IRFS4227TRLPBF

IRFS/SL4227PbF
4 www.irf.com
Fig 11. Maximum Drain Current vs. Case Temperature
Fig 8. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Safe Operating Area
Fig 7. Typical E
PULSE
vs.Temperature
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
25 50 75 100 125 150
Temperature (°C)
0
200
400
600
800
1000
1200
1400
E
n
e
r
g
y
p
e
r
p
u
l
s
e
(
µ
J
)
L = 220nH
C= 0.4µF
C= 0.3µF
C= 0.2µF
0.2 0.4 0.6 0.8 1.0 1.2
V
SD
, Source-to-Drain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 20 40 60 80 100 120
Q
G
Total Gate Charge (nC)
0
4
8
12
16
20
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 160V
V
DS
= 100V
V
DS
= 40V
I
D
= 46A
1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1µsec
10µsec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
25 50 75 100 125 150 175
T
C
, CaseTemperature (°C)
0
10
20
30
40
50
60
70
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
IRFS/SL4227PbF
www.irf.com 5
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 15. Threshold Voltage vs. Temperature
Fig 14. Maximum Avalanche Energy Vs. Temperature
Fig 13. On-Resistance Vs. Gate Voltage
Fig 16. Typical Repetitive peak Current vs.
Case temperature
Ri (°C/W) τi (sec)
0.08698 0.000074
0.2112 0.001316
0.1506 0.009395
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci i/Ri
Ci= τi/Ri
-75 -50 -25 0 25 50 75 100 125 150 175
T
J
, Temperature ( °C )
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
25 50 75 100 125 150 175
Case Temperature (°C)
0
40
80
120
160
200
R
e
p
e
t
i
t
i
v
e
P
e
a
k
C
u
r
r
e
n
t
(
A
)
ton= 1µs
Duty cycle = 0.25
Half Sine Wave
Square Pulse
5 6 7 8 9 10
V
GS
, Gate-to-Source Voltage (V)
0.00
0.04
0.08
0.12
0.16
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
)
T
J
= 25°C
T
J
= 125°C
I
D
= 46A
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
100
200
300
400
500
600
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP
8.5A
14A
BOTTOM
37A
IRFS/SL4227PbF
6 www.irf.com
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET
®
Power MOSFETs
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
* V
GS
= 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
R
G
V
DD
di/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Inductor Current
Fig 19b. Unclamped Inductive Waveforms
Fig 19a. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
V
GS
Fig 20a. Gate Charge Test Circuit
Fig 20b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2 Qgd Qgodr
1K
VCC
DUT
0
L

IRFS4227TRLPBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 200V 62A 26mOhm 70nC Qg
Lifecycle:
New from this manufacturer.
Delivery:
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