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AUIRF6218S

P1-P3P4-P6P7-P9P10-P12
AUIRF6218S/L
4 www.irf.com
08/20/2012
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
2 4 6 8 10 12
-V
GS
, Gate-to-Source Voltage (V)
1.0
10
100
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 50V
60μs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= -27A
V
GS
= -10V
0.1 1 10 100
-V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP -15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
60μs PULSE WIDTH
Tj = 25°C
-4.5V
0.1 1 10 100
-V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
-4.5V
60μs PULSE WIDTH
Tj = 175°C
VGS
TOP -15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
AUIRF6218S/L
www.irf.com 5
08/20/2012
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
1 10 100
-V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-V
SD
, Source-to-Drain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
-
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
1 10 100 1000
-V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100μsec
Tc = 25°C
Tj = 175°C
Single Pulse
0 1020304050607080
Q
G
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
-
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 120V
V
DS
= 75V
V
DS
= 30V
I
D
= -16A
AUIRF6218S/L
6 www.irf.com
08/20/2012
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 9. Maximum Drain Current vs.
Ambient Temperature
V
DS
V
GS
Pulse Width µs
Duty Factor 
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
5
10
15
20
25
30
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) i (sec)
0.264 0.000285
0.206 0.001867
0.140 0.013518
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
C
Ci iRi
Ci= iRi
P1-P3P4-P6P7-P9P10-P12

AUIRF6218S

Mfr. #:
Buy AUIRF6218S
Manufacturer:
Infineon / IR
Description:
MOSFET Automotive MOSFET 27A, 71 nC, D2Pak
Lifecycle:
New from this manufacturer.
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