MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
www.onsemi.com
7
MMBT3904WT1, SMMBT3904WT1
Figure 14. Collector Saturation Region
I
B
, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
0
1.00.7 5.0 7.0
CE
I
C
= 1.0 mA
T
J
= 25°C
0.070.050.030.020.01
10 mA 30 mA 100 mA
MMBT3904WT1
Figure 15. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 16. Base Emitter Saturation Voltage vs.
Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
10.10.010.001
0
0.1
0.3
0.4
0.5
0.7
0.8
0.9
10.10.010.0010.0001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Figure 17. Base Emitter Voltage vs. Collector
Current
I
C
, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
0.2
0.6
I
C
/I
B
= 10
150°C
−55°C
25°C
I
C
/I
B
= 10
150°C
−55°C
25°C
150°C
−55°C
25°C
V
CE
= 1 V
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
www.onsemi.com
8
MMBT3904WT1, SMMBT3904WT1
Figure 18. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
-0.5
0
0.5
1.0
0 60 80 120 140 160
180
20 40
100
COEFFICIENT (mV/ C)
200
-1.0
-1.5
-2.0
°
+25°C TO +125°C
-55°C TO +25°C
+25°C TO +125°C
-55°C TO +25°C
q
VC
FOR V
CE(sat)
q
VB
FOR V
BE(sat)
MMBT3904WT1
Figure 19. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20
30 40
0.2 0.3 0.5 0.7
C
ibo
C
obo
T
J
= 25°C
T
J
= 125°C
MMBT3904WT1
Figure 20. Current Gain Bandwidth Product
vs. Collector Current
Figure 21. Safe Operating Area
I
C
, COLLECTOR CURRENT (mA) V
CE
, COLLECTOR EMITTER VOLTAGE (V)
10001001010.1
10
100
1000
1001010.1
0.001
0.01
0.1
1
f
T
, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
I
C
, COLLECTOR CURRENT (A)
V
CE
= 1 V
T
A
= 25°C
1 mS
Thermal Limit
1 S
100 mS 10 mS
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
www.onsemi.com
9
MMBT3906WT1, SMMBT3906WT1
Figure 22. Delay and Rise Time
Equivalent Test Circuit
Figure 23. Storage and Fall Time
Equivalent Test Circuit
3 V
275
10 k
1N916
C
S
< 4 pF*
3 V
275
10 k
C
S
< 4 pF*
< 1 ns
+10.6 V
300 ns
DUTY CYCLE = 2%
< 1 ns
+9.1 V
10.9 V
DUTY CYCLE = 2%
t
1
0
10 < t
1
< 500 ms
* Total shunt capacitance of test jig and connectors
TYPICAL TRANSIENT CHARACTERISTICS
T
J
= 25°C
T
J
= 125°C
Figure 24. TurnOn Time
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
TIME (ns)
1.0 2.0 3.0 10 20
70
5
100
5.0 7.0 30 50
200
10
30
7
20
I
C
/I
B
= 10
t
r
@ V
CC
= 3.0 V
t
d
@ V
OB
= 0 V
40 V
15 V
2.0 V
MMBT3906WT1
Figure 25. Fall Time
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
1.0 2.0 3.0 10 20
70
5
100
5.0 7.0 30 50
200
10
30
7
20
t , FALL TIME (ns)
f
V
CC
= 40 V
I
B1
= I
B2
I
C
/I
B
= 20
I
C
/I
B
= 10
MMBT3906WT1
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= −5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
f = 1.0 kHz
I
C
= 1.0 mA
I
C
= 0.5 mA
I
C
= 50 mA
I
C
= 100 mA
SOURCE RESISTANCE = 200 W
I
C
= 1.0 mA
SOURCE RESISTANCE = 200 W
I
C
= 0.5 mA
SOURCE RESISTANCE = 2.0 k
I
C
= 100 mA
SOURCE RESISTANCE = 2.0 k
I
C
= 50 mA
Figure 26.
f, FREQUENCY (kHz)
1.0
2.0
3.0
4.0
5.0
0.1
Figure 27.
R
S
, SOURCE RESISTANCE (kW)
0
NF, NOISE FIGURE (dB)
1.0 2.0 4.0 10 20
40
0.2 0.4
0
100
4.0
6.0
8.0
10
2.0
12
0.1 1.0 2.0 4.0 10 20
40
0.2 0.4
100
NF, NOISE FIGURE (dB)
MMBT3906WT1
MMBT3906WT1

MMBT3906WT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 200mA 40V PNP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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