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16
CURRENT LIMIT AND CURRENT LIMIT SET
Overview
The NCP3012 uses the voltage drop across the High Side
MOSFET during the on time to sense inductor current. The
I
Limit
block consists of a voltage comparator circuit which
compares the differential voltage across the V
CC
Pin and the
V
SW
Pin with a resistor settable voltage reference. The sense
portion of the circuit is only active while the HS MOSFET
is turned ON.
CONTROL
Vset
6
RSet
Iset
13 uA
Itrip Ref63 Steps, 6.51 mV/step
DAC /
COUNTER
Ilim Out
HSDR
LSDR
VSW
VIN
VCC
Itrip Ref
VSense
Switch
Cap
Figure 27. I
set
/ I
Limit
Block Diagram
Current Limit Set
The I
Limit
comparator reference is set during the startup
sequence by forcing a typically 13 mA current through the
low side gate drive resistor. The gate drive output will rise
to a voltage level shown in the equation below:
V
set
+ I
set
*R
set
(eq. 4)
Where I
SET
is 13 mA and R
SET
is the gate to source resistor
on the low side MOSFET.
This resistor is normally installed to prevent MOSFET
leakage from causing unwanted turn on of the low side
MOSFET. In this case, the resistor is also used to set the
I
Limit
trip level reference through the I
Limit
DAC. The I
set
process takes approximately 350 ms to complete prior to
SoftStart stepping. The scaled voltage level across the I
SET
resistor is converted to a 6 bit digital value and stored as the
trip value. The binary I
Limit
value is scaled and converted to
the analog I
Limit
reference voltage through a DAC counter.
The DAC has 63 steps in 6.51 mV increments equating to a
maximum sense voltage of 403 mV. During the I
set
period
prior to SoftStart, the DAC counter increments the
reference on the I
SET
comparator until it crosses the V
SET
voltage and holds the DAC reference output to that count
value. This voltage is translated to the I
Limit
comparator
during the I
Sense
portion of the switching cycle through the
switch cap circuit. See Figure 27. Exceeding the maximum
sense voltage results in no current limit. Steps 0 to 10 result
in an effective current limit of 0 mV.
Current Sense Cycle
Figure 28 shows how the current is sampled as it relates
to the switching cycle. Current level 1 in Figure 28
represents a condition that will not cause a fault. Current
level 2 represents a condition that will cause a fault. The
sense circuit is allowed to operate below the 3/4 point of a
given switching cycle. A given switching cycle’s 3/4 T
on
time is defined by the prior cycle’s T
on
and is quantized in
10 ns steps. A fault occurs if the sensed MOSFET voltage
exceeds the DAC reference within the 3/4 time window of
the switching cycle.
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1/4 1/2
Ton1
1/4
3/4
Ton
¾
Ton2
¾
Ton1
No Trip:
Vsense <
I
trip
Ref at 3/4 Point
Trip:
Vsense >
I
trip
Ref at 3/4 Point
3/4
3/4 Point Determined by
Prior Cycle
Vsense
1/2
Current Level 2
Current Level 1
Itrip Ref
Figure 28. I
Limit
Trip Point Description
Each switching cycle’s Ton is counted in 10 nS time steps. The 3/4 sample time
value is held and used for the following cycle’s limit sample time
SoftStart Current limit
During softstart the I
SET
value is doubled to allow for
inrush current to charge the output capacitance. The DAC
reference is set back to its normal value after softstart has
completed.
V
SW
Ringing
The I
Limit
block can lose accuracy if there is excessive
V
SW
voltage ringing that extends beyond the 1/2 point of the
highside transistor ontime. Proper snubber design and
keeping the ratio of ripple current and load current in the
1030% range can help alleviate this as well.
Current Limit
A current limit trip results in completion of one switching
cycle and subsequently half of another cycle T
on
to account
for negative inductor current that might have caused
negative potentials on the output. Subsequently the power
MOSFETs are both turned off and a 4 softstart time period
wait passes before another softstart cycle is attempted.
I
ave
vs Trip Point
The average load trip current versus R
SET
value is shown
the equation below:
I
AveTRIP
+
I
set
R
set
R
DS(on)
*
1
4
ƪ
V
IN
* V
OUT
L
V
OUT
V
IN
1
F
SW
ƫ
(eq. 5)
Where:
L = Inductance (H)
I
SET
= 13 mA
R
SET
= Gate to Source Resistance (W)
R
DS(on)
= On Resistance of the HS MOSFET (W)
V
IN
= Input Voltage (V)
V
OUT
= Output Voltage (V)
F
SW
= Switching Frequency (Hz)
Boost Clamp Functionality
The boost circuit requires an external capacitor connected
between the BST and V
SW
pins to store charge for supplying
the high and lowside gate driver voltage. This clamp circuit
limits the driver voltage to typically 7.5 V when V
IN
> 9 V,
otherwise this internal regulator is in dropout and typically
V
IN
1.25 V.
The boost circuit regulates the gate driver output voltage
and acts as a switching diode. A simplified diagram of the
boost circuit is shown in Figure 29. While the switch node
is grounded, the sampling circuit samples the voltage at the
boost pin, and regulates the boost capacitor voltage. The
sampling circuit stores the boost voltage while the V
SW
is
high and the linear regulator output transistor is reversed
biased.
VIN
8. 9 V
BST
VSW
LSDR
Figure 29. Boost Circuit
Switch
Sampling
Circuit
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Reduced sampling time occurs at high duty cycles where
the low side MOSFET is off for the majority of the switching
period. Reduced sampling time causes errors in the
regulated voltage on the boost pin. High duty cycle / input
voltage induced sampling errors can result in increased
boost ripple voltage or higher than desired DC boost voltage.
Figure 30 outlines all operating regions.
The recommended operating conditions are shown in
Region 1 (Green) where a 0.1 mF, 25 V ceramic capacitor
can be placed on the boost pin without causing damage to the
device or MOSFETS. Larger boost ripple voltage occurring
over several switching cycles is shown in Region 2 (Yellow).
The boost ripple frequency is dependent on the output
capacitance selected. The ripple voltage will not damage the
device or $12 V gate rated MOSFETs.
Conditions where maximum boost ripple voltage could
damage the device or $12 V gate rated MOSFETs can be
seen in Region 3 (Orange). Placing a boost capacitor that is
no greater than 10X the input capacitance of the high side
MOSFET on the boost pin limits the maximum boost
voltage < 12 V. The typical drive waveforms for Regions 1,
2 and 3 (green, yellow, and orange) regions of Figure 30 are
shown in Figure 31.
Region 1
5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90
2
11 . 5V
Region 2
22V
Region 3
4
6
8
10
12
14
16
18
20
22
24
26
28
Duty Cycle
Input Voltage
Normal Operation Increased Boost Ripple
(Still in Specification)
Increased Boost Ripple
Capacitor Optimization
Required
71%
Maxi
mum
Duty
Cycle
Boost Voltage Levels
Max
Duty
Cycle
Figure 30. Safe Operating Area for Boost Voltage with a 0.1 mF Capacitor

NCV3012DTBR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Switching Controllers PWM CONTROLLER
Lifecycle:
New from this manufacturer.
Delivery:
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