VS-ST333SP Series
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Vishay Semiconductors
Revision: 01-Mar-17
2
Document Number: 94377
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CURRENT CARRYING CAPABILITY
FREQUENCY UNITS
50 Hz 840 600 1280 1040 5430 4350
A
400 Hz 650 450 1280 910 2150 1560
1000 Hz 430 230 1090 730 1080 720
2500 Hz 140 60 490 250 400 190
Recovery voltage V
R
50 50 50
V
Voltage before turn-on V
D
V
DRM
V
DRM
V
DRM
Rise of on-state current dI/dt 50 - - A/μs
Case temperature 507550755075°C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 /μF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state
current at case temperature
I
T(AV)
180° conduction, half sine wave
330 A
75 °C
Maximum RMS on-state current I
T(RMS)
DC at 63 °C case temperature 518
A
Maximum peak, one half cycle,
non-repetitive surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
11 000
t = 8.3 ms 11 520
t = 10 ms
100 % V
RRM
reapplied
9250
t = 8.3 ms 9700
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
605
kA
2
s
t = 8.3 ms 550
t = 10 ms
100 % V
RRM
reapplied
430
t = 8.3 ms 390
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 6050 kA
2
s
Maximum peak on-state voltage V
TM
I
TM
= 1810 A, T
J
= T
J
maximum,
t
p
= 10 ms sine wave pulse
1.96
V
Low level value of threshold voltage V
T(TO)1
(16.7 % x x I
T(AV)
< I < x I
T(AV)
), T
J
= T
J
maximum 0.91
High level value of threshold voltage V
T(TO)2
(I > x I
T(AV)
), T
J
= T
J
maximum 0.92
Low level value of forward slope resistance r
t1
(16.7 % x x I
T(AV)
< I < x I
T(AV)
), T
J
= T
J
maximum 0.58
m
High level value of forward slope
resistance
r
t2
(I > x I
T(AV)
), T
J
= T
J
maximum 0.58
Maximum holding current I
H
T
J
= 25 °C, I
T
> 30 A 600
mA
Typical latching current I
L
T
J
= 25 °C, V
A
= 12 V, R
a
= 6 , I
G
= 1 A 1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current
dI/dt
T
J
= T
J
maximum, V
DRM
= Rated V
DRM
I
TM
= 2 x dI/dt
1000 A/μs
Typical delay time t
d
T
J
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 50 A DC, t
p
= 1 μs
Resistive load, gate pulse: 10 V, 5 source
1.0
μs
Maximum turn-off time t
q
T
J
= T
J
maximum,
I
TM
= 550 A, commutating dI/dt = 40 A/μs
V
R
= 50 V, t
p
= 500 μs, dV/dt = 200 V/μs
15
180° el
I
TM
100 µs
I
TM