 |  | | |
| PartNumber | SIR662DP-T1-GE3 | SIR662DP-T1-E3 | SIR662DP-T1-GE |
| Description | MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-SO-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 2.2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 96 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 104 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET, PowerPAK | - | - |
| Packaging | Reel | - | - |
| Height | 1.04 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SIR | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 82 S | - | - |
| Fall Time | 11 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 11 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 33 ns | - | - |
| Typical Turn On Delay Time | 14 ns | - | - |
| Part # Aliases | SIR662DP-GE3 | - | - |
| Unit Weight | 0.017870 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIR662DP-T1-GE3 | MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET | |
Vishay |
SIR662DP-T1-GE3 | IGBT Transistors MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET | |
| SIR662DP-T1-E3 | New and Original | ||
| SIR662DP-T1-GE | New and Original |