PartNumber | SIR668ADP-T1-RE3 | SIR662DP-T1-GE3 | SIR664DP-T1-GE3 |
Description | MOSFET 100V Vds 20V Vgs PowerPAK SO-8 | MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET | MOSFET 60V Vds 20V Vgs PowerPAK SO-8 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | E | E |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK-SO-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 60 V | 60 V |
Id Continuous Drain Current | 93.6 A | 100 A | 60 A |
Rds On Drain Source Resistance | 4 mOhms | 2.2 mOhms | 6 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | 1 V | 1.3 V |
Vgs Gate Source Voltage | 20 V | 20 V | 10 V |
Qg Gate Charge | 54 nC | 96 nC | 26 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 104 W | 104 W | 50 W |
Configuration | Single | Single | Single |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
Packaging | Reel | Reel | Reel |
Series | SIR | SIR | SIR |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 10 ns | 11 ns | 7 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 18 ns | 11 ns | 12 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 36 ns | 33 ns | 24 ns |
Typical Turn On Delay Time | 21 ns | 14 ns | 10 ns |
Channel Mode | - | Enhancement | Enhancement |
Height | - | 1.04 mm | - |
Length | - | 6.15 mm | - |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Width | - | 5.15 mm | - |
Forward Transconductance Min | - | 82 S | 70 S |
Part # Aliases | - | SIR662DP-GE3 | - |
Unit Weight | - | 0.017870 oz | 0.017870 oz |