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BT139B-600E,118
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
NXP Semiconductors
BT139B-600E
4Q T
riac
BT139B-600E
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
27 September 2013
3 / 14
7.
Limiting values
T
able 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
V
DRM
repetitive peak off-state voltage
-
600
V
I
T(RMS)
RMS on-state current
full sine wave; T
mb
≤ 99 °C;
Fig. 1
;
Fig. 2
;
Fig. 3
-
16
A
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4
;
Fig. 5
-
155
A
I
TSM
non-repetitive peak on-state
current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
-
170
A
I
2
t
I2t for fusing
t
p
= 10 ms; SIN
-
120
A
2
s
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G+
-
50
A/µs
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G-
-
50
A/µs
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G-
-
50
A/µs
dI
T
/dt
rate of rise of on-state current
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G+
-
10
A/µs
I
GM
peak gate current
-
2
A
P
GM
peak gate power
-
5
W
P
G(A
V)
average gate power
over any 20 ms period
-
0.5
W
T
stg
storage temperature
-40
150
°C
T
j
junction temperature
-
125
°C
NXP Semiconductors
BT139B-600E
4Q T
riac
BT139B-600E
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
27 September 2013
4 / 14
surge duration (s)
10
-
2
10
1
10
-
1
001aab090
20
30
10
40
50
I
T(RMS)
(A)
0
f = 50 Hz; T
mb
= 99 °C
Fig. 1.
RMS on-state current as a function of surge
duration; maximum values
T
mb
(°C)
-
5
0
150
100
0
50
001aab091
10
5
15
20
I
T(RMS)
(A)
0
(1)
(1) T
mb
= 99 °C
Fig. 2.
RMS on-state current as a function of mounting
base temperature; maximum values
I
T(RMS)
(A)
0
20
15
10
5
001aab093
5
15
25
P
tot
(W)
0
113
101
95
T
mb(max)
(°C)
125
30
10
20
107
119
α
=
180
60
90
120
α
α
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(A
V)
Fig. 3.
T
otal power dissipation as a function of RMS on-state current; maximum values.
NXP Semiconductors
BT139B-600E
4Q T
riac
BT139B-600E
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
27 September 2013
5 / 14
001aab102
80
40
120
160
I
TSM
(A)
0
n
1
10
3
10
2
10
T
I
T
I
TSM
t
T
j(initial)
= 25 °C max
f = 50 Hz; n = number of cycles
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
001aab092
T (ms)
10
-
2
10
2
10
10
-
1
1
10
2
10
3
I
TSM
(A)
10
T
I
T
I
TSM
t
T
j(initial)
= 25 °C max
(2)
(1)
t
p
≤ 20 ms
(1) dI
T
/dt limit
(2) T2- G+ quadrant limit
Fig. 5.
Non-repetitive peak on-state current as a function of pulse width; maximum values
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
BT139B-600E,118
Mfr. #:
Buy BT139B-600E,118
Manufacturer:
WeEn Semiconductors
Description:
Triacs TAPE13 TRIAC
Lifecycle:
New from this manufacturer.
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