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BT139B-600E,118
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
NXP Semiconductors
BT139B-600E
4Q T
riac
BT139B-600E
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
27 September 2013
6 / 14
8.
Thermal characteristics
T
able 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
half cycle;
Fig. 6
-
-
1.7
K/W
R
th(j-mb)
thermal resistance
from junction to
mounting base
full cycle;
Fig. 6
-
-
1.2
K/W
R
th(j-a)
thermal resistance
from junction to
ambient
minimum footprint; FR4 board
-
55
-
K/W
001aab098
10
-
1
10
-
2
1
10
Z
th(j-mb)
(K/W)
10
-
3
t
p
(s)
10
-
5
1
10
10
-
1
10
- 2
10
-
4
10
- 3
t
p
P
D
t
(2)
(1)
(1) Unidirectional (half cycle)
(2) Bidirectional (full cycle)
Fig. 6.
T
ransient thermal impedance from junction to mounting base as a function of pulse width
NXP Semiconductors
BT139B-600E
4Q T
riac
BT139B-600E
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
27 September 2013
7 / 14
9.
Characteristics
T
able 6.
Characteristics
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
-
2.5
10
mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
-
4
10
mA
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
-
5
10
mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
-
1
1
25
mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 8
-
3.2
30
mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 8
-
16
40
mA
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 8
-
4
30
mA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 8
-
5.5
40
mA
I
H
holding current
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
-
4
45
mA
V
T
on-state voltage
I
T
= 20 A; T
j
= 25 °C;
Fig. 10
-
1.2
1.6
V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 1
1
-
0.7
1
V
V
GT
gate trigger voltage
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 1
1
0.25
0.4
-
V
I
D
off-state current
V
D
= 600 V; T
j
= 125 °C
-
0.1
0.5
mA
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
-
50
-
V/µs
t
gt
gate-controlled turn-on
time
I
TM
= 20 A; V
D
= 600 V; I
G
= 0.1 A; dI
G
/
dt = 5 A/µs
-
2
-
µs
NXP Semiconductors
BT139B-600E
4Q T
riac
BT139B-600E
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
27 September 2013
8 / 14
T
j
(°C)
-
50
150
100
0
50
001aab448
1
2
3
I
GT
(
Tj
)
I
GT(25
°
C)
0
(1)
(2)
(3)
(4)
(1) T2- G+
(2) T2+ G-
(3) T2- G-
(4) T2+ G+
Fig. 7.
Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
-
5
0
150
100
0
50
001aab100
1
2
3
0
I
L
I
L(25°C)
Fig. 8.
Normalized latching current as a function of
junction temperature
T
j
(°C)
-
5
0
150
100
0
50
001aab099
1
2
3
0
I
H
I
H(25°C)
Fig. 9.
Normalized holding current as a function of
junction temperature
001aab094
V
T
(V)
0
3
2
1
20
30
10
40
50
I
T
(A)
0
(1)
(3)
(2)
V
o
= 1.195 V; R
s
= 0.018 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 10.
On-state current as a function of on-state
voltage
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
BT139B-600E,118
Mfr. #:
Buy BT139B-600E,118
Manufacturer:
WeEn Semiconductors
Description:
Triacs TAPE13 TRIAC
Lifecycle:
New from this manufacturer.
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