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VS-ST333S08MFL1P

P1-P3P4-P6P7-P9P10-P10
VS-ST333SP Series
www.vishay.com
Vishay Semiconductors
Revision: 01-Mar-17
7
Document Number: 94377
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
Fig. 15 - Gate Characteristics
1E1
1E2
1E3
1E4
1E5
1E1 1E2 1E3 1E4
Pulse Ba sew id t h ( µs)
20 jo ules p er p ulse
2
1
Peak On-state Current (A)
0.5
10
5
3
0.3
ST33 3 S Se r i e s
Sinusoidal pulse
tp
1E4
0.2
1E1 1E2 1E3 1E4
Pulse Ba se w id t h (µs)
20 joule s p er pulse
2
1
0.5
10
5
ST3 3 3 S Se ri e s
Rectangular pulse
di/dt = 50A/µs
tp
1E1
3
0.4
0.3
0.2
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj = 2 5 ° C
Tj = 1 2 5 ° C
Tj = - 4 0 ° C
(1)
(2)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
(3)
De vic e : ST333S Series
(4)
Fr e q u e n c y Li m it e d b y PG ( A V )
VS-ST333SP Series
www.vishay.com
Vishay Semiconductors
Revision: 01-Mar-17
8
Document Number: 94377
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95080
- Thyristor
2
- Essential part number
3
- 3 = Fast turn-off
4
- S = Compression bonding stud
5
- Voltage code x 100 = V
RRM
6
- P = Stud base 3/4" 16UNF-2A / M = metric device
7
- Reapplied dV/dt code (for t
q
test condition) F = 200 V/µs
8
-t
q
code (L = 15 µs) M = 12 µs
9
- 0 = Eyelet terminals
1 = Fast-on terminals
11
10
(see Voltage Ratings table)
(gate and auxiliary cathode leads)
(gate and auxiliary cathode leads)
Note: For metric device M24 x 1.5 contact factory
Device code
51
32 4
6 7 8 9 10 11
STVS- 33 3 S 08 P F L 0 P
1 - Vishay Semiconductors product
- None = Standard production
- P = Lead (Pb)-free
Document Number: 95080 For technical questions, contact: indmodules@vishay.com
www.vishay.com
Revision: 02-Aug-07 1
TO-209AE (TO-118)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
Note
(1)
For metric device: M24 x 1.5 - length 21 (0.83) maximum
Red cathode
Red silicon rubber
10.5 (0.41) NOM.
245 (9.65) ± 10 (0.39)
White gate
4.3 (0.17) DIA.
Ceramic housing
White shrink
47 (1.85)
MAX.
245 (9.65)
255 (10.04)
38 (1.50)
MAX. DIA.
22 (0.87) MAX.
21 (0.82) MAX.
SW 45
Flexible leads
4.5 (0.18) MAX.
C.S. 50 mm
2
(0.078 s.i.)
Red shrink
49 (1.92) MAX.
3/4"16 UNF-2A
(1)
27.5 (1.08)
MAX.
Fast-on terminals
AMP. 280000-1
REF-250
9.5 (0.37) MIN.
22 (0.86) MIN.
P1-P3P4-P6P7-P9P10-P10

VS-ST333S08MFL1P

Mfr. #:
Buy VS-ST333S08MFL1P
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules Thyristors - TO-118 COMP RND-e3
Lifecycle:
New from this manufacturer.
Delivery:
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