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IRFS4227TRLPBF

P1-P3P4-P6P7-P9P10-P10
www.irf.com 1
12/06/08
IRFS4227PbF
IRFSL4227PbF
Notes through are on page 8
PDP SWITCH
* R
θJC
(end of life) for D
2
Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
V
DS
max
200 V
V
DS (Avalanche)
typ.
240 V
R
DS(ON)
typ. @ 10V
22
m
I
RP
max @ T
C
= 100°C
130 A
T
J
max
175 °C
Key Parameters
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low E
PULSE
Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low Q
G
for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for
Robustness and Reliability
GDS
Gate Drain Source
S
D
G
D
2
Pak
IRFS4227PbF
TO-262
IRFSL4227PbF
S
D
G
S
D
G
D
D
Absolute Maximum Ratings
Parameter Units
V
GS
Gate-to-Source Voltage V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
I
RP
@ T
C
= 100°C
Repetitive Peak Current
P
D
@T
C
= 25°C
Power Dissipation
P
D
@T
C
= 100°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw N
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
––– 0.45*
R
θJA
Junction-to-Ambient (PCB Mounted) D
2
Pak
––– 40
A
W
°C
130
300
-40 to + 175
10lbf in (1.1N m)
330
190
2.2
Max.
44
260
62
±30
This HEXFET
®
Power MOSFET is specifically designed for Sustain, Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to
achieve low on-resistance per silicon area and low E
PULSE
rating. Additional features of this MOSFET a r e
175°C operating junction temperature and high repetitive peak current capability. These features
combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications
Description
PD - 96131A
IRFS/SL4227PbF
2 www.irf.com
S
D
G
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 200 ––– ––– V
∆Β
V
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 170 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 22 26
mΩ
V
GS(th)
Gate Threshold Voltage 3.0 ––– 5.0 V
∆V
GS(th)
/∆T
J
Gate Threshold Voltage Coefficient ––– -13 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 200 µA
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
g
fs
Forward Transconductance 49 ––– ––– S
Q
g
Total Gate Charge ––– 70 98 nC
Q
gd
Gate-to-Drain Charge ––– 23 –––
t
d(on)
Turn-On Delay Time ––– 33 –––
t
r
Rise Time ––– 20 ––– ns
t
d(off)
Turn-Off Delay Time ––– 21 –––
t
f
Fall Time ––– 31 –––
t
st
Shoot Through Blocking Time 100 ––– ––– ns
E
PULSE
Energy per Pulse µJ
C
iss
Input Capacitance ––– 4600 –––
C
oss
Output Capacitance ––– 460 ––– pF
C
rss
Reverse Transfer Capacitance ––– 91 –––
C
oss
eff.
Effective Output Capacitance ––– 360 –––
L
D
Internal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from package
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy mJ
E
AR
Repetitive Avalanche Energy
mJ
V
DS(Avalanche)
Repetitive Avalanche Voltage V
I
AS
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
@ T
C
= 25°C
Continuous Source Current
(Body Diode) A
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 100 150 ns
Q
rr
Reverse Recovery Charge ––– 430 640 nC
62
260
––– –––
––– –––
MOSFET symbol
V
DS
= 25V, I
D
= 46A
V
DD
= 100V, I
D
= 46A, V
GS
= 10V
Conditions
and center of die contact
V
DD
= 160V, V
GS
= 15V, R
G
= 4.7Ω
V
DS
= 160V, R
G
= 4.7Ω, T
J
= 25°C
L = 220nH, C= 0.4µF, V
GS
= 15V
V
DS
= 160V, R
G
= 4.7Ω, T
J
= 100°C
V
DS
= 25V
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 200V, V
GS
= 0V
V
GS
= 0V, V
DS
= 0V to 160V
V
DS
= 200V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
GS
= 0V
L = 220nH, C= 0.4µF, V
GS
= 15V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 46A
T
J
= 25°C, I
F
= 46A, V
DD
= 50V
di/dt = 100A/µs
T
J
= 25°C, I
S
= 46A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
Typ. Max.
ƒ = 1.0MHz,
––– 140
46
37
–––
–––
240 –––
––– 570 –––
––– 910 –––
V
DD
= 100V, V
GS
= 10V
I
D
= 46A
R
G
= 2.5Ω
See Fig. 22
IRFS/SL4227PbF
www.irf.com 3
Fig 6. Typical E
PULSE
vs. Drain Current
Fig 5. Typical E
PULSE
vs. Drain-to-Source Voltage
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
3.0 4.0 5.0 6.0 7.0 8.0
V
GS
, Gate-to-Source Voltage (V)
0.1
1.0
10.0
100.0
1000.0
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
V
DS
= 25V
≤ 60µs PULSE WIDTH
T
J
= 25°C
T
J
= 175°C
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (°C)
0.0
1.0
2.0
3.0
4.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 46A
V
GS
= 10V
130 140 150 160 170 180 190
I
D,
Peak Drain Current (A)
0
200
400
600
800
1000
E
n
e
r
g
y
p
e
r
p
u
l
s
e
(
µ
J
)
L = 220nH
C = Variable
100°C
25°C
110 120 130 140 150 160 170
V
DS,
Drain-to -Source Voltage (V)
100
200
300
400
500
600
700
800
900
1000
E
n
e
r
g
y
p
e
r
p
u
l
s
e
(
µ
J
)
L = 220nH
C = 0.4µF
100°C
25°C
0.1 1 10
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60µs PULSE WIDTH
Tj = 175°C
7.0V
VGS
TOP 15V
10V
8.0V
BOTTOM 7.0V
0.1 1 10
V
DS
, Drain-to-Source Voltage (V)
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤ 60µs PULSE WIDTH
Tj = 25°C
7.0V
VGS
TOP 15V
10V
8.0V
BOTTOM 7.0V
P1-P3P4-P6P7-P9P10-P10

IRFS4227TRLPBF

Mfr. #:
Buy IRFS4227TRLPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 200V 62A 26mOhm 70nC Qg
Lifecycle:
New from this manufacturer.
Delivery:
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