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NLAS3899BMNTXG

P1-P3P4-P6P7-P9P10-P10
NLAS3899B
http://onsemi.com
4
DC Electrical Characteristics
Typical: T = 25°C; V
CC
= 3.0 V
CONTROL INPUT (Typical: T = 25°C; V
CC
= 3.0 V)
Symbol Pins Parameter Test Conditions
V
CC
(V)
−405C to +855C
Unit
Min Typ Max
V
IH
A−B IN,
C−D IN
Control Input High 3.0
4.3
1.3
1.6
V
V
IL
A−B IN,
C−D IN
Control Input Low 3.0
4.3
0.5
0.6
V
I
IN
A−B IN,
C−D IN
Control Input Leakage 0 v V
IN
v V
CC
4.3 ±0.1 ±1.0
A
SUPPLY CURRENT AND LEAKAGE (Typical: T = 25°C; V
CC
= 3.0 V)
Symbol Pins Parameter Test Conditions
V
CC
(V)
−405C to +855C
Unit
Min Typ Max
I
NO/NC
(OFF)
NCx, NOx OFF State Leakage V
IN
= V
IL
or V
IH
V
NC/NO
= 0.3 V
V
COM
= 4.0 V
4.3 ±10 ±300 nA
I
COM
(ON)
COMx ON State Leakage V
IN
= V
IL
or V
IH
V
NO
= 0.3 V or 4.0 V with
V
NC
floating or
V
NC
= 0.3 V or 4.0 V with
V
NO
floating
V
COM
= 0.3 V or 4.0 V
4.3 ±10 ±300 nA
I
CC
V
CC
Quiescent Supply V
IN
and V
IS
= V
CC
or GND
I
D
= 0 A
1.65 − 4.3 ±1.0 ±2.0
A
I
OFF
A−B IN,
C−D IN
Power Off Leakage V
IN
= 4.3 V or GND 0 ±0.5 ±2.0
A
ON RESISTANCE (Typical: T = 25°C; V
CC
= 3.0 V)
Symbol Pins Parameter Test Conditions
V
CC
(V)
−405C to +855C
Unit
Min Typ Max
R
ON
NOx, NCx
COMx
ON Resistance I
ON
= −100 mA
V
IS
= 0 to V
CC
2.5
3.0
3.6
4.3
3.0
2.6
2.5
2.2
4.0
3.0
3.0
2.5
R
FLAT
NOx, NCx
COMx
R
ON
Flatness I
ON
= −100 mA
V
IS
= 0 to V
CC
3.0
4.3
0.8
1.1
R
ON
NOx, NCx
COMx
R
ON
Matching I
ON
= −100 mA
V
IS
= 0 to V
CC
3.0
4.3
0.8
0.7
NLAS3899B
http://onsemi.com
5
AC ELECTRICAL CHARACTERISTICS
TIMING/FREQUENCY (Typical: T = 25°C; V
CC
= 3.0 V, R
L
= 50 , C
L
= 35 pF, f = 1 MHz)
Symbol Pins Parameter Test Conditions
V
CC
(V)
−405C to +855C
Unit
Min Typ Max
t
ON
IN to
NCx or NOx
Turn On Time 2.3 − 4.3 30 40 ns
t
OFF
IN to
NCx or NOx
Turn Off Time 2.3 − 4.53 20 30 ns
t
BBM
IN to
NCx or NOx
Break Before Make 3.0 2 15 ns
BW −3dB Bandwidth C
L
= 5 pF 1.65 − 4.3 280 MHz
ISOLATION AND THD (Typical: T = 25°C; V
CC
= 3.0 V, RL = 50 , CL = 5 pF, f = 1 MHz)
Symbol Pins Parameter Test Conditions
V
CC
(V)
−405C to +855C
Unit
Min Typ Max
Q Charge Injection V
IN
= V
CC
to GND
R
IS
= 0 , C
L
= 1.0 nF
Q = C
L
− ΔV
OUT
1.65 − 4.3 111 pC
THD Total Harmonic Dis-
tortion
F
IS
= 20 Hz to 20 kHz
R
L
= R
gen
= 600 ,
C
L
= 1.0 pF
V
IS
= 1.0 V
PP
3.0 0.007 %
V
ONL
Maximum Feed-
through On Loss
V
IN
= 0 dBm @ 100 kHz to 50 MHz
V
IN
centered between V
CC
& GND
1.65 − 4.3 −0.06 dB
O
IRR
NOx Off Isolation V
IN
= 0
V
NO
or V
NC
(pk−pk) = 1.0 V
1.65 − 4.3 −67 dB
Xtalk COMx to
COMy
Non−Adjacent Chan-
nel
V
NO
or V
NC
(pk−pk) = 1.0 V 1.65 − 4.3 −100 dB
CAPACITANCE (Typical: T = 25°C; V
CC
= 3.0 V, R
L
= 50 , C
L
= 5 pF, f = 1 MHz)
Symbol Pins Parameter Test Conditions
V
CC
(V)
−405C to +855C
Unit
Min Typ Max
C
IN
A−B IN, C−D
IN
Control Input 0 V 5.0 pF
C
ON
NCx to COMx Through Switch V
IN
= 0V 3.0 V 20 pF
C
OFF
NCx
NOx
Unselected Port V
IS
= 3.0V, V
IN
= 3.0V 3.0 V 10 pF
NLAS3899B
http://onsemi.com
6
Figure 2. I
CC
vs. V
in
Figure 3. (Expanded View) I
CC
vs. V
in
V
in
(V) V
in
(V)
3.53.02.52.01.51.00.50
−0.002
0
0.002
0.004
0.006
0.010
0.012
0.014
2.01.21.00.80.60.40.20
0
0.00010
0.00015
0.00020
0.00025
0.00030
0.00035
I
CC
(A)
I
CC
(A)
0.008
4.0
3.0 V @ 25°C
3.6 V @ 25°C
4.3 V @ 25°C
1.61.4 1.8
3.0 V @ 25°C
3.6 V @ 25°C
4.3 V @ 25°C
Figure 4. t
BBM
(Time Break−Before−Make)
Output
DUT
50
35 pF
V
CC
Switch Select Pin
90%
Output
Input
V
CC
GND
90% of V
OH
GND
Figure 5. t
ON
/t
OFF
50% 50%
90% 90%
t
ON
t
OFF
V
OH
Output
Input
V
CC
0 V
Figure 6. t
ON
/t
OFF
DUT
Open
35 pF
V
CC
Input
50% 50%
10%
t
ON
t
OFF
Output
Input
V
CC
0 V
10%
50
0.1 F
t
BMM
Output
V
OUT
V
OL
V
OUT
V
OH
V
OL
DUT
Open
V
CC
Input
Output
50
35 pF
V
OUT
0.1 F
P1-P3P4-P6P7-P9P10-P10

NLAS3899BMNTXG

Mfr. #:
Buy NLAS3899BMNTXG
Manufacturer:
ON Semiconductor
Description:
Analog Switch ICs DUAL LOW RON SWITCH DPDT
Lifecycle:
New from this manufacturer.
Delivery:
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