4
Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions
The device’s optimum OIP3 and P1dB measurements were determined using a Maury load pull system at 4.5V, 200
mA quiesent bias:
Optimum OIP3
Freq Gamma Source Gamma Load OIP3 Gain P1dB PAE
(GHz) Mag Ang (deg) Mag Ang (deg) (dBm) (dB) (dBm) (%)
0.9 0.413 10.5 0.314 179.0 42.7 16.0 27.0 54.0
2 0.368 162.0 0.538 ‑176.0 42.5 15.8 27.5 55.3
2.4 0.318 169.0 0.566 ‑169.0 42.0 14.1 27.4 53.5
3.9 0.463 ‑134.0 0.495 ‑159.0 40.3 9.6 27.3 43.9
Optimum P1dB
Freq Gamma Source Gamma Load OIP3 Gain P1dB PAE
(GHz) Mag Ang (deg) Mag Ang (deg) (dBm) (dB) (dBm) (%)
0.9 0.587 12.7 0.613 ‑172.1 39.1 14.5 29.3 49.6
2 0.614 126.1 0.652 ‑172.5 39.5 12.9 29.3 49.5
2.4 0.649 145.0 0.682 ‑171.5 40.0 12.0 29.4 46.8
3.9 0.552 ‑162.8 0.670 ‑151.2 38.1 9.6 27.9 39.1
Figure 7. Simplied schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply. Transmission line
tapers, tee intersections, bias lines and parasitic values are not shown.
RF Input
1.5 pF
3.9 nH
1.5 pF
RF Output
50 Ohm
.02 λ
110 Ohm
.03 λ
110 Ohm
.03 λ
50 Ohm
.02 λ
DUT
1 pF
12 nH
15 Ohm
2.2 µF
Gate
Supply
47 nH
2.2 µF
Drain
Supply
5
ATF-521P8 Typical Performance Curves (at 25°C unless specied otherwise)
Tuned for Optimal OIP3
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
6
ATF-521P8 Typical Performance Curves, continued (at 25°C unless specied otherwise)
Tuned for Optimal OIP3
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive.

ATF-521P8-TR1

Mfr. #:
Manufacturer:
Broadcom / Avago
Description:
RF JFET Transistors Transistor GaAs High Linearity
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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