NXP Semiconductors
PQMD3
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
PQMD3 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 26 October 2015 9 / 17
T
amb
= 25 °C
Fig. 12. PNP transistor: Collector current as a function
of collector-emitter voltage; typical values
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -40 °C
Fig. 13. PNP transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
V
CE
= -0.3 V
(1) T
amb
= -40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 14. PNP transistor: On-state input voltage as a
function of collector current; typical values
V
CE
= -5 V
(1) T
amb
= -40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 15. PNP transistor: Off-state input voltage as a
function of collector current; typical values
NXP Semiconductors
PQMD3
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
PQMD3 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 26 October 2015 10 / 17
f = 1 MHz; T
amb
= 25 °C
Fig. 16. PNP transistor: Collector capacitance as a
function of collector-base voltage; typical
values
V
CE
= -5 V; T
amb
= 25 °C
Fig. 17. PNP transistor: Transition frequency as a
function of collector current; typical values of
built-in transistor
11. Test information
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
11.2 Resistor calculation
Calculation of bias resistor 1 (R1)
Calculation of bias resistor ratio (R2/R1)
NXP Semiconductors
PQMD3
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
PQMD3 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 26 October 2015 11 / 17
R1
R2
GND
I
I1
; I
I2
n.c.
I
I3
; I
I4
aaa-020082
Fig. 18. NPN transistor: Resistor test circuit
R1
R2
GND
I
I1
; I
I2
n.c.
I
I3
; I
I4
aaa-020083
Fig. 19. PNP transistor: Resistor test circuit
11.3 Resistor test conditions
Table 8. Resistor test conditions
Per transistor; for the PNP transistor with negative polarity
Test conditionsR1 (kΩ) R2 (kΩ)
I
I1
I
I2
I
I3
I
I4
10 10 350 μA 450 μA -350 μA -450 μA

PQMD3Z

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PQMD3/DFN1010B-6/REEL 7" Q2/T3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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