19
Figure 15. Gain and Noise Figure vs. Frequency.
Input and output return loss are both greater that
10 dB. Although somewhat narrowband, the response
is adequate in the frequency range of 2110 MHz to
2170 MHz for the WCDMA downlink. If wider band
response is need, using a balanced conguration
improves return loss and doubles OIP3.
Figure 17. OIP3 vs. Frequency in WCDMA Band (Pout = 12 dBm).
FREQUENCY (GHz)
Figure 15. Gain and Noise Figure vs.
Frequency.
GAIN and NF (dB)
1.6
20
15
10
5
0
2.61.8 2.2 2.42.0
Gain
NF
FREQUENCY (GHz)
Figure 16. Input and Output Return Loss vs.
Frequency.
INPUT AND OUTPUT
RETURN LOSS (dB)
1.6
0
-5
-10
-15
2.61.8 2.2 2.42.0
S11
S22
FREQUENCY (MHz)
Figure 17. OIP3 vs. Frequency in WCDMA
Band (Pout = 12 dBm).
OIP3 (dBm)
2060
45
40
35
30
25
22002080 2120
2140
2100
2160 2180
Pout (dBm)
Figure 18. ACLR vs. Pout at 5 MHz Offset.
ACLR (dB)
-3
-30
-35
-40
-45
-50
-55
-60
-65
222 12 177
Figure 16. Input and Output Return Loss vs. Frequency.
Perhaps the most critical system level specication for
the ATF‑521P8 lies in its distortion‑less output power.
Typically, ampliers are characterized for linearity by
measuring OIP3. This is a two‑tone harmonic mea‑
surement using CW signals. But because WCDMA is
a modulated waveform spread across 3.84 MHz, it is
dicult to correlated good OIP3 to good ACLR. Thus,
both are measured and presented to avoid ambiguity.
Figure 18. ACLR vs. Pout at 5 MHz Oset.
Table 2. 2140 MHz Bill of Material.
C1=1.2 pF Phycomp 0402CG129C9B200
C2,C8=1.5 pF Phycomp 0402CG159C9B200
C3=4.7 pF Phycomp 0402CG479C9B200
C4,C6=.1 µF Phycomp 06032F104M8B200
C5=1 µF AVX 0805ZC105KATZA
C7=150 pF Phycomp 0402CG151J9B200
L1=1.0 nH TOKO LL1005‑FH1n0S
L2=12 nH TOKO LL1005‑FS12N
L3=39 nH TOKO LL1005‑FS39
L4=3.9 nH TOKO LL1005‑FH3N9S
R1=49.9Ω RohmRK73H1J49R9F
R2=383Ω Rohm RK73H1J3830F
R3=2.37Ω Rohm RK73H1J2R37F
R4=61.9Ω Rohm RK73H1J61R9F
R5=10Ω Rohm RK73H1J10R0F
R6=1.2Ω Rohm RK73H1J1R21F
Q1, Q2 Philips BCV62B
J1, J2 142‑0701‑851
20
Using the 3GPP standards document Release 1999
version 2002‑6, the following channel conguration
was used to test ACLR. This table contains the power
levels of the main channels used for Test Model 1.
Note that the DPCH can be made up of 16, 32, or 64
separate channels each at dierent power levels and
timing osets. For a listing of power levels, channeliza‑
tion codes and timing oset see the entire 3GPP TS
25.141 V3.10.0 (2002‑06) standards document at: http://
www.3gpp.org/specs/specs.htm
Table 3. ACLR Channel Power Conguration.
3GPP TS 25.141 V3.10.0 (2002-06) Type Pwr (dB)
P‑CCPCH+SCH ‑10
Primary CPICH ‑10
PICH ‑18
S‑CCPCH containing PCH (SF=256) ‑18
DPCH‑64ch (SF=128) ‑1.1
Thermal Design
When working with medium to high power FET
devices, thermal dissipation should be a large part
of the design. This is done to ensure that for a given
ambient temperature the transistors channel does not
exceed the maximum rating, T
CH
, on the data sheet.
For example, ATF‑521P8 has a maximum channel tem‑
perature of 150°C and a channel to board thermal
resistance of 45°C/W, thus the entire thermal design
hinges from these key data points. The question that
must be answered is whether this device can operate
in a typical environment with ambient temperature
uctuations from ‑25°C to 85°C. From Figure 19, a very
useful equation is derived to calculate the temperature
of the channel for a given ambient temperature. These
calculations are all incorporated into Avago Technolo‑
gies AppCAD.
where,
θ
b a
is the board to ambient thermal resistance;
θ
ch–b
is the channel to board thermal resistance.
The board to ambient thermal resistance thus becomes
very important for this is the designer’s major source
of heat control. To demonstrate the inuence of θ
b‑a,
thermal resistance is measured for two very dierent
scenarios using the ATF‑521P8 demoboard. The rst
case is done with just the demoboard by itself. The
second case is the ATF demoboard mounted on a
chassis or metal casing, and the results are given below:
Table 4. Thermal resistance measurements.
ATF Demoboard θ
b-a
PCB 1/8" Chassis 10.4°C/W
PCB no HeatSink 32.9°C/W
Therefore calculating the temperature of the channel
for these two scenarios gives a good indication of what
type of heat sinking is needed.
Case 1: Chassis Mounted @ 85°C
Tch = P x (θ
ch‑b
+ θ
b‑a
) + Ta
=.9W x (45+10.4)°C/W +85°C
Tch = 135°C
Case 2: No Heatsink @ 85°C
Tch = P x (θ
ch‑b
+ θ
b‑a
) + Ta
=.9W x (45+32.9)°C/W + 85°C
Tch = 155°C
In other words, if the board is mounted to a chassis, the
channel temperature is guaranteed to be 135°C safely
below the 150°C maximum. But on the other hand, if
no heat sinking is used and the θ
b‑a
is above 27°C/W
(32.9°C/W in this case), then the power must be derated
enough to lower the temperature below 150°C. This can
be better understood with Figure 20 below. Note power
is derated at 13 mW/°C for the board with no heat sink
and no derating is required for the chassis mounted
board until an ambient temperature of 100°C.
θ
ch-b
Tch
(channel)
Tb (board
or belly
of the part)
Ta
(
ambient
)
Ts (sink)
Pdiss = Vds x Ids
θ
b-s
θ
s-a
Figure 19. Equivalent Circuit for Thermal Resistance.
Hence very similar to Ohms Law, the temperature of the
channel is calculated with equation 8 below.
T
CH
= P
diss
(θ
ch–b
+ θ
bs
+ θ
s–a
) + T
amb
(8)
If no heat sink is used or heat sinking is incorporated
into the PCB board then equation 8 may be reduced to:
T
CH
= P
diss
(θ
ch–b
+ θ
ba
) + T
amb
(9)
Pdiss
(W)
0.9W
0 81 100 150 Tamb
(
°C
)
No Heatsink
(13 mW/°C)
Mounted on Chassis
(18 mW/°C)
Figure 20. Derating for ATF- 521P8.
21
2 x 2 LPCC (JEDEC DFP-N) Package Dimensions
Ordering Information
Part Number No. of Devices Container
ATF‑521P8‑TR1 3000 7” Reel
ATF‑521P8‑TR2 10000 13”Reel
ATF‑521P8‑BLK 100 antistatic bag
Device Models
Refer to Avago Technologies' Web Site:
www.avagotech.com
Thus, for reliable operation of ATF‑521P8 and extended
MTBF, it is recommended to use some form of thermal
heatsinking. This may include any or all of the following
suggestions:
Maximize vias underneath and around package;
Maximize exposed surface metal;
Use 1 oz or greater copper clad;
Minimize board thickness;
Metal heat sinks or extrusions;
Fans or forced air;
Mount PCB to Chassis.
Summary
A high linearity Tx driver amplier for WCDMA has been
presented and designed using Agilent’s ATF‑521P8. This
includes RF, DC and good thermal dissipation practices
for reliable lifetime operation. A summary of the typical
performance for ATF‑521P8 demoboard at 2140 MHz is
as follows:
Demo Board Results at 2140 MHz
Gain 16.5 dB
OIP3 41.2 dBm
ACLR ‑58 dBc
P1dB 24.8 dBm
NF 1.55 dB
References
[1] Ward, A. (2001) Avago Technologies ATF-54143 Low Noise
Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic
Package, 2001 [Internet], Available from:
<http://www.avagotech.com>
[2] Biasing Circuits and Considerations for GaAs MESFET
Power Ampliers, 2001 [Internet], Available from:
<http://www.rfsolutions.com/pdf/AN0002_ajp.pdf>
[Accessed 22 August, 2002]
D
E
8
7
6
5
A
D1
E1
P
e
pin1
R
L
b
DIMENSIONS ARE IN MILLIMETERS
DIMENSIONS
MIN.
0.70
0
0.225
1.9
0.65
1.9
1.45
NOM.
0.75
0.02
0.203 REF
0.25
2.0
0.80
2.0
1.6
0.50 BSC
MAX.
0.80
0.05
0.275
2.1
0.95
2.1
1.75
SYMBOL
A
A1
A2
b
D
D1
E
E1
e
1
pin1
2
3
4
2PX
Top View
End View
End View
Bottom View
A2
A
A1
0.2 0.25 0.3P
0.35 0.4 0.45L

ATF-521P8-TR1

Mfr. #:
Manufacturer:
Broadcom / Avago
Description:
RF JFET Transistors Transistor GaAs High Linearity
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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