NX3L2267 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 18 June 2012 4 of 22
NXP Semiconductors
NX3L2267
Low-ohmic dual single-pole double-throw analog switch
8. Functional description
[1] H = HIGH voltage level; L = LOW voltage level.
9. Limiting values
[1] The minimum input voltage rating may be exceeded if the input current rating is observed.
[2] The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed but may not
exceed 4.6 V.
[3] For XQFN10 (SOT1049-3) package: above 132 C the value of P
tot
derates linearly with 14.1 mW/K.
[4] For XQFN10 (SOT1160-1) package: above 128 C the value of P
tot
derates linearly with 11.5 mW/K.
10. Recommended operating conditions
[1] To avoid sinking GND current from terminal nZ when switch current flows in terminal nYn, the voltage drop across the bidirectional
switch must not exceed 0.4 V. If the switch current flows into terminal nZ, no GND current will flow from terminal nYn. In this case, there
is no limit for the voltage drop across the switch.
[2] Applies to select input nS signal levels.
Table 4. Function table
[1]
Input nS Channel on
LnY0 = nZ
HnY1 = nZ
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 0.5 +4.6 V
V
I
input voltage select input nS
[1]
0.5 +4.6 V
V
SW
switch voltage
[2]
0.5 V
CC
+ 0.5 V
I
IK
input clamping current V
I
< 0.5 V 50 - mA
I
SK
switch clamping current V
I
< 0.5 V or V
I
>V
CC
+ 0.5 V - 50 mA
I
SW
switch current V
SW
> 0.5 V or V
SW
< V
CC
+ 0.5 V;
source or sink current
- 350 mA
V
SW
> 0.5 V or V
SW
< V
CC
+ 0.5 V;
pulsed at 1 ms duration, < 10 % duty cycle;
peak current
- 500 mA
T
stg
storage temperature 65 +150 C
P
tot
total power dissipation T
amb
= 40 Cto+125C
[3][4]
-250mW
Table 6. Recommended operating conditions
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 1.4 4.3 V
V
I
input voltage select input nS 0 4.3 V
V
SW
switch voltage switch input nY0 or nY1
[1]
0V
CC
V
T
amb
ambient temperature 40 +125 C
t/V input transition rise and fall rate V
CC
= 1.4 V to 4.3 V
[2]
- 200 ns/V
NX3L2267 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 18 June 2012 5 of 22
NXP Semiconductors
NX3L2267
Low-ohmic dual single-pole double-throw analog switch
11. Static characteristics
Table 7. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
Symbol Parameter Conditions T
amb
= 25 C T
amb
= 40 C to +125 C Unit
Min Typ Max Min Max
(85 C)
Max
(125 C)
V
IH
HIGH-level
input voltage
V
CC
= 1.4 V to 1.6 V 0.9 - - 0.9 - - V
V
CC
= 1.65 V to 1.95 V 0.9 - - 0.9 - - V
V
CC
= 2.3 V to 2.7 V 1.1 - - 1.1 - - V
V
CC
= 2.7 V to 3.6 V 1.3 - - 1.3 - - V
V
CC
= 3.6 V to 4.3 V 1.4 - - 1.4 - - V
V
IL
LOW-level
input voltage
V
CC
= 1.4 V to 1.6 V - - 0.3 - 0.3 0.3 V
V
CC
= 1.65 V to 1.95 V - - 0.4 - 0.4 0.3 V
V
CC
= 2.3 V to 2.7 V - - 0.5 - 0.5 0.4 V
V
CC
= 2.7 V to 3.6 V - - 0.5 - 0.5 0.5 V
V
CC
= 3.6 V to 4.3 V - - 0.6 - 0.6 0.6 V
I
I
input leakage
current
select input nS;
V
I
=GNDto4.3V;
V
CC
= 1.4 V to 4.3 V
--- -0.5 1 A
I
S(OFF)
OFF-state
leakage
current
nYn port; see Figure 5
V
CC
= 1.4 V to 3.6 V - - 5-10 100 nA
V
CC
= 3.6 V to 4.3 V - - 10 - 50 200 nA
I
S(ON)
ON-state
leakage
current
nZ port; see Figure 6
V
CC
= 1.4 V to 3.6 V - - 5-20 200 nA
V
CC
= 3.6 V to 4.3 V - - 10 - 50 400 nA
I
CC
supply current V
I
=V
CC
or GND;
V
SW
=GNDorV
CC
V
CC
= 3.6 V - - 100 - 300 3000 nA
V
CC
= 4.3 V - - 150 - 500 5000 nA
I
CC
additional
supply current
V
SW
=GNDorV
CC
V
I
= 2.6 V; V
CC
=4.3V - 2.0 4.0 - 7 7 A
V
I
= 2.6 V; V
CC
= 3.6 V - 0.35 0.7 - 1 1 A
V
I
= 1.8 V; V
CC
= 4.3 V - 7.0 10.0 - 15 15 A
V
I
= 1.8 V; V
CC
=3.6V - 2.5 4.0 - 5 5 A
V
I
= 1.8 V; V
CC
= 2.5 V - 50 200 - 300 500 nA
C
I
input
capacitance
-1.0----pF
C
S(OFF)
OFF-state
capacitance
port nYn - 35 - - - - pF
C
S(ON)
ON-state
capacitance
port nYn - 135 - - - - pF
NX3L2267 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 5 — 18 June 2012 6 of 22
NXP Semiconductors
NX3L2267
Low-ohmic dual single-pole double-throw analog switch
11.1 Test circuits
V
I
=0.3VorV
CC
0.3 V; V
O
=V
CC
0.3 V or 0.3 V.
Fig 5. Test circuit for measuring OFF-state leakage current
I
S
012aaa000
nS
nZ
nY0
nY1
V
CC
GND
switch
switch
1
1
2
2
V
IL
V
IH
nS
V
IL
or V
IH
V
I
V
O
V
I
=0.3VorV
CC
0.3 V; V
O
=V
CC
0.3 V or 0.3 V.
Fig 6. Test circuit for measuring ON-state leakage current
I
S
012aaa001
nS
nZ
nY0
nY1
V
CC
GND
switch
switch
1
1
2
2
V
IL
V
IH
nS
V
O
V
IL
or V
IH
V
I

NX3L2267GU,115

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
Analog Switch ICs 4.3 V 3 mA 4.1 Ohms
Lifecycle:
New from this manufacturer.
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