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MMBT3906WT1G

P1-P3P4-P6P7-P9P10-P12P13-P13
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
www.onsemi.com
4
MMBT3904WT1, SMMBT3904WT1
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
+3 V
275
10 k
1N916
C
S
< 4 pF*
+3 V
275
10 k
C
S
< 4 pF*
< 1 ns
-0.5 V
+10.9 V
300 ns
DUTY CYCLE = 2%
< 1 ns
-9.1 V
+10.9 V
DUTY CYCLE = 2%
t
1
0
10 < t
1
< 500 ms
* Total shunt capacitance of test jig and connectors
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
www.onsemi.com
5
MMBT3904WT1, SMMBT3904WT1
TYPICAL TRANSIENT CHARACTERISTICS
Figure 3. Turn−On Time
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
Figure 4. Rise Time
I
C
, COLLECTOR CURRENT (mA)
TIME (ns)
1.0 2.0 3.0 10 20
70
5
100
t , RISE TIME (ns)
Figure 5. Storage Time
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Fall Time
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0
30 50
200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20
70
5
100
5.0 7.0
30 50
200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20
70
5
100
5.0 7.0
30 50
200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20
70
5
100
5.0 7.0
30 50
200
10
30
7
20
r
t , FALL TIME (ns)
f
t , STORAGE TIME (ns)
s
′
V
CC
= 40 V
I
C
/I
B
= 10
V
CC
= 40 V
I
B1
= I
B2
I
C
/I
B
= 20
I
C
/I
B
= 10
I
C
/I
B
= 10
t
r
@ V
CC
= 3.0 V
t
d
@ V
OB
= 0 V
40 V
15 V
2.0 V
I
C
/I
B
= 10
I
C
/I
B
= 20
I
C
/I
B
= 10
I
C
/I
B
= 20
t′
s
= t
s
-
1
/
8
t
f
I
B1
= I
B2
MMBT3904WT1
MMBT3904WT1
MMBT3904WT1 MMBT3904WT1
T
J
= 25°C
T
J
= 125°C
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(V
CE
= 5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
Figure 7. Noise Figure
f, FREQUENCY (kHz)
4
6
8
10
12
2
0.1
Figure 8. Noise Figure
R
S
, SOURCE RESISTANCE (k OHMS)
0
NF, NOISE FIGURE (dB)
1.0 2.0 4.0 10 20
40
0.2 0.4
0
100
4
6
8
10
12
2
14
0.1 1.0 2.0 4.0 10 20
40
0.2 0.4
100
NF, NOISE FIGURE (dB)
f = 1.0 kHz
I
C
= 1.0 mA
I
C
= 0.5 mA
I
C
= 50 mA
I
C
= 100 mA
SOURCE RESISTANCE = 200 W
I
C
= 1.0 mA
SOURCE RESISTANCE = 200 W
I
C
= 0.5 mA
SOURCE RESISTANCE = 500 W
I
C
= 100 mA
SOURCE RESISTANCE = 1.0 k
I
C
= 50 mA
MMBT3904WT1 MMBT3904WT1
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
www.onsemi.com
6
MMBT3904WT1, SMMBT3904WT1
h PARAMETERS
(V
CE
= 10 Vdc, f = 1.0 kHz, T
A
= 25°C)
Figure 9. Current Gain
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 10. Output Admittance
I
C
, COLLECTOR CURRENT (mA)
h , CURRENT GAIN
h , OUTPUT ADMITTANCE ( mhos)
Figure 11. Input Impedance
I
C
, COLLECTOR CURRENT (mA)
Figure 12. Voltage Feedback Ratio
I
C
, COLLECTOR CURRENT (mA)
30
100
50
5
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0
5.0
0.5
10
0.3 0.5 3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
h , INPUT IMPEDANCE (k OHMS)
ie
0.1 0.2 1.0 2.0
5.0 10
0.3 0.5 3.0
0.1 0.2 1.0 2.0
5.0 10
0.3 0.5 3.0
2
1
0.1 0.2 1.0 2.0
5.0 10
0.3 0.5 3.0
fe
m
-4
MMBT3904WT1
MMBT3904WT1
MMBT3904WT1 MMBT3904WT1
TYPICAL STATIC CHARACTERISTICS
Figure 13. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
100
1000
10
1.0
T
J
= 150°C
25°C
-55°C
h
FE
, DC CURRENT GAIN
10 100 1000
V
CE
= 1 V
MMBT3904WT1
P1-P3P4-P6P7-P9P10-P12P13-P13

MMBT3906WT1G

Mfr. #:
Buy MMBT3906WT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 200mA 40V PNP
Lifecycle:
New from this manufacturer.
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