R1LP0108ESF-5SI#B1

R1LP0108E Series
R10DS0151EJ0100 Rev.1.00 Page 7 of 12
2013.6.21
AC Characteristics
Test Conditions (Vcc = 4.5V ~ 5.5V, Ta = 0 ~ +70°C / -40 ~ +85°C
*1
)
Input pulse levels: VIL = 0.6V, VIH = 2.4V
Input rise and fall time: 5ns
Input and output timing reference level: 1.5V
Output load: See figures (Including scope and jig)
Note 1. Ambient temperature range depends on R/I-version. Please see table on page 1.
DQ
1.5V
R
L
= 500 ohm
C
L
= 30 pF ( -5SI, -5SR)
C
L
= 100 pF ( -7SI, -7SR)
R1LP0108E Series
R10DS0151EJ0100 Rev.1.00 Page 8 of 12
2013.6.21
Read Cycle
Parameter Symbol
R1LP0108E**-5** R1LP0108E**-7**
Unit Note
Min. Max. Min. Max.
Read cycle time t
RC
55 - 70 - ns
Address access time t
AA
- 55 - 70 ns
Chip select access time
t
ACS1
- 55 - 70 ns
t
ACS2
- 55 - 70 ns
Output enable to output valid t
OE
- 30 - 35 ns
Output hold from address change t
OH
5 - 10 - ns
Chip select to output in low-Z
t
CLZ1
5 - 10 - ns 2,3
t
CLZ2
5 - 10 - ns 2,3
Output enable to output in low-Z t
OLZ
5 - 5 - ns 2,3
Chip deselect to output in high-Z
t
CHZ1
0 20 0 25 ns 1,2,3
t
CHZ2
0 20 0 25 ns 1,2,3
Output disable to output in high-Z t
OHZ
0 20 0 25 ns 1,2,3
Write Cycle
Parameter Symbol
R1LP0108E**-5** R1LP0108E**-7**
Unit Note
Min. Max. Min. Max.
Write cycle time t
WC
55 - 70 - ns
Address valid to end of write t
AW
50 - 55 - ns
Chip select to end of write t
CW
50 - 55 - ns 5
Write pulse width t
WP
45 - 50 - ns 4
Address setup time t
AS
0 - 0 - ns 6
Write recovery time t
WR
0 - 0 - ns 7
Data to write time overlap t
DW
25 - 30 - ns
Data hold from write time t
DH
0 - 0 - ns
Output enable from end of write t
OW
5 - 5 - ns 2
Output disable to output in high-Z t
OHZ
0 20 0 25 ns 1,2
Write to output in high-Z t
WHZ
0 20 0 25 ns 1,2
Note 1. t
CHZ
, t
OHZ
and t
WHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not
referred to output voltage levels.
2. This parameter is sampled and not 100% tested.
3. At any given temperature and voltage condition, t
HZ
max is less than t
LZ
min both for a given device and from
device to device.
4. A write occurs during the overlap of a low CS1#, a high CS2, a low WE#.
A write begins at the latest transition among CS1# going low, CS2 going high and WE# going low.
A write ends at the earliest transition among CS1# going high, CS2 going low and WE# going high.
t
WP
is measured from the beginning of write to the end of write.
5. t
CW
is measured from the later of CS1# going low or CS2 going high to end of write.
6. t
AS
is measured the address valid to the beginning of write.
7. t
WR
is measured from the earliest of CS1# or WE# going high or CS2 going low to the end of write cycle.
8. Don’t apply inverted phase signal externally when DQ pin is output mode.
R1LP0108E Series
R10DS0151EJ0100 Rev.1.00 Page 9 of 12
2013.6.21
Timing Waveforms
Read Cycle
t
AA
CS1#
A
0~16
t
OH
t
CLZ1
t
ACS1
t
OE
t
OLZ
t
CHZ1
OE#
WE#
DQ
0~7
V
IH
t
OHZ
High impedance
WE# = “H” level
t
RC
Valid Data
CS2
t
CLZ2
t
ACS2
t
CHZ2

R1LP0108ESF-5SI#B1

Mfr. #:
Manufacturer:
Renesas Electronics
Description:
SRAM SRAM 1MB ADV. 5V TSOP32 55NS -40TO85C
Lifecycle:
New from this manufacturer.
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