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AUIRF6218S

P1-P3P4-P6P7-P9P10-P12
www.irf.com 1
08/20/2012
AUIRF6218S
AUIRF6218L
HEXFET
®
Power MOSFET
Features
l Advanced Planar Technology
l Low On-Resistance
l P-Channel
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and rugge-
dized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in
Automotive and a wide variety of other applications.
AUTOMOTIVE GRADE
G
D
S
Gate
Drain
Source
TO-262
AUIRF6218L
G
D
S
D
D
2
Pak
AUIRF6218S
S
D
G
D
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
V
(BR)DSS
-150V
R
DS(on)
max 150m
I
D
-27A
S
D
G
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Maximum Power Dissipation W
Linear Derating Factor W/°C
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
I
AR
Avalanche Current
A
dv/dt
Peak Diode Recovery dv/dt
V/ns
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from cas
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.61 °C/W
R
JA
Junction-to-Ambient
(P CB M ounted, s teady s tate)
––– 40
250
Max.
-27
-19
-110
-150
± 20
300
10 lbf•in (1.1N•m)
-55 to + 175
210
-16
AUIRF6218S/L
2 www.irf.com
08/20/2012
S
D
G
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 1.6mH, R
G
= 25, I
AS
= -17A.
I
SD
-17A, di/dt -520A/μs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width 300μs; duty cycle 2%.
R
q
is measured at T
J
of approximately 90°C.
When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage -150 ––– ––– V
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient ––– -0.17 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 120 150
m
V
GS(th)
Gate Threshold Voltage -3.0 ––– -5.0 V
gfs Forward Transconductance 11 ––– ––– S
I
DSS
Drain-to-Source Leakage Current ––– ––– -25 μA
––– ––– -250
I
GSS
Gate-to-Source Forward Leakage ––– ––– -100 nA
Gate-to-Source Reverse Leakage ––– ––– 100
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
g
Total Gate Charge ––– 71 110
Q
gs
Gate-to-Source Charge ––– 21 ––– nC
Q
gd
G ate-to-Drain ("Miller") Char ge ––– 32 –––
t
d(on)
Turn-On Delay Time ––– 21 –––
t
r
Rise Time ––– 70 ––– ns
t
d(off)
Turn-Off Delay Time ––– 35 –––
t
f
Fall Time ––– 30 –––
C
iss
Input Capacitance ––– 2210 –––
C
oss
Output Capacitance ––– 370 –––
C
rs s
Reverse Transfer Capacitance ––– 89 ––– pF
C
oss
Output Capacitance ––– 2220 –––
C
oss
Output Capacitance ––– 170 –––
C
oss
eff. Effective Output Capacitance ––– 340 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– -27
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– -110
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– -1.6 V
t
rr
Reverse Recovery Time ––– 150 ––– ns
Q
rr
Reverse Recovery Charge ––– 860 ––– nC
V
GS
= 0V, V
DS
= -1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= -120V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to -120V
V
GS
= -10V
V
DD
= -75V
I
D
= -16A
R
G
= 3.9
T
J
= 25°C, I
S
= -16A, V
GS
= 0V
T
J
= 25°C, I
F
= -16A, V
DD
= -25V
di/dt = -100A/μs
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -16A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -120V, V
GS
= 0V
V
DS
= -120V, V
GS
= 0V, T
J
= 150°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Conditions
V
GS
= -10V
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0MHz
V
DS
= -50V, I
D
= -16A
Conditions
I
D
= -16A
V
DS
= -120V
V
GS
= -20V
V
GS
= 20V
AUIRF6218S/L
www.irf.com 3
08/20/2012
Qualification Information
†
TO-262 N/A
D
2
Pak
MSL1
Class H2 (+/- 3000V)
††
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000V)
††
AEC-Q101-005
RoHS Compliant Yes
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level
ESD
Machine Model
Class M4 (+/- 600V)
††
AEC-Q101-002
Human Body Model
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Highest passing voltage.
P1-P3P4-P6P7-P9P10-P12

AUIRF6218S

Mfr. #:
Buy AUIRF6218S
Manufacturer:
Infineon / IR
Description:
MOSFET Automotive MOSFET 27A, 71 nC, D2Pak
Lifecycle:
New from this manufacturer.
Delivery:
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