Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
DFN1010B- 6
PQMD3
NPN/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
26 October 2015 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
NPN/PNP double Resistor-Equipped Transistors (RET) in a leadless ultra small
DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package.
NPN/NPN complement: PQMH11
PNP/PNP complement: PQMB11
2. Features and benefits
100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Low package height of 0.37 mm
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
3. Applications
Low current peripheral driver
Control of IC inputs
Replaces general-purpose transistors in digital applications
Mobile applications
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
V
CEO
collector-emitter
voltage
open base - - 50 V
I
O
output current - - 100 mA
Per transistor; for the PNP transistor with negative polarity
R1 bias resistor 1 [1] 7 10 13
R2/R1 bias resistor ratio
T
amb
= 25 °C
[1] 0.8 1 1.2
[1] See section "Test information" for resistor calculation and test conditions.
NXP Semiconductors
PQMD3
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
PQMD3 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 26 October 2015 2 / 17
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 GND1 GND (emitter) TR1
2 I1 input ( base) TR1
3 O2 output (collector) TR2
4 GND2 GND (emitter) TR2
5 I2 input ( base) TR2
6 O1 output (collector) TR1
7 O1 output (collector) TR1
8 O2 output (collector) TR2
Transparent top view
1 6
7
8
2
3
5
4
DFN1010B-6 (SOT1216)
O1 I2 GND2
GND1
I1 O2
R2
TR1
TR2
R1
R2 R1
aaa-007379
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PQMD3 DFN1010B-6 DFN1010B-6: plastic thermal enhanced ultra thin small
outline package; no leads; 6 terminals
SOT1216

PQMD3Z

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PQMD3/DFN1010B-6/REEL 7" Q2/T3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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