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SIR662DP-T1-GE3

SIR662DP-T1-GE3
Mfr. #:
SIR662DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET
Lifecycle:
New from this manufacturer.
Datasheet:
SIR662DP-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR662DP-T1-GE3 DatasheetSIR662DP-T1-GE3 Datasheet (P4-P6)SIR662DP-T1-GE3 Datasheet (P7-P9)SIR662DP-T1-GE3 Datasheet (P10-P12)SIR662DP-T1-GE3 Datasheet (P13)
ECAD Model:
More Information:
SIR662DP-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-SO-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
100 A
Rds On - Drain-Source Resistance:
2.2 mOhms
Vgs th - Gate-Source Threshold Voltage:
1 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
96 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
104 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
TrenchFET, PowerPAK
Packaging:
Reel
Height:
1.04 mm
Length:
6.15 mm
Series:
SIR
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
82 S
Fall Time:
11 ns
Product Type:
MOSFET
Rise Time:
11 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
33 ns
Typical Turn-On Delay Time:
14 ns
Part # Aliases:
SIR662DP-GE3
Unit Weight:
0.017870 oz
Tags
SIR662DP-T1, SIR662DP-T, SIR662, SIR66, SIR6, SIR
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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans MOSFET N-CH 60V 100A 8-Pin PowerPAK SO T/R / MOSFET N-CH 60V 60A PPAK SO-8
***ied Electronics & Automation
60V 2.7mOhm@10V 60A N-Ch MV T-FET
***nell
MOSFET, N CH, DIO, 60V, 60A, PPK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
SiR662DP TrenchFET® Power MOSFET
Vishay Siliconix SiR662DP 60V N-Channel TrenchFET® Power MOSFET provides industry-leading on-resistance values up to 27% lower than the next closest competing device. Vishay Siliconix SiR662DP TrenchFET® Power MOSFET also offer the industry's best on-resistance times gate charge figure of merit (FOM) that is up to 57% better than the closest competing device. SiR662DP TrenchFET® Power MOSFET provide lower conduction losses while also lowering switching losses, especially at higher frequency. It is designed for use in secondary side synchronous rectification in DC/DC and AC/DC converters, primary side switching in DC/DC converters, point-of-load modules, motor drives, bridge inverters, and mechanical relay replacement applications. Learn More
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Part # Mfg. Description Stock Price
SIR662DP-T1-GE3
DISTI # SIR662DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 60V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.9623
SIR662DP-T1-GE3
DISTI # SIR662DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 60V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.0646
  • 500:$1.2848
  • 100:$1.6519
  • 10:$2.0560
  • 1:$2.2800
SIR662DP-T1-GE3
DISTI # SIR662DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 60V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.0646
  • 500:$1.2848
  • 100:$1.6519
  • 10:$2.0560
  • 1:$2.2800
SIR662DP-T1-GE3
DISTI # SIR662DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 60V 35.8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR662DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.9429
  • 6000:$0.9149
  • 12000:$0.8779
  • 18000:$0.8529
  • 30000:$0.8299
SIR662DP-T1-GE3
DISTI # 83T3534		Vishay IntertechnologiesMOSFET, N CHANNEL, 60V, 60A, POWERPAKSO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes0
  • 1:$2.0200
  • 25:$1.6800
  • 50:$1.4900
  • 100:$1.3000
  • 250:$1.2200
  • 500:$1.1400
  • 1000:$0.9400
SIR662DP-T1-GE3
DISTI # 65T1666		Vishay IntertechnologiesMOSFET, N CHANNEL, 60V, 60A, POWERPAKSO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes0
  • 1:$0.9590
  • 3000:$0.9530
  • 6000:$0.9080
  • 12000:$0.8040
SIR662DP-T1-GE3
DISTI # 64T4039		Vishay IntertechnologiesMOSFET Transistor, N Channel, 100 A, 60 V, 0.0022 ohm, 10 V, 1 V , RoHS Compliant: Yes0
  • 1:$2.0200
  • 25:$1.6800
  • 50:$1.4900
  • 100:$1.3000
  • 250:$1.2200
  • 500:$1.1400
  • 1000:$0.9400
SIR662DP-T1-GE3
DISTI # 70459586		Vishay Siliconix60V 2.7mOhm@10V 60A N-Ch MV T-FET
RoHS: Compliant		0
  • 3000:$1.2520
SIR662DP-T1-GE3
DISTI # 781-SIR662DP-T1-GE3		Vishay IntertechnologiesMOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET
RoHS: Compliant		0
  • 1:$2.0200
  • 10:$1.6800
  • 100:$1.3000
  • 500:$1.1400
  • 1000:$0.9400
  • 3000:$0.8750
  • 6000:$0.8430
  • 9000:$0.8100
SIR662DP-T1-GE3Vishay IntertechnologiesMOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FETAmericas -
    SIR662DP-T1-GE3
    DISTI # 2056694    		Vishay IntertechnologiesMOSFET, N CH, DIO, 60V,100A, PPK SO8
    RoHS: Compliant    		0
    • 1:$3.2000
    • 10:$2.6600
    • 100:$2.0600
    • 500:$1.8100
    • 1000:$1.5000
    • 3000:$1.3900
    • 6000:$1.3400
    • 9000:$1.2900
    SIR662DP-T1-GE3
    DISTI # 2127797    		Vishay IntertechnologiesMOSFET, N CHANNEL, 60V, 60A, POWERPAKSO-
    RoHS: Compliant    		0
    • 1:$3.2000
    • 10:$2.6600
    • 100:$2.0600
    • 500:$1.8100
    • 1000:$1.5000
    • 3000:$1.3900
    • 6000:$1.3400
    • 9000:$1.2900
    SIR662DP-T1-GE3
    DISTI # 2056694    		Vishay IntertechnologiesMOSFET, N CH, DIO, 60V,100A, PPK SO8
    RoHS: Compliant    		0
    • 1:£1.7100
    • 10:£1.2800
    • 100:£0.9730
    • 250:£0.9120
    • 500:£0.8500
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    Availability
    Stock:
    17
    On Order:
    2000
    Enter Quantity:
    Current price of SIR662DP-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $2.01
    $2.01
    10
    $1.67
    $16.70
    100
    $1.29
    $129.00
    500
    $1.13
    $565.00
    1000
    $0.94
    $939.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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