LTC4217
4
4217fg
For more information www.linear.com/LTC4217
elecTrical characTerisTics
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: All currents into pins are positive, all voltages are referenced to
GND unless otherwise specified.
Note 3: An internal clamp limits the GATE pin to a maximum of 6.5V above
OUT. Driving this pin to voltages beyond the clamp may damage the device.
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
DD
= 12V unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
Inputs
I
IN
OV, UV, FB Input Current V = 1.2V, LTC4217
l
0 ±1 µA
R
IN
OV, UV, FB Input Resistance LTC4217-12
l
13 18 23
V
TH
OV, UV, FB Threshold Voltage V
PIN
Rising
l
1.21 1.235 1.26 V
∆V
OV(HYST)
OV Hysteresis
l
10 20 30 mV
∆V
UV(HYST)
UV Hysteresis
l
50 80 110 mV
V
UV(RTH)
UV Reset Threshold Voltage V
UV
Falling
l
0.55 0.62 0.7 V
∆V
FB(HYST)
FB Power Good Hysteresis
l
10 20 30 mV
R
ISET
I
SET
Internal Resistor
l
19 20 21
Outputs
V
OL
PG, F LT Pin Output Low Voltage I
SINK
= 2mA
C-Grade, I-Grade
H-Grade
l
l
0.4
0.4
0.8
0.92
V
V
I
OH
PG, F LT Pin Input Leakage Current 30V
l
0 ±10 µA
V
TIMER(H)
TIMER Pin High Threshold V
TIMER
Rising
l
1.2 1.235 1.28 V
V
TIMER(L)
TIMER Pin Low Threshold V
TIMER
Falling
l
0.1 0.21 0.3 V
I
TIMER(UP)
TIMER Pin Pull-Up Current V
TIMER
= 0V
l
80 –100 –120 µA
I
TIMER(DN)
TIMER Pin Pull-Down Current V
TIMER
= 1.2V
l
1.4 2 2.6 µA
I
TIMER(RATIO)
TIMER Pin Current Ratio I
TIMER(DN)
/I
TIMER(UP)
l
1.6 2 2.7 %
A
IMON
I
MON
Pin Current Gain I
OUT
= 2A
l
47.5 50 52.5 µA/A
BW
IMON
I
MON
Bandwidth 250 kHz
I
OFF(IMON)
I
MON
Pin Offset Current I
OUT
= 132mA
l
0 ±7.5 µA
I
GATE(UP)
Gate Pull-Up Current Gate Drive On, V
GATE
= V
OUT
= 12V
l
–19 –24 –29 µA
I
GATE(DN)
Gate Pull-Down Current Gate Drive Off, V
GATE
= 18V, V
OUT
= 12V
C-Grade, I-Grade
H-Grade
l
l
190
164
250
140
400
500
µA
µA
I
GATE(FST)
Gate Fast Pull-Down Current Fast Turn Off, V
GATE
= 18V, V
OUT
= 12V 140 mA
AC Characteristics
t
PHL(GATE)
Input High (OV), Input Low (UV) to Gate Low
Propagation Delay
V
GATE
< 16.5V Falling
l
8 10 µs
t
PHL(ILIM)
Short-Circuit to Gate Low V
FB
= 0, Step I
SENSE
to 1.2A,
V
GATE
< 16.5V Falling
l
1 5 µs
t
D(ON)
Turn-On Delay Step V
UV
to 2V, V
GATE
> 13V
l
50 100 150 ms
t
D(FAULT)
UV Low to Clear Fault Latch Delay 1 µs
t
D(CB)
Circuit Breaker Filter Delay Time (Internal) V
FB
= 0V, Step I
SENSE
to 1.2A
C-Grade, I-Grade
H-Grade
l
l
1.5
1.4
2
2
2.7
2.7
ms
ms
t
D(AUTO-RETRY)
Auto-Retry Turn-On Delay (Internal)
l
50 100 150 ms
Note 4: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 125°C when overtemperature protection is active.
Continuous operation above the specified maximum operating junction
temperature may impair device reliability.
