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PHD71NQ03LT,118

P1-P3P4-P6P7-P9P10-P12P13-P14
PHD71NQ03LT_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 9 March 2010 6 of 13
NXP Semiconductors
PHD71NQ03LT
N-channel TrenchMOS logic level FET
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Gate-source threshold voltage as a function of
junction temperature
03ai77
0
20
40
60
80
0 0.2 0.4 0.6 0.8 1
V
DS
(V)
I
D
(A)
5.5 V6 V
T
j
= 25 °C
V
GS
= 3 V
10 V
3.5 V
4 V
4.5 V
5 V
7 V
03ai79
0
20
40
60
80
0246
V
GS
(V)
I
D
(A)
V
DS
> I
D
× R
DSon
T
j
= °C175 °C
03ai28
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0 0.8 1.6 2.4 3.2
V
GS
(V)
I
D
(A)
typ maxmin
03ai29
0
0.8
1.6
2.4
3.2
-60 0 60 120 180
T
j
(
°
C)
V
GS(th)
(V)
min
typ
max
PHD71NQ03LT_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 9 March 2010 7 of 13
NXP Semiconductors
PHD71NQ03LT
N-channel TrenchMOS logic level FET
Fig 9. Drain-source on-state resistance as a function
of drain current; typical values
Fig 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
0
5
10
15
20
020406080
I
D
(A)
R
DSon
(mΩ)
V
GS
= 4.5 V
T
j
= 25 °C
5.5 V
10 V
6 V
7 V
5 V
03ai78
03af18
0
0.5
1
1.5
2
-60 0 60 120 180
T
j
(
°
C)
a
0
2
4
6
8
10
0 5 10 15 20 25
Q
G
(nC)
V
GS
(V)
I
D
= 50 A
T
j
= 25 °C
V
DD
= 15 V
03ai82
03ai81
10
2
10
3
10
4
10
−1
1 10 10
2
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
PHD71NQ03LT_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 9 March 2010 8 of 13
NXP Semiconductors
PHD71NQ03LT
N-channel TrenchMOS logic level FET
Fig 13. Source current as a function of source-drain voltage; typical values
0
20
40
60
80
0 0.3 0.6 0.9 1.2
V
SD
(V)
I
S
(A)
T
j
= 25 °C
175 °C
V
GS
= 0 V
03ai80
P1-P3P4-P6P7-P9P10-P12P13-P14

PHD71NQ03LT,118

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Manufacturer:
Nexperia
Description:
MOSFET TAPE13 PWR-MOS
Lifecycle:
New from this manufacturer.
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