NXP Semiconductors
PQMD3
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
PQMD3 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 26 October 2015 10 / 17
V
CB
(V)
0 -50-40-20 -30-10
006aac777
2
4
6
C
c
(pF)
0
f = 1 MHz; T
amb
= 25 °C
Fig. 16. PNP transistor: Collector capacitance as a
function of collector-base voltage; typical
values
006aac763
I
C
(mA)
-10
-1
-10
2
-10-1
10
2
10
3
f
T
(MHz)
10
V
CE
= -5 V; T
amb
= 25 °C
Fig. 17. PNP transistor: Transition frequency as a
function of collector current; typical values of
built-in transistor
11. Test information
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
11.2 Resistor calculation
•
Calculation of bias resistor 1 (R1)
•
Calculation of bias resistor ratio (R2/R1)