© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 1
1 Publication Order Number:
NLAS3899B/D
NLAS3899B
Dual DPDT Low R
ON
, Low
Capacitance Switch
The NLAS3899B is a dual DPDT analog switch designed for low
power audio and dual SIM card applications. The low R
ON
of 3.0
(typical) is ideal for routing audio signals to or from a moderately high
impedance load. In addition, the low C
ON
of 20 pF (typical) gives the
NLAS3899B a high bandwidth of 280 MHz, perfect for dual SIM card
applications.
Features
• Single Supply Operation
1.65 to 4.3 V V
CC
Function Directly from Li−Ion Battery
• Low ON Resistance (3.0 Typical Across V
CC
)
• Low C
ON
(20 pF Typical)
• Bandwidth 280 MHz
• Maximum Breakdown Voltage: 5.5 V
• Low Static Power
• Interfaces with 1.8 V Chipset
• These are Pb−Free Devices
Typical Applications
• Cell Phone Speaker/Microphone Switching
• Ringtone−Chip/Amplifier Switching
• Dual SIM Card Data Switching
• Four Unbalanced (Single−Ended) Switches
Important Information
• ESD Protection:
Human Body Model (HBM) 1000 V − All Pins
Human Body Model (HBM) 5000 V − I/O to GND
• Continuous Current Rating Through each Switch ±300 mA
• Conforms to: JEDEC MO−220, Issue H, Variation VEED−6
• Package:
♦ 1.8 x 2.6 x 0.75 mm WQFN16 Pb−Free
♦ 3.0 x 3.0 x 0.9 mm QFN16 Pb−Free
WQFN16
CASE 488AP
MARKING
DIAGRAMS
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
ORDERING INFORMATION
16
AAMG
G
1
http://onsemi.com
4
1
16 13
9
12
58
14
7
15
6
310
211
COMA NOA Vcc NCD
NCB GND NOCCOMC
NCC
C−D IN
NOD
COMD
COMB
NOB
A−B IN
NCA
1
QFN16
CASE 485AE
(Note: Microdot may be in either location)
1
16
NLAS
3899
ALYW
1
XX = Specific Device Code
A = Assembly Location
M = Date Code/Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
