R1LP0108ESF-5SI#B1

R1LP0108E Series
R10DS0151EJ0100 Rev.1.00 Page 4 of 12
2013.6.21
Pin Description
Pin name Function
Vcc Power supply
Vss Ground
A0 to A16 Address input
DQ0 to DQ7 Data input/output
CS1# Chip select 1
CS2 Chip select 2
WE# Write enable
OE# Output enable
NC Non connection
Block Diagram
A
0
CS1#
A
1
WE#
OE#
A
16
DQ0
DQ1
DQ7
Vcc
Vss
COLUMN DECODER
DQ
BUFFER
ADDRESS
BUFFER
ROW
DECODER
SENSE / WRITE AMPLIFIER
CLOCK
GENERATOR
MEMORY ARRAY
128k-word x8-bit
CS2
R1LP0108E Series
R10DS0151EJ0100 Rev.1.00 Page 5 of 12
2013.6.21
Operation Table
CS1# CS2 WE# OE# DQ0~7 Operation
X L X X High-Z Stand-by
H X X X High-Z Stand-by
L H L X Din Write
L H H L Dout Read
L H H H High-Z Output disable
Note 1. H: V
IH
L:V
IL
X: V
IH
or V
IL
Absolute Maximum
Parameter Symbol Value unit
Power supply voltage relative to Vss Vcc -0.3 to +7 V
Terminal voltage on any pin relative to Vss V
T
-0.3
*1
to Vcc+0.3
*2
V
Power dissipation P
T
0.7 W
Operation temperature Topr
*3
R Ver. 0 to +70
°C
I Ver. -40 to +85
Storage temperature range Tstg -65 to 150 °C
Storage temperature range under bias Tbias
*3
R Ver. 0 to +70
°C
I Ver. -40 to +85
Note 1. –3.0V for pulse 30ns (full width at half maximum)
2. Maximum voltage is +7V.
3. Ambient temperature range depends on R/I-version. Please see table on page 1.
R1LP0108E Series
R10DS0151EJ0100 Rev.1.00 Page 6 of 12
2013.6.21
DC Operating Conditions
Parameter Symbol Min. Typ. Max. Unit Note
Supply voltage
Vcc 4.5 5.0 5.5 V
Vss 0 0 0 V
Input high voltage V
IH
2.2 - Vcc+0.3 V
Input low voltage V
IL
-0.3 - 0.8 V 1
Ambient temperature range
R Ver.
Ta
0 - +70 °C 2
I Ver. -40 - +85 °C 2
Note 1. –3.0V for pulse 30ns (full width at half maximum)
2. Ambient temperature range depends on R/I-version. Please see table on page 1.
DC Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Input leakage current | I
LI
| - - 1 A Vin = Vss to Vcc
Output leakage current
| I
LO
| - - 1 A
CS1# =V
IH
or CS2 =V
IL
or
OE# =V
IH
,
VI/O =Vss to Vcc
Average operating current
I
CC1
- 25 35 mA
Min. cycle, duty =100%, I
I/O = 0mA
CS1# =V
IL
, CS2 =V
IH
, Others = V
IH
/V
IL
I
CC2
- 2 5 mA
Cycle =1s, duty =100%, I
I/O = 0mA
CS1# 0.2V, CS2 Vcc-0.2V,
V
IH
Vcc-0.2V, V
IL
0.2V
Standby current
I
SB
- - 3 mA
“CS2 =V
IL
” or
“CS2 = V
IH
and CS1# =V
IH
”,
Others = Vss to Vcc
Standby current
I
SB1
- 0.6
*1
2 A ~+25°C
Vin = Vss to Vcc
(1) CS2 0.2 or
(2) CS1# Vcc-0.2V,
CS2 Vcc-0.2V
- - 3 A ~+40°C
- - 8 A ~+70°C
- - 10 A ~+85°C
Output high voltage
V
OH
2.4 - - V I
OH
= -1mA
V
OH2
Vcc
- 0.5
- - V I
OH
= -0.1mA
Output low voltage
V
OL
- - 0.4 V I
OL
= 2mA
Note 1. Typical parameter indicates the value for the center of distribution at 5.0V (Ta= 25ºC), and not 100% tested.
Capacitance
(Vcc = 4.5V ~ 5.5V, f = 1MHz, Ta = 0 ~ +70°C / -40 ~ +85°C
*2
)
Parameter Symbol Min. Typ. Max. Unit Test conditions Note
Input capacitance C in - - 8 pF Vin =0V 1
Input / output capacitance C
I/O
- - 10 pF VI/O =0V 1
Note 1. This parameter is sampled and not 100% tested.
2. Ambient temperature range depends on R/I-version. Please see table on page 1.

R1LP0108ESF-5SI#B1

Mfr. #:
Manufacturer:
Renesas Electronics
Description:
SRAM SRAM 1MB ADV. 5V TSOP32 55NS -40TO85C
Lifecycle:
New from this manufacturer.
Delivery:
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