SIR662DP-T1-GE3

Mfr. #:: SIR662DP-T1-GE3
Manufacturer:: Vishay
Description:: IGBT Transistors MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET
Lifecycle:: New from this manufacturer.
Datasheet:: SIR662DP-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: SIR662DP-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer: VISHAY

Product Category: FETs - Single

Series: SIRxxxDP

Packaging: Reel

Part-Aliases: SIR662DP-GE3

Unit-Weight: 0.017870 oz

Mounting-Style: SMD/SMT

Tradename: ThunderFET TrenchFET

Package-Case: SO-8

Technology: Si

Number-of-Channels: 1 Channel

Configuration: Single

Transistor-Type: 1 N-Channel

Pd-Power-Dissipation: 104 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Vgs-Gate-Source-Voltage: +/- 20 V

Id-Continuous-Drain-Current: 60 A

Vds-Drain-Source-Breakdown-Voltage: 60 V

Vgs-th-Gate-Source-Threshold-Voltage: 1 V to 2.5 V

Rds-On-Drain-Source-Resistance: 2.7 mOhms

Transistor-Polarity: N-Channel

Qg-Gate-Charge: 64 nC

Forward-Transconductance-Min: 93 S

Tags: SIR662DP-T1, SIR662DP-T, SIR662, SIR66, SIR6, SIR

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

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SIR662DP-T1-GE3 Description

*** Source Electronics: Trans MOSFET N-CH 60V 100A 8-Pin PowerPAK SO T/R / MOSFET N-CH 60V 60A PPAK SO-8

***ied Electronics & Automation: 60V 2.7mOhm@10V 60A N-Ch MV T-FET

***nell: MOSFET, N CH, DIO, 60V, 60A, PPK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

SIR662DP-T1-GE3 More Information

SiR662DP TrenchFET® Power MOSFET: Vishay Siliconix SiR662DP 60V N-Channel TrenchFET® Power MOSFET provides industry-leading on-resistance values up to 27% lower than the next closest competing device. Vishay Siliconix SiR662DP TrenchFET® Power MOSFET also offer the industry's best on-resistance times gate charge figure of merit (FOM) that is up to 57% better than the closest competing device. SiR662DP TrenchFET® Power MOSFET provide lower conduction losses while also lowering switching losses, especially at higher frequency. It is designed for use in secondary side synchronous rectification in DC/DC and AC/DC converters, primary side switching in DC/DC converters, point-of-load modules, motor drives, bridge inverters, and mechanical relay replacement applications. Learn More

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

ThunderFET® Power MOSFETs: Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

Part #	Mfg.	Description	Stock	Price
SIR662DP-T1-GE3 DISTI # SIR662DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 60V 60A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.9623
SIR662DP-T1-GE3 DISTI # SIR662DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 60V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$1.0646 500:$1.2848 100:$1.6519 10:$2.0560 1:$2.2800
SIR662DP-T1-GE3 DISTI # SIR662DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 60V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$1.0646 500:$1.2848 100:$1.6519 10:$2.0560 1:$2.2800
SIR662DP-T1-GE3 DISTI # SIR662DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 35.8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR662DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.9429 6000:$0.9149 12000:$0.8779 18000:$0.8529 30000:$0.8299
SIR662DP-T1-GE3 DISTI # 83T3534	Vishay Intertechnologies	MOSFET, N CHANNEL, 60V, 60A, POWERPAKSO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes	0	1:$2.0200 25:$1.6800 50:$1.4900 100:$1.3000 250:$1.2200 500:$1.1400 1000:$0.9400
SIR662DP-T1-GE3 DISTI # 65T1666	Vishay Intertechnologies	MOSFET, N CHANNEL, 60V, 60A, POWERPAKSO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes	0	1:$0.9590 3000:$0.9530 6000:$0.9080 12000:$0.8040
SIR662DP-T1-GE3 DISTI # 64T4039	Vishay Intertechnologies	MOSFET Transistor, N Channel, 100 A, 60 V, 0.0022 ohm, 10 V, 1 V , RoHS Compliant: Yes	0	1:$2.0200 25:$1.6800 50:$1.4900 100:$1.3000 250:$1.2200 500:$1.1400 1000:$0.9400
SIR662DP-T1-GE3 DISTI # 70459586	Vishay Siliconix	60V 2.7mOhm@10V 60A N-Ch MV T-FET RoHS: Compliant	0	3000:$1.2520
SIR662DP-T1-GE3 DISTI # 781-SIR662DP-T1-GE3	Vishay Intertechnologies	MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET RoHS: Compliant	0	1:$2.0200 10:$1.6800 100:$1.3000 500:$1.1400 1000:$0.9400 3000:$0.8750 6000:$0.8430 9000:$0.8100
SIR662DP-T1-GE3	Vishay Intertechnologies	MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET	Americas -
SIR662DP-T1-GE3 DISTI # 2056694	Vishay Intertechnologies	MOSFET, N CH, DIO, 60V,100A, PPK SO8 RoHS: Compliant	0	1:$3.2000 10:$2.6600 100:$2.0600 500:$1.8100 1000:$1.5000 3000:$1.3900 6000:$1.3400 9000:$1.2900
SIR662DP-T1-GE3 DISTI # 2127797	Vishay Intertechnologies	MOSFET, N CHANNEL, 60V, 60A, POWERPAKSO- RoHS: Compliant	0	1:$3.2000 10:$2.6600 100:$2.0600 500:$1.8100 1000:$1.5000 3000:$1.3900 6000:$1.3400 9000:$1.2900
SIR662DP-T1-GE3 DISTI # 2056694	Vishay Intertechnologies	MOSFET, N CH, DIO, 60V,100A, PPK SO8 RoHS: Compliant	0	1:£1.7100 10:£1.2800 100:£0.9730 250:£0.9120 500:£0.8500

Image	Part #	Description
	Mfr.#: SIR662DP-T1-GE3 OMO.#: OMO-SIR662DP-T1-GE3	MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET
	Mfr.#: SIR662DP-T1-GE3 OMO.#: OMO-SIR662DP-T1-GE3-VISHAY	IGBT Transistors MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET
	Mfr.#: SIR662DP OMO.#: OMO-SIR662DP-1190	New and Original
	Mfr.#: SIR662DP-T1-E3 OMO.#: OMO-SIR662DP-T1-E3-1190	New and Original
	Mfr.#: SIR662DP-T1-GE OMO.#: OMO-SIR662DP-T1-GE-1190	New and Original
	Mfr.#: SIR662DP-TI-GE3 OMO.#: OMO-SIR662DP-TI-GE3-1190	New and Original
	Mfr.#: SIR662DPT1GE3 OMO.#: OMO-SIR662DPT1GE3-1190	New and Original

SIR662DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes