OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MT18HTS25672RHZ-80EH1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23
DDR2 SDRAM SORDIMM
MT18HTS25672RHZ – 2GB
Features
•
200-pin, small-outline registered dual in-line memo-
ry module (SORDIMM)
•
Fast data transfer rates: PC2-4200, PC2-5300, or
PC2-6400
•
2GB (256 Meg x 72)
•
Supports ECC error detection and correction
•
V
DD
= 1.8V
•
V
DDSPD
= 3.0–3.6V
•
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
•
Differential data strobe (DQS, DQS#) option
•
4n-bit prefetch architecture
•
Multiple internal device banks for concurrent opera-
tion
•
Programmable CAS latency (CL)
•
Posted CAS additive latency (AL)
•
WRITE latency = READ latency - 1
t
CK
•
Programmable burst lengths (BL): 4 or 8
•
Adjustable data-output drive strength
•
64ms, 8192-cycle refresh
•
On-die termination (ODT)
•
Serial presence detect (SPD) with EEPROM
•
Phase-lock loop (PLL) to reduce system clock line
loading
•
Gold edge contacts
•
Dual rank, using 2Gb TwinDie™ devices
•
Halogen-free
•
Combination Temp Sensor/EEPROM
Figure 1: 200-Pin SORDIMM (R/C B)
Module height: 30mm (1.181 in)
Options Marking
•
Operating temperature
– Commercial (0°C ≤ T
A
≤ +70°C)
None
– Industrial (–40°C ≤ T
A
≤ +85°C)
1
I
•
Package
–
200-pin DIMM (Halogen-free) Z
•
Frequency/CL
2
–
2.5 @ CL = 5 (DDR2-800) -80E
–
2.5 @ CL = 6 (DDR2-800) -800
–
3.0ns @ CL = 5 (DDR2-667) -667
Notes:
1. Contact Micron for industrial temperature
module offerings
2. CL = CAS (READ) latency; registered mode
will add one clock cycle to CL.
Table 1: Key Timing Parameters
Speed
Grade
Industry
Nomenclature
Data Rate (MT/s) t
RCD
(ns)
t
RP
(ns)
t
RC
(ns)CL = 6 CL = 5 CL = 4 CL = 3
-80E PC2-6400 800 800 533 400 12.5 12.5 55
-800 PC2-6400 800 667 533 400 15 15 55
-667 PC2-5300
–
667 553 400 15 15 55
-53E PC2-4200
– –
553 400 15 15 55
-40E PC2-3200
– –
400 400 15 15 55
2GB (x72, ECC, DR) 200-Pin DDR2 SDRAM SORDIMM
Features
PDF: 09005aef83f287c1
hts18c256x72rhz.pdf - Rev. A 3/10 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Table 2: Addressing
Parameter 1GB
Refresh count 8K
Row address 16K A[13:0]
Device bank address 8 BA[2:0]
Device configuration 2Gb TwinDie (256 Meg x 8)
Column address 1K A[9:0]
Module rank address 2 S#[1:0]
Table 3: Part Numbers and Timing Parameters – 2GB Modules
Base device: MT47H256M8,
1
2Gb DDR2 TwinDie SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT18HTS25672RH(I)Z-80E__ 2GB 256 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT18HTS25672RH(I)Z-800__ 2GB 256Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT18HTS25672RH(I)Z-667__ 2GB 256 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5
Notes:
1. The data sheet for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MT18HTS25672RHZ-80EG1.
2GB (x72, ECC, DR) 200-Pin DDR2 SDRAM SORDIMM
Features
PDF: 09005aef83f287c1
hts18c256x72rhz.pdf - Rev. A 3/10 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
Pin Assignments
Table 4: Pin Assignments
200-Pin SORDIMM Front 200-Pin SORDIMM Back
Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol
1 V
REF
51 DQ18 101 V
DD
151 V
SS
2 V
SS
52 V
SS
102 A6 152 V
SS
3 DQ0 53 DQ19 103 A5 153 DQS5# 4 DQ4 54 DQ28 104 A4 154 DM5
5 V
SS
55 V
SS
105 A3 155 DQS5 6 DQ5 56 DQ29 106 V
DD
156 V
SS
7 DQ1 57 DQ24 107 A2 157 V
SS
8 V
SS
58 V
SS
108 A1 158 DQ46
9 DQS0# 59 DQ25 109 V
DD
159 DQ42 10 DM0 60 DM3 110 A0 160 DQ47
11 DQS0 61 V
SS
111 A10 161 DQ43 12 V
SS
62 V
SS
112 BA1 162 V
SS
13 V
SS
63 DQS3# 113 BA0 163 V
SS
14 DQ6 64 DQ30 114 V
DD
164 DQ52
15 DQ2 65 DQS3 115 RAS# 165 DQ48 16 DQ7 66 DQ31 116 WE# 166 DQ53
17 DQ3 67 V
SS
117 V
DD
167 DQ49 18 V
SS
68 V
SS
118 S0# 168 V
SS
19 V
SS
69 DQ26 119 CAS# 169 V
SS
20 DQ12 70 CB4 120 ODT0 170 DM6
21 DQ8 71 DQ27 121 S1# 171 DQS6# 22 DQ13 72 CB5 122 A13 172 V
SS
23 DQ9 73 V
SS
123 V
DD
173 DQS6 24 V
SS
74 V
SS
124 V
DD
174 DQ54
25 V
SS
75 CB0 125 ODT1 175 V
SS
26 DM1 76 DM8 126 CK0 176 DQ55
27 DQS1# 77 CB1 127 NC 177 DQ50 28 V
SS
78 V
SS
128 CK0# 178 V
SS
29 DQS1 79 V
SS
129 DQ32 179 DQ51 30 DQ14 80 CB6 130 V
SS
180 DQ60
31 V
SS
81 DQS8# 131 V
SS
181 V
SS
32 DQ15 82 CB7 132 DQ36 182 DQ61
33 DQ10 83 DQS8 133 DQ33 183 DQ56 34 V
SS
84 V
SS
134 DQ37 184 V
SS
35 DQ11 85 V
SS
135 DQS4# 185 DQ57 36 DQ20 86 CB2 136 V
SS
186 DM7
37 V
SS
87 CKE0 137 DQS4 187 V
SS
38 DQ21 88 CB3 138 DM4 188 DQ62
39 DQ16 89 CKE1 139 V
SS
189 DQS7# 40 V
SS
90 V
SS
140 V
SS
190 V
SS
41 DQ17 91 EVENT# 141 DQ34 191 DQS7 42 RESET# 92 BA2 142 DQ38 192 DQ63
43 V
SS
93 V
DD
143 DQ35 193 DQ58 44 DM2 94 NC 144 DQ39 194 SDA
45 DQS2# 95 A12 145 V
SS
195 V
SS
46 V
SS
96 A11 146 V
SS
196 SCL
47 DQS2 97 A9 147 DQ40 197 DQ59 48 DQ22 98 V
DD
148 DQ44 198 SA1
49 V
SS
99 A7 149 DQ41 199 V
DDSPD
50 DQ23 100 A8 150 DQ45 200 SA0
2GB (x72, ECC, DR) 200-Pin DDR2 SDRAM SORDIMM
Pin Assignments
PDF: 09005aef83f287c1
hts18c256x72rhz.pdf - Rev. A 3/10 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23

MT18HTS25672RHZ-80EH1

Mfr. #:
Buy MT18HTS25672RHZ-80EH1
Manufacturer:
Micron
Description:
MODULE DDR2 SDRAM 2GB 200SORDIMM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet