SiR662DP
www.vishay.com
Vishay Siliconix
S15-0084-Rev. G, 26-Jan-15
1
Document Number: 65253
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 60 V (D-S) MOSFET
Ordering Information:
SiR662DP-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET
®
power MOSFET
• 100 % R
g
and UIS tested
•Low Q
g
for high efficiency
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Primary side switch
•POL
• Synchronous rectifier
•DC/DC converter
• Amusement system
• Industrial
• LED backlighting
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 54 °C/W.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
a
Q
g
(TYP.)
60
0.0027 at V
GS
= 10 V
100 27.5 nC0.0033 at V
GS
= 6 V
0.0048 at V
GS
= 4.5 V
PowerPAK
®
SO-8 Single
Top View
1
6.15 mm
5.15 mm
Bottom View
4
G
3
S
2
S
1
S
D
8
D
6
D
7
D
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
60
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
100
a
A
T
C
= 70 °C 100
a
T
A
= 25 °C 35.8
b, c
T
A
= 70 °C 28.6
b, c
Pulsed Drain Current (60 μs Pulse Width) I
DM
350
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
94
T
A
= 25 °C 5.6
b, c
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
40
Single Pulse Avalanche Energy E
AS
80 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
104
W
T
C
= 70 °C 66.6
T
A
= 25 °C 6.25
b ,c
T
A
= 70 °C 4
b,c
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum Junction-to-Ambient
b, f
t ≤ 10 s R
thJA
15 20
°C/W
Maximum Junction-to-Case (Drain) Steady State R
thJC
0.9 1.2