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SIR662DP-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P13
SiR662DP
www.vishay.com
Vishay Siliconix
S15-0084-Rev. G, 26-Jan-15
4
Document Number: 65253
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
- 1.0
- 0.7
- 0.4
- 0.1
0.2
0.5
- 50 - 25 0 25 50 75 100 125 150
V
GS(th)
- Variance (V)
T
J
- Temperature (°C)
I
= 250 μA
I
D
= 5 mA
0.000
0.003
0.006
0.009
0.012
0.015
0 2 4 6 8 10
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 20 A
0
40
80
120
160
200
0.001 0.01 0.1 1 10
Power (W)
Time (s)
0.01
0.1
1
10
100
0.01 0.1 1 10 100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
100 ms
Limited by R
DS
(
on
)
*
1 ms
I
DM
Limited
T
A
= 25 °C
Single Pulse
BVDSS Limited
10 ms
10 s
1 s
DC
I
D
Limited
100 us
SiR662DP
www.vishay.com
Vishay Siliconix
S15-0084-Rev. G, 26-Jan-15
5
Document Number: 65253
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating*
Power, Junction-to-Case Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
0
32
64
96
128
160
0 255075100125150
I
D
- Drain Current (A)
T
C
-Case Temperature (°C)
Package Limited
0
25
50
75
100
125
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
0.0
0.6
1.2
1.8
2.4
3.0
0 25 50 75 100 125 150
T
A
- Ambient Temperature (°C)
Power (W)
SiR662DP
www.vishay.com
Vishay Siliconix
S15-0084-Rev. G, 26-Jan-15
6
Document Number: 65253
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65253
.
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base=R
thJA
= 54 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
P1-P3P4-P6P7-P9P10-P12P13-P13

SIR662DP-T1-GE3

Mfr. #:
Buy SIR662DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET
Lifecycle:
New from this manufacturer.
Delivery:
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