NX3L2267 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 18 June 2012 13 of 22
NXP Semiconductors
NX3L2267
Low-ohmic dual single-pole double-throw analog switch
12.2 Additional dynamic characteristics
[1] f
i
is biased at 0.5V
CC
.
Table 12. Additional dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); V
I
= GND or V
CC
(unless otherwise
specified); t
r
= t
f

2.5 ns.
Symbol Parameter Conditions T
amb
= 25 C Unit
Min Typ Max
THD total harmonic
distortion
f
i
=20Hzto20 kHz; R
L
=32; see Figure 18
[1]
V
CC
=1.4V; V
I
= 1 V (p-p) - 0.15 - %
V
CC
=1.65V; V
I
= 1.2 V (p-p) - 0.10 - %
V
CC
=2.3V; V
I
= 1.5 V (p-p) - 0.02 - %
V
CC
=2.7V; V
I
= 2 V (p-p) - 0.02 - %
V
CC
=4.3V; V
I
= 2 V (p-p) - 0.02 - %
V
CC
=3.0V; V
I
= 1 V (p-p); R
L
= 600 -0.01- %
f
(3dB)
3 dB frequency
response
R
L
=50; see Figure 19
[1]
port nYn; V
CC
= 1.4 V to 4.3 V - 60 - MHz
iso
isolation (OFF-state) f
i
= 100 kHz; R
L
=50; see Figure 20
[1]
V
CC
= 1.4 V to 4.3 V - 90 - dB
V
ct
crosstalk voltage between digital inputs and switch;
f
i
= 1 MHz; C
L
= 50 pF; R
L
=50; see Figure 21
V
CC
= 1.4 V to 3.6 V - 0.21 - V
V
CC
= 3.6 V to 4.3 V - 0.30 - V
Xtalk crosstalk between switches;
f
i
= 100 kHz; R
L
=50;seeFigure 22
[1]
V
CC
= 1.4 V to 4.3 V - 90 - dB
Q
inj
charge injection f
i
= 1 MHz; C
L
= 0.1 nF; R
L
=1 M; V
gen
=0V;
R
gen
=0; see Figure 23
V
CC
= 1.5 V - 4 - pC
V
CC
= 1.8 V - 6 - pC
V
CC
=2.5V - 16 - pC
V
CC
=3.3V - 24 - pC
V
CC
=4.3V - 37 - pC
NX3L2267 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 18 June 2012 14 of 22
NXP Semiconductors
NX3L2267
Low-ohmic dual single-pole double-throw analog switch
12.3 Test circuits
Fig 18. Test circuit for measuring total harmonic distortion
012aaa006
f
i
R
L
switch nS
1V
IL
2V
IH
switch
V
CC
V
IL
or V
IH
0.5V
CC
nY0
nY1
1
2
nS
nZ
GND
D
Adjust f
i
voltage to obtain 0 dBm level at output. Increase f
i
frequency until dB meter reads 3dB.
Fig 19. Test circuit for measuring the frequency response when channel is in ON-state
012aaa007
f
i
R
L
switch nS
1V
IL
2V
IH
switch
V
CC
V
IL
or V
IH
0.5V
CC
nY0
nY1
1
2
nS
nZ
GND
dB
Adjust f
i
voltage to obtain 0 dBm level at input.
Fig 20. Test circuit for measuring isolation (OFF-state)
012aaa008
f
i
R
L
R
L
switch nS
1V
IH
2V
IL
switch
V
CC
V
IL
or V
IH
0.5V
CC
0.5V
CC
nY0
nY1
1
2
nS
nZ
GND
dB
NX3L2267 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 18 June 2012 15 of 22
NXP Semiconductors
NX3L2267
Low-ohmic dual single-pole double-throw analog switch
a. Test circuit
b. Input and output pulse definitions
Fig 21. Test circuit for measuring crosstalk voltage between digital inputs and switch
V
012aaa009
R
L
switch
1
2V
IH
V
IL
nS
nS
nZ
nY0
nY1
V
CC
V
I
V
O
logic
input
0.5V
CC
R
L
C
L
0.5V
CC
switch
1
2
G
V
ct
onoff
logic
input (nS)
off
V
O
012aaa010
20 log
10
(V
O2
/ V
O1
) or 20 log
10
(V
O1
/ V
O2
).
Fig 22. Test circuit for measuring crosstalk between switches
V
001aaj088
CHANNEL
OFF
V
IL
2S
2Y0 or 2Z 2Z or 2Y0
0.5V
CC
R
i
50
V
O2
R
L
V
CHANNEL
ON
V
IH
1S
1Y0 or 1Z 1Z or 1Y0
0.5V
CC
50
f
i
V
O1
R
L

NX3L2267GU,115

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
Analog Switch ICs 4.3 V 3 mA 4.1 Ohms
Lifecycle:
New from this manufacturer.
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