Architecture
The single-chip, Micron-developed ASIC controller, along with the host and Flash inter-
faces, provide an embedded ATA host bus adapter, a host/Flash translation layer, Flash
maintenance, channel control, and Flash RAID (RAIN) protection.
Flash endurance and reliability are optimized through the Flash maintenance features,
including static and dynamic wear leveling and RAIN protection. Most of these func-
tions are implemented directly within the controller hardware to optimize perform-
ance. The device is shipped in the configurations shown below.
Table 1: P320h HHHL Configurations
User Capacity NAND Flash Process NAND Flash Density Package Count Die per BGA Package
350GB 34nm 16Gb 64 4
700GB 34nm 16Gb 64 8
Performance Specifications
Table 2: Performance Specifications
Specification 350GB 700GB
Sequential read (up to) 3.2 GB/s 3.2 GB/s
Sequential write (up to) 1.9 GB/s 1.9 GB/s
Random read (up to) 785,000 IOPS 785,000 IOPS
Random write (up to) 175,000 IOPS 205,000 IOPS
READ latency <47µs <47µs
WRITE latency <311µs (nonposted) <311µs (nonposted)
Notes:
1. Transient peaks above 25W are possible under heavy write workloads. 10ms RMS aver-
age measurements taken.
2. Drive is erased and filled with zeroes to achieve preconditioned state .
3. 128KB transfers are used for sequential read/write values; 4KB transfers are used for
random read/write values.
4. I/O performance numbers are measured in steady state using FIO with a preconditioned
drive under RHEL 6.3 with a queue depth of 256 and with raw device access on systems
with a single Intel Xeon E5-2667 2.90 GHz processor with 6 cores, 12 logical and hyper-
threading enabled.
5. Steady state performance is defined as conforming to the SNIA V1.0 Performance Test
Specification.
6. Performance numbers derived from tests at room temperature.
7. Latency performance numbers are measured using FIO with queue depth 1, random
transfer, 512-byte transfer size for READ latency, 4KB transfer size for WRITE latency.
8. Performance numbers are notated in base 10.
P320h HHHL PCIe NAND SSD
Architecture
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Functional Description
Data Retention
Data retention refers to the SSD's media (NAND Flash) capability to retain programmed
data when the SSD is powered off. The two primary factors that influence data retention
are degree of use (the number of PROGRAM/ERASE cycles on the media) and tempera-
ture.
Degree of use: As NAND Flash is used (programmed and erased), its natural ability to
retain charge (programmed data) decreases. When the SSD ships from the factory, it is
typically able to retain user data for up to 10 years when powered off. As the SSD is used,
this typically decreases to one year.
Temperature: As the temperature increases, data retention decreases.
Note: All data retention related to values in the data sheet are with the SSD powered off.
When the SSD is powered on, data retention is expected to exceed these limits. Micron
SSD data retention with power removed is one year at 40°C (MAX).
Micron RAIN Technology
Redundant array of independent NAND (RAIN) is a technology developed by Micron
designed to extend the lifespan of the P320h.
Residing in the P320h ASIC controller, RAIN is similar to redundant array of independ-
ent disks (RAID) technology, but instead of grouping and striping disks, RAIN groups
and stripes storage elements on the SSD across multiple channels, generating and stor-
ing parity data along with user data (one page of parity for every seven pages of user
data). This data structure (user data plus parity) enables complete, transparent data re-
covery if a single storage element (NAND page, block, or die) fails. If a failure occurs, the
P320h automatically detects it and transparently rebuilds the data. During this RAIN re-
build process, the drive's performance is reduced temporarily but will recover after the
rebuild process completes.
Wear Leveling
Wear leveling is a technique that spreads Flash block use over the entire memory array
to equalize the PROGRAM/ERASE cycles on all blocks in the array. This helps to en-
hance the lifespan of the SSD. The P320h supports both static and dynamic wear level-
ing.
Static wear leveling considers all Flash blocks in the SSD regardless of data content or
access and maintains an even level of wear across the drive. Dynamic wear leveling
monitors available free space on the drive and dynamically moves data between Flash
blocks to equalize wear on each block. Both techniques are used together within the
controller to optimally balance the wear profile of the Flash array along with the drive's
lifespan.
P320h HHHL PCIe NAND SSD
Functional Description
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
SMART Attribute Summary
Table 3: SMART Command Reference
1
Attribute ID Hex ID Name SMART Trip Description
9 0x09 Power-on hours count No Lifetime powered-on hours, from the time the
device leaves the factory
12 0x0C Power cycle count No Count of power cycles
170 0xAA New failing block
count
No Grown defects
171 0xAB Program fail count No Number of NAND program status failures
172 0xAC Erase fail count No Number of NAND erase status failures
174 0xAE Unexpected power loss
count
No Number of unexpected power-loss occurrences
187 0xBB Reported uncorrecta-
ble errors count
No Number of ECC correction failures
188 0xBC Command timeout
count
No Number of command timeouts, defined by an
active command being interrupted by a HRESET,
COMRESET, SRST, or other command
194 0xC2 Temperature No The on-die temperature sensor within the con-
troller ASIC in degrees C, capturing the lifetime
high and low temperatures measured
202 0xCA Percentage of the rat-
ed lifetime used
No Cumulative erase count / lifetime erase count as
expressed as a percent. Lifetime erase count is
the total number of available blocks * block en-
durance for the flash technology, read directly
from the NAND device.
232 0xE8 Available reserved
space
No Percentage of spare blocks remaining
Spare block count
241 0xF1 Power-on (minutes) No Lifetime power-on time in minutes
242 0xF2 Write protect progress No Progress toward WRITE PROTECT mode: reports
100% when the drive becomes read only
Note:
1. Attribute/Hex IDs are noted for distribution product. Specific OEMs may have different
ID values, but the same list of SMART commands applies.
P320h HHHL PCIe NAND SSD
SMART Attribute Summary
PDF: 09005aef848cbdf4
realssd_p320h_hhhl_distribution.pdf - Rev. V 8/2014 EN
6
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.

MTFDGAR350SAH-1N3AB

Mfr. #:
Manufacturer:
Micron
Description:
SSD 350GB PCIE 2.0 SLC 12V
Lifecycle:
New from this manufacturer.
Delivery:
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