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VS-ST333S08MFL1P

P1-P3P4-P6P7-P9P10-P10
VS-ST333SP Series
www.vishay.com
Vishay Semiconductors
Revision: 01-Mar-17
4
Document Number: 94377
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350
Maximum Allowable Case Temperature (°C)
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduc tion Angle
ST333S Series
R (DC) = 0.10 K/ W
thJC
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Cond uc tion Period
ST3 3 3 S Se r i e s
R (DC) = 0.10 K/ W
thJC
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R
=
0
.
0
1K
/
W
-
D
e
l
t
a
R
t
h
S
A
0
.
0
3
K
/
W
0
.
0
6
K
/
W
0
.
0
8
K
/
W
0
.
1
2
K
/
W
0
.
1
6
K
/
W
0
.
2
K
/
W
0
.
3
K
/
W
0
.
5
K
/
W
0
50
100
150
200
250
300
350
400
450
500
0 50 100 150 200 250 300 350
180°
120°
90°
60°
30°
RM S Li m it
Conduc tion Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST3 3 3 S Se r i e s
T = 1 2 5 ° C
J
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R
=
0
.
0
1
K
/
W
-
D
e
l
t
a
R
t
h
S
A
0
.
0
3
K
/
W
0
.
0
6
K
/
W
0
.
1
2
K
/
W
0
.
2
K
/
W
0
.
3
K
/
W
0
.
5
K
/
W
0
100
200
300
400
500
600
700
0 100 200 300 400 500 600
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Period
Ma ximum Average On-st ate Pow er Loss (W)
Average On-state Current (A)
ST3 3 3 S Se r i e s
T = 1 2 5 ° C
J
VS-ST333SP Series
www.vishay.com
Vishay Semiconductors
Revision: 01-Mar-17
5
Document Number: 94377
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Fig. 9 - Reverse Recovered Charge Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
4000
5000
6000
7000
8000
9000
10000
110100
Number Of Eq ua l Amp litude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
Initia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST3 3 3 S Se r i e s
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
4000
5000
6000
7000
8000
9000
10000
11000
0.01 0.1 1
Pul se Tra in Du ra t io n (s)
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Peak Half Sine Wave On-state Current (A)
Init ia l T = 125°C
No Volt a g e Re a pp lied
RRM
J
ST3 3 3 S Se r i e s
Maximum Non Repetitive Surge Current
Rated V Reapplied
100
1000
10000
01234567
T = 2 5 ° C
J
Instantaneous On-state Current (A)
In st a n t a n e o us O n - st a t e V o lt a g e ( V )
T = 1 2 5 ° C
J
ST3 3 3 S Se r i e s
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Sq u a r e W a v e Pu l se D u r a t i o n ( s)
thJC
Transient Thermal Impedanc e Z (K/ W)
Steady State Value
R = 0.10 K/ W
(DC Operation)
thJC
ST333S Series
80
100
120
140
160
180
200
220
240
260
280
300
320
10 20 30 40 50 60 70 80 90 100
Ra te Of Fall Of On-sta te Current - di/ d t (A/ µs)
I = 500 A
300 A
200 A
100 A
50 A
Maximum Reverse Recovery Charge - Qrr (µC)
ST333S Series
T = 1 2 5 ° C
J
TM
VS-ST333SP Series
www.vishay.com
Vishay Semiconductors
Revision: 01-Mar-17
6
Document Number: 94377
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 11 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
Fig. 13 - Frequency Characteristics
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pu lse Ba se w i d t h ( µ s)
Pea k On-sta te Current (A)
1000
1500
200
500
Snub b er c irc uit
R = 1 0 o h m s
C = 0.47 µF
V = 80% V
s
s
D
DRM
2000
ST3 3 3 S Se r i e s
Si n u so i d a l p u l se
T = 50°C
C
1E4
tp
3000
5000
1E1 1E2 1E3 1E4
50 Hz
400
100
Pu l se Ba se w i d t h ( µ s)
1000
1500
200
500
Sn u b b e r c i r c u i t
R = 1 0 o h m s
C = 0.47 µF
V = 80% V
s
s
D
DRM
ST3 3 3 S Se r i e s
Sinusoid a l p ulse
T = 75°C
C
tp
1E1
2000
2500
3000
1E1
1E2
1E3
1E4
1E11E21E31E4
100
1500
200
Pu l se Ba se w id t h ( µ s)
Pea k On-sta te Current (A)
2500
400
1000
50 Hz
500
Snub b er c irc uit
R = 1 0 o h m s
C = 0.47 µF
V = 80% V
s
s
D
DRM
ST333S Se ries
Trapezoidal pulse
T = 50°C
di/dt = 50A/µs
C
1E4
2000
3000
1E1 1E2 1E3 1E4
50 Hz
400
100
1000
1500
200
Pu lse Ba se w id t h ( µ s)
500
Sn u b b e r c i r c u i t
R = 1 0 o h m s
C = 0.47 µF
V = 80% V
s
s
D
DRM
ST3 3 3 S Se r i e s
Trapezoidal pulse
T = 75°C
di/dt = 50A/µs
C
2000
2500
3000
1E1
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
1000
1500
200
Pulse Ba se w id t h ( µs)
Pea k On-sta te Current (A)
2000
Sn u b b e r c i r c u i t
R = 1 0 o h m s
C = 0.47 µF
V = 80% V
s
s
D
DRM
ST3 3 3 S Se r i e s
Tr a p e zo i d a l p u l se
T = 5 0 ° C
di/dt = 100A/µs
C
tp
1E4
500
3000
1E1 1E2 1E3 1E4
50 Hz
400
100
1000
1500
200
Pu lse Ba se w id t h ( µ s)
Sn u b b e r c i r c u i t
R = 1 0 o h m s
C = 0.47 µF
V = 80% V
s
s
D
DRM
2000
ST3 3 3 S Se r i e s
Trapezoidal pulse
T = 7 5 ° C
di/dt = 100A/µs
C
tp
500
1E1
2500
3000
P1-P3P4-P6P7-P9P10-P10

VS-ST333S08MFL1P

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Buy VS-ST333S08MFL1P
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules Thyristors - TO-118 COMP RND-e3
Lifecycle:
New from this manufacturer.
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