Note 5: T
J
is calculated from the ambient temperature, T
A
, and power
dissipation, P
D
, according to the formula:
LTC4217DHC, LTC4217DHC-12: T
J
= T
A
+ (P
D
43°C/W)
LTC4217FE: T
J
= T
A
+ (P
D
38°C/W)
LTC4217
5
4217fg
For more information www.linear.com/LTC4217
TEMPERATURE (°C)
–50
I
SET
RESISTOR (kΩ)
22
21
20
19
18
–25 0 25
4217 G09
50 75 100
FB VOLTAGE (V)
0
0
CURRENT LIMIT VALUE (A)
0.5
1.0
1.5
2.0
2.5
0.2 0.4 0.6 0.8
4217 G07
1.0 1.2
R
SET
(Ω)
1k
0
CURRENT LIMIT THRESHOLD VALUE (A)
0.5
1.0
1.5
2.0
2.5
10k 100k 1M
4217 G08
10M
TEMPERATURE (°C)
–50
UV HYSTERESIS (V)
0.10
0.08
0.06
0.04
–25 0 25
4217 G04
50 75 100
TEMPERATURE (°C)
–50
TIMER PULL-UP CURRENT (µA)
–110
–105
–100
–95
–90
–25 0 25
4217 G05
50 75 100
TEMPERATURE (°C)
–50
UV LOW-HIGH HRESHOLD (V)
1.234
1.232
1.230
1.228
1.226
–25 0 25
4217 G03
50 75 100
V
DD
(V)
0
1.0
DD
1.2
1.4
1.6
1.8
5 10 15 20
4217 G01
25 30
–40°C
25°C
85°C
I
LOAD
(mA)
0
0
0.5
1.5
1.0
INTV
CC
(V)
3.5
2.0
2.5
3.0
4217 G02
–14–12–10–8–6–4–2
V
DD
= 5V
V
DD
= 3.3V
Typical perForMance characTerisTics
I
DD
vs V
DD
INTV
CC
Load Regulation
UV Low-High Threshold
vs Temperature
UV Hysteresis vs Temperature
Timer Pull-Up Current
vs Temperature
Current Limit Delay
(t
PHL(ILIM)
vs Overdrive)
Current Limit Threshold Foldback
Current Limit Adjustment
(I
OUT
vs R
SET
)
Internal I
SET
Resistor (R
ISET
)
T
A
= 25°C, V
DD
= 12V unless otherwise noted.
OUTPUT CURRENT (A)
CURRENT LIMIT PROPAGATION DELAY (µs)
1000
100
10
1
0.1
0 10
4217 G06
2 4 6 8
LTC4217
6
4217fg
For more information www.linear.com/LTC4217
TEMPERATURE (°C)
–50
0.9
0.8
0.7
0.6
0.5
0.4
0.3
–25 0 25
4217 G18
50 75 150125100
V
ISET
(V)
TEMPERATURE (°C)
–50
105
100
95
90
85
80
–25 0 25
4217 G13
50 75 100
I
MON
(µA)
V
DD
= 3.3V, 12V, 24V
I
LOAD
= 2A
TEMPERATURE (°C)
–50
I
GATE
PULL-UP (µA)
–26.0
–25.5
–25.0
–24.5
–24.0
–25 0 25
4217 G14
50 75 100
I
GATE
(µA)
0
0
∆V
GATE
(V
GATE
– V
OUT
) (V)
7
6
5
4
3
2
1
–5 –10 –15 –20
4217 G15
–25 –30
V
DD
= 12V
V
DD
= 3.3V
V
DD
(V)
0
6.2
6.0
5.8
5.6
5.4
5.2
5 10 15
4217 G16
20 25 30
∆V
GATE
(V
GATE
– V
OUT
) (V)
TEMPERATURE (°C)
–50
6.15
6.14
6.13
6.12
6.11
6.10
–25 0 25
4217 G17
50 75 100
∆V
GATE
(V
GATE
– V
OUT
) (V)
I
LOAD
(mA)
0
0
OUT
12
10
8
6
4
2
2 4 6 8
4217 G12
10 12
FLT
PG
TEMPERATURE (°C)
–50
60
50
40
30
20
10
0
–25 0 25
4217 G10
50 75 100
R
ON
(mΩ)
V
DD
= 3.3V, 12V, 24V
V
DS
(V)
0.1
0.01
I
D
(A)
0.1
1
10
1 10 100
4217 G11
T
A
= 25°C
MULTIPLE PULSE
DUTY CYCLE = 0.2
DC
10s
100ms
10ms
1ms
1s
Typical perForMance characTerisTics
R
ON
vs V
DD
and Temperature
MOSFET SOA Curve
I
MON
vs Temperature and V
DD
Gate Drive vs
Gate Pull-Up Current
PG, F LT V
OUT
Low vs I
LOAD
T
A
= 25°C, V
DD
= 12V unless otherwise noted.
GATE Pull-Up Current
vs Temperature
Gate Drive vs V
DD
Gate Drive vs Temperature
V
ISET
vs Temperature

LTC4217CDHC-12#PBF

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Hot Swap Voltage Controllers 2A Int Hot Swap Cntr
Lifecycle:
New from this manufacturer.
Delivery:
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