74HC_HCT20 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 18 November 2015 3 of 15
NXP Semiconductors
74HC20; 74HCT20
Dual 4-input NAND gate
5.2 Pin description
6. Functional description
[1] H = HIGH voltage level; L = LOW voltage level; X = don’t care.
7. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For SO14 package: P
tot
derates linearly with 8 mW/K above 70 C.
For (T)SSOP14 packages: P
tot
derates linearly with 5.5 mW/K above 60 C.
Table 2. Pin description
Symbol Pin Description
1A, 1B, 1C, 1D 1, 2, 4, 5 data input
n.c. 3, 11 not connected
1Y 6 data output
GND 7 ground (0 V)
2Y 8 data output
2A, 2B, 2C, 2D 9, 10, 12, 13 data input
V
CC
14 supply voltage
Table 3. Function table
[1]
Input Output
nA nB nC nD nY
LXXXH
XLXXH
XXLXH
XXXLH
HHHHL
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 0.5 +7 V
I
IK
input clamping current V
I
< 0.5 V or V
I
>V
CC
+0.5 V
[1]
- 20 mA
I
OK
output clamping current V
O
< 0.5 V or V
O
>V
CC
+0.5V
[1]
- 20 mA
I
O
output current 0.5 V < V
O
< V
CC
+0.5V - 25 mA
I
CC
supply current - 50 mA
I
GND
ground current 50 - mA
T
stg
storage temperature 65 +150 C
P
tot
total power dissipation SO14, and (T)SSOP14 packages
[2]
-500mW
74HC_HCT20 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 18 November 2015 4 of 15
NXP Semiconductors
74HC20; 74HCT20
Dual 4-input NAND gate
8. Recommended operating conditions
9. Static characteristics
Table 5. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V)
Symbol Parameter Conditions 74HC20 74HCT20 Unit
Min Typ Max Min Typ Max
V
CC
supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
V
I
input voltage 0 - V
CC
0-V
CC
V
V
O
output voltage 0 - V
CC
0-V
CC
V
T
amb
ambient temperature 40 +25 +125 40 +25 +125 C
t/V input transition rise and fall rate V
CC
= 2.0 V - - 625 - - - ns/V
V
CC
= 4.5 V - 1.67 139 - 1.67 139 ns/V
V
CC
= 6.0 V - - 83 - - - ns/V
Table 6. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
74HC20
V
IH
HIGH-level
input voltage
V
CC
= 2.0 V 1.5 1.2 - 1.5 - 1.5 - V
V
CC
= 4.5 V 3.15 2.4 - 3.15 - 3.15 - V
V
CC
= 6.0 V 4.2 3.2 - 4.2 - 4.2 - V
V
IL
LOW-level
input voltage
V
CC
= 2.0 V - 0.8 0.5 - 0.5 - 0.5 V
V
CC
= 4.5 V - 2.1 1.35 - 1.35 - 1.35 V
V
CC
= 6.0 V - 2.8 1.8 - 1.8 - 1.8 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 2.0 V 1.9 2.0 - 1.9 - 1.9 - V
I
O
= 20 A; V
CC
= 4.5 V 4.4 4.5 - 4.4 - 4.4 - V
I
O
= 20 A; V
CC
= 6.0 V 5.9 6.0 - 5.9 - 5.9 - V
I
O
= 4.0 mA; V
CC
= 4.5 V 3.98 4.32 - 3.84 - 3.7 - V
I
O
= 5.2 mA; V
CC
= 6.0 V 5.48 5.81 - 5.34 - 5.2 - V
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 2.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 20 A; V
CC
= 4.5 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 20 A; V
CC
= 6.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 4.0 mA; V
CC
= 4.5 V - 0.15 0.26 - 0.33 - 0.4 V
I
O
= 5.2 mA; V
CC
= 6.0 V - 0.16 0.26 - 0.33 - 0.4 V
I
I
input leakage
current
V
I
= V
CC
or GND;
V
CC
=6.0V
--0.1 - 1-1 A
I
CC
supply current V
I
= V
CC
or GND; I
O
=0A;
V
CC
=6.0V
--2 - 20 - 40A
74HC_HCT20 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 18 November 2015 5 of 15
NXP Semiconductors
74HC20; 74HCT20
Dual 4-input NAND gate
C
I
input
capacitance
-3.5- - - - -pF
74HCT20
V
IH
HIGH-level
input voltage
V
CC
= 4.5 V to 5.5 V 2.0 1.6 - 2.0 - 2.0 - V
V
IL
LOW-level
input voltage
V
CC
= 4.5 V to 5.5 V - 1.2 0.8 - 0.8 - 0.8 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20 A 4.4 4.5 - 4.4 - 4.4 - V
I
O
= 4.0 mA 3.98 4.32 - 3.84 - 3.7 - V
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20 A - 0 0.1 - 0.1 - 0.1 V
I
O
= 5.2 mA - 0.15 0.26 - 0.33 - 0.4 V
I
I
input leakage
current
V
I
= V
CC
or GND;
V
CC
=5.5V
--0.1 - 1-1 A
I
CC
supply current V
I
= V
CC
or GND; I
O
=0A;
V
CC
=5.5V
--2 - 20 - 40A
I
CC
additional
supply current
per input pin;
V
I
=V
CC
2.1 V; I
O
=0A;
other inputs at V
CC
or GND;
V
CC
= 4.5 V to 5.5 V
- 30 108 - 135 - 147 A
C
I
input
capacitance
-3.5- - - - -pF
Table 6. Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max

74HCT20DB,112

Mfr. #:
Manufacturer:
Nexperia
Description:
Logic Gates DUAL 4-INPUT NAND
Lifecycle:
New from this manufacturer.
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