source charge I
D
=15A; V
DS
=50V; V
GS
=10V;
see Figure 12
and 13
-5.5-nC
Q
GS(th)
pre-threshold
gate-source charge
I
D
=15A; V
DS
=50V; V
GS
=10V;
see Figure 12
-3.6-nC
Q
GS(th-pl)
post-threshold
gate-source charge
-1.9-nC
Q
GD
gate-drain charge I
D
=15A; V
DS
=50V; V
GS
=10V;
see Figure 12
and 13
-6.9-nC
V
GS(pl)
gate-source plateau
voltage
V
DS
=50V; see Figure 12 and 13 -4.4-V
C
iss
input capacitance V
DS
=50V; V
GS
= 0 V; f = 1 MHz; T
j
=25°C;
see Figure 14
- 1201 - pF
C
oss
output capacitance - 94 - pF
C
rss
reverse transfer
capacitance
-61-pF
t
d(on)
turn-on delay time V
DS
=50V; R
L
=3.3Ω; V
GS
=10V;
R
G(ext)
=4.7Ω; T
j
=25°C
-12-ns
t
r
rise time - 10 - ns
t
d(off)
turn-off delay time - 28 - ns
t
f
fall time -9-ns
PSMN034-100PS_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Objective data sheet Rev. 02 — 1 March 2010 7 of 15
NXP Semiconductors
PSMN034-100PS
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
Source-drain diode
V
SD
source-drain voltage I
S
=15A; V
GS
=0V; T
j
= 25 °C; see Figure 17 - 0.85 1.2 V
t
rr
reverse recovery time I
S
=5A; dI
S
/dt = 100 A/µs; V
GS
=0V;
V
DS
=50V
-38-ns
Q
r
recovered charge - 59 - nC
Table 6. Characteristics
…continued
Symbol Parameter Conditions Min Typ Max Unit
Fig 5. Forward transconductance as a function of
drain current; typical values
Fig 6. Input and reverse capacitances as a function of
gate-source voltage; typical values
Fig 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 8. Output characteristics: drain current as a
function of drain-source voltage; typical values
003aae110
0
10
20
30
40
50
010203040
I
D
(A)
g
fs
(S)
003aae109
0
500
1000
1500
2000
04812
V
GS
(V)
C
(pF)
C
iss
C
rss
003aae111
20
40
60
80
100
0 5 10 15 20
V
GS
(V)
R
DSon
(mΩ)
003aae106
0
10
20
30
40
012345
V
DS
(V)
I
D
(A)
4.5
4
V
GS
(V) =
4.7
5.0
5.5
6.5
10.0
PSMN034-100PS_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Objective data sheet Rev. 02 — 1 March 2010 8 of 15
NXP Semiconductors
PSMN034-100PS
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Fig 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 12. Gate charge waveform definitions
T
j
(°C)
−60 180120060
003aad280
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min
03aa35
V
GS
(V)
0642
10
−4
10
−5
10
−2
10
−3
10
−1
I
D
(A)
10
−6
min typ max
003aad774
0
0.8
1.6
2.4
3.2
-60 0 60 120 180
T
j
(°C)
a
003aaa5
08
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
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PSMN034-100PS,127

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Buy PSMN034-100PS,127
Manufacturer:
Nexperia
Description:
MOSFET N-CH 100V STD LEVEL MOSFET
Lifecycle:
New from this manufacturer.
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