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MMBT3906WT1G

P1-P3P4-P6P7-P9P10-P12P13-P13
© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 9
1 Publication Order Number:
MMBT3904WT1/D
MMBT3904WT1G, NPN,
SMMBT3904WT1G, NPN,
MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
General Purpose
Transistors
NPN and PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−323/SC−70 package which
is designed for low power surface mount applications.
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
V
CEO
40
−40
Vdc
Collector−Base Voltage
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
V
CBO
60
−40
Vdc
Emitter−Base Voltage
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
V
EBO
6.0
−5.0
Vdc
Collector Current − Continuous
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
I
C
200
−200
mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation (Note 1)
@T
A
= 25°C
P
D
150 mW
Thermal Resistance, Junction−to−Ambient
R
q
JA
833 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
COLLECTOR
3
1
BASE
2
EMITTER
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Device Package Shipping
†
ORDERING INFORMATION
xx = AM for MMBT3904WT1,
SMMBT3904WT
= 2A for MMBT3906WT1,
SMMBT3906WT1
M = Date Code*
G = Pb−Free Package
MMBT3906WT1G,
SMMBT3906WT1G
SC−70/
SOT−323
(Pb−Free)
3000 / Tape &
Reel
MMBT3904WT1G,
SMMBT3904WT1G
SC−70/
SOT−323
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
SC−70 (SOT−323)
CASE 419
STYLE 3
3
1
2
MARKING DIAGRAM
xx M G
G
1
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2)
(I
C
= 1.0 mAdc, I
B
= 0) MMBT3904WT1, SMMBT3904WT1
(I
C
= −1.0 mAdc, I
B
= 0) MMBT3906WT1, SMMBT3906WT1
V
(BR)CEO
40
−40
−
−
Vdc
Collector−Base Breakdown Voltage
(I
C
= 10 mAdc, I
E
= 0) MMBT3904WT1, SMMBT3904WT1
(I
C
= −10 mAdc, I
E
= 0) MMBT3906WT1, SMMBT3906WT1
V
(BR)CBO
60
−40
−
−
Vdc
Emitter−Base Breakdown Voltage
(I
E
= 10 mAdc, I
C
= 0) MMBT3904WT1, SMMBT3904WT1
(I
E
= −10 mAdc, I
C
= 0) MMBT3906WT1, SMMBT3906WT1
V
(BR)EBO
6.0
−5.0
−
−
Vdc
Base Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc) MMBT3904WT1, SMMBT3904WT1
(V
CE
= −30 Vdc, V
EB
= −3.0 Vdc) MMBT3906WT1, SMMBT3906WT1
I
BL
−
−
50
−50
nAdc
Collector Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc) MMBT3904WT1, SMMBT3904WT1
(V
CE
= −30 Vdc, V
EB
= −3.0 Vdc) MMBT3906WT1, SMMBT3906WT1
I
CEX
−
−
50
−50
nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc) MMBT3904WT1, SMMBT3904WT1
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
(I
C
= −0.1 mAdc, V
CE
= −1.0 Vdc) MMBT3906WT1, SMMBT3906WT1
(I
C
= −1.0 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −10 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −50 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −100 mAdc, V
CE
= −1.0 Vdc)
h
FE
40
70
100
60
30
60
80
100
60
30
−
−
300
−
−
−
−
300
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc) MMBT3904WT1, SMMBT3904WT1
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
(I
C
= −10 mAdc, I
B
= −1.0 mAdc) MMBT3906WT1, SMMBT3906WT1
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
V
CE(sat)
−
−
−
−
0.2
0.3
−0.25
−0.4
Vdc
Base−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc) MMBT3904WT1, SMMBT3904WT1
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
(I
C
= −10 mAdc, I
B
= −1.0 mAdc) MMBT3906WT1, SMMBT3906WT1
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
V
BE(sat)
0.65
−
−0.65
−
0.85
0.95
−0.85
−0.95
Vdc
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
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3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz) MMBT3904WT1, SMMBT3904WT1
(I
C
= −10 mAdc, V
CE
= −20 Vdc, f = 100 MHz) MMBT3906WT1, SMMBT3906WT1
f
T
300
250
−
−
MHz
Output Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz) MMBT3904WT1, SMMBT3904WT1
(V
CB
= −5.0 Vdc, I
E
= 0, f = 1.0 MHz) MMBT3906WT1, SMMBT3906WT1
C
obo
−
−
4.0
4.5
pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz) MMBT3904WT1, SMMBT3904WT1
(V
EB
= −0.5 Vdc, I
C
= 0, f = 1.0 MHz) MMBT3906WT1, SMMBT3906WT1
C
ibo
−
−
8.0
10.0
pF
Input Impedance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz) MMBT3906WT1, SMMBT3906WT1
h
ie
1.0
2.0
10
12
k W
Voltage Feedback Ratio
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz) MMBT3906WT1, SMMBT3906WT1
h
re
0.5
0.1
8.0
10
X 10
−4
Small−Signal Current Gain
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz) MMBT3906WT1, SMMBT3906WT1
h
fe
100
100
400
400
−
Output Admittance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz) MMBT3906WT1, SMMBT3906WT1
h
oe
1.0
3.0
40
60
mmhos
Noise Figure
(V
CE
= 5.0 Vdc, I
C
= 100 mAdc, R
S
= 1.0 k W, f = 1.0 kHz)
MMBT3904WT1, SMMBT3904WT1
(V
CE
= −5.0 Vdc, I
C
= −100 mAdc, R
S
= 1.0 k W, f = 1.0 kHz)
MMBT3906WT1, SMMBT3906WT1
NF
−
−
5.0
4.0
dB
SWITCHING CHARACTERISTICS
Characteristic
Condition Symbol Min Max Unit
Delay Time
(V
CC
= 3.0 Vdc, V
BE
= −0.5 Vdc)
MMBT3904WT1, SMMBT3904WT1
(V
CC
= −3.0 Vdc, V
BE
= 0.5 Vdc)
MMBT3906WT1, SMMBT3906WT1
t
d
−
−
35
35
ns
Rise Time
(I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
MMBT3904WT1, SMMBT3904WT1
(I
C
= −10 mAdc, I
B1
= −1.0 mAdc)
MMBT3906WT1, SMMBT3906WT1
t
r
−
−
35
35
Storage Time
(V
CC
= 3.0 Vdc, I
C
= 10 mAdc)
MMBT3904WT1, SMMBT3904WT1
(V
CC
= −3.0 Vdc, I
C
= −10 mAdc)
MMBT3906WT1, SMMBT3906WT1
t
s
−
−
200
225
ns
Fall Time
(I
B1
= I
B2
= 1.0 mAdc) MMBT3904WT1, SMMBT3904WT1
(I
B1
= I
B2
= −1.0 mAdc) MMBT3906WT1, SMMBT3906WT1
t
f
−
−
50
75
P1-P3P4-P6P7-P9P10-P12P13-P13

MMBT3906WT1G

Mfr. #:
Buy MMBT3906WT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 200mA 40V PNP
Lifecycle:
New from this manufacturer.
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