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BT139B-600E,118

P1-P3P4-P6P7-P9P10-P12P13-P15
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
D
2
P
A
K
BT139B-600E
4Q Triac
27 September 2013 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Planar passivated sensitive gate four quadrant triac in a SOT404 (D2PAK) surface-
mountable plastic package intended for use in general purpose bidirectional switching
and phase control applications. This sensitive gate "series E" triac is intended to be
interfaced directly to microcontrollers, logic integrated circuits and other low power gate
trigger circuits.
2. Features and benefits
•
Direct triggering from low power drivers and logic ICs
•
High blocking voltage capability
•
Planar passivated for voltage ruggedness and reliability
•
Sensitive gate
•
Surface-mountable package
•
Triggering in all four quadrants
3. Applications
•
General purpose phase control
•
General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 600 V
I
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- - 155 A
I
T(RMS)
RMS on-state current full sine wave; T
mb
≤ 99 °C; Fig. 1;
Fig. 2; Fig. 3
- - 16 A
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
- 2.5 10 mAI
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
- 4 10 mA
NXP Semiconductors
BT139B-600E
4Q Triac
BT139B-600E All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 27 September 2013 2 / 14
Symbol Parameter Conditions Min Typ Max Unit
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
- 5 10 mA
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C; Fig. 7
- 11 25 mA
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb T2 mounting base; main
terminal 2
mb
1 3
2
D2PAK (SOT404)
sym051
T1
G
T2
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT139B-600E D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
SOT404
P1-P3P4-P6P7-P9P10-P12P13-P15

BT139B-600E,118

Mfr. #:
Buy BT139B-600E,118
Manufacturer:
WeEn Semiconductors
Description:
Triacs TAPE13 TRIAC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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