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SIR770DP-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
Vishay Siliconix
SiR770DP
Document Number: 66818
S10-1923-Rev. A, 23-Aug-10
www.vishay.com
1
Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Fixed Telecom
- Server
• Synchronous Converter
PRODUCT SUMMARY
V
DS
R
DS(on)
()I
D
(A)
a, f
Q
g
(Typ.)
Channel-1 30
0.021 at V
GS
= 10 V 8.0
6.6
0.025 at V
GS
= 4.5 V 8.0
Channel-2 30
0.021 at V
GS
= 10 V 8.0
6.6
0.025 at V
GS
= 4.5 V 8.0
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
V
SD
(V)
Diode Forward Voltage I
F
(A)
a
30 0.50 V at 1.0 A 4.0
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
6.15 mm
5.15 mm
Bottom View
PowerPAK SO-8
Ordering Information: SiR770DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
D
1
G
1
S
1
N-Channel MOSFET
D
2
G
2
S
2
Schottky Diode
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Package limited.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Channel-1 Channel-2 Unit
Drain-Source Voltage
V
DS
30 30
V
Gate-Source Voltage
V
GS
± 20 ± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
8
f
8
f
A
T
C
= 70 °C
8
f
8
f
T
A
= 25 °C
8
b, c, f
8
b, c, f
T
A
= 70 °C
8
b, c, f
8
b, c, f
Pulsed Drain Current (300 µs)
I
DM
35 35
Source-Drain Current Diode Current
T
C
= 25 °C
I
S
8
f
8
f
T
A
= 25 °C
3
b, c
3
b, c
Pulsed Source-Drain Current
I
SM
35 35
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
15 15
Single Pulse Avalanche Energy
E
AS
11.2 11.2
mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
17.8 17.8
W
T
C
= 70 °C
11.4 11.4
T
A
= 25 °C
3.6
b, c
3.6
b, c
T
A
= 70 °C
2.3
b, c
2.3
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
www.vishay.com
2
Document Number: 66818
S10-1923-Rev. A, 23-Aug-10
Vishay Siliconix
SiR770DP
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 80 °C/W.
c. Guaranteed by design, not subject to production testing.
d. Pulse test; pulse width 300 µs, duty cycle 2 %.
THERMAL RESISTANCE RATINGS
Parameter Symbol
Channel-1 Channel-2
Unit
Typ. Max. Typ. Max.
Maximum Junction-to-Ambient
a, b
t 10 s R
thJA
28 35 28 35
°C/W
Maximum Junction-to-Case (Drain) Steady State
R
thJC
5.5 7.0 5.5 7.0
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min.
Typ.
c
Max. Unit
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 µA Ch-1 30
V
V
GS
= 0 V, I
D
= 1 mA Ch-2 30
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= 250 µA Ch-1 34
mV/°C
V
GS(th)
Temperature Coefficient V
GS(th)
/T
J
I
D
= 250 µA Ch-1 - 5.5
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA Ch-1 1.2 2.8
V
V
DS
= V
GS
, I
D
= 250 µA Ch-2 1.2 2.8
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V Ch-1 100
nA
V
DS
= 0 V, V
GS
= ± 20 V Ch-2 100
Zero Gate Voltage Drain Current I
DSS
V
DS
= 30 V, V
GS
= 0 V Ch-1 0.001
mA
V
DS
= 30 V, V
GS
= 0 V Ch-2 0.015 0.1
V
DS
= 30 V, V
GS
= 0 V, T
J
= 100 °C Ch-1 0.025
V
DS
= 30 V, V
GS
= 0 V, T
J
= 100 °C Ch-2 1.2 15
On-State Drain Current
d
I
D(on)
V
DS
=5 V, V
GS
= 10 V Ch-1 10
A
V
DS
=5 V, V
GS
= 10 V Ch-2 10
Drain-Source On-State Resistance
d
R
DS(on)
V
GS
= 10 V, I
D
= 8 A Ch-1 0.0175 0.021
V
GS
= 10 V, I
D
= 8 A Ch-2 0.0175 0.021
V
GS
= 4.5 V, I
D
= 6 A Ch-1 0.0205 0.025
V
GS
= 4.5 V, I
D
= 6 A Ch-2 0.0205 0.025
Forward Transconductance
d
g
fs
V
DS
= 15 V, I
D
= 8 A Ch-1 31
S
V
DS
= 15 V, I
D
= 8 A Ch-2 31
Dynamic
c
Input Capacitance C
iss
Channel-1
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Channel-2
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Ch-1 900
pF
Ch-2 900
Output Capacitance C
oss
Ch-1 150
Ch-2 180
Reverse Transfer Capacitance C
rss
Ch-1 60
Ch-2 60
Document Number: 66818
S10-1923-Rev. A, 23-Aug-10
www.vishay.com
3
Vishay Siliconix
SiR770DP
Notes:
a. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min.
Typ.
a
Max. Unit
Dynamic
a
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
Ch-1 14 21
nC
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
Ch-2 14 21
Channel-1
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
Channel-2
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
Ch-1 6.6 10
Ch-2 6.6 10
Gate-Source Charge
Q
gs
Ch-1 2.5
Ch-2 2.5
Gate-Drain Charge
Q
gd
Ch-1 1.7
Ch-2 1.7
Gate Resistance
R
g
f = 1 MHz
Ch-1 0.3 1.4 2.8
Ch-2 0.3 1.4 2.8
Tu r n - On D el ay Ti m e
t
d(on)
Channel-1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Channel-2
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Ch-1 14 28
ns
Ch-2 14 28
Rise Time
t
r
Ch-1 10 20
Ch-2 10 20
Turn-Off Delay Time
t
d(off)
Ch-1 15 30
Ch-2 15 30
Fall Time
t
f
Ch-1 8 16
Ch-2 8 16
Tu r n - On D el ay Ti m e
t
d(on)
Channel-1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Channel-2
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Ch-1 10 20
Ch-2 10 20
Rise Time
t
r
Ch-1 8 16
Ch-2 8 16
Turn-Off Delay Time
t
d(off)
Ch-1 18 36
Ch-2 18 36
Fall Time
t
f
Ch-1 8 16
Ch-2 8 16
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
Ch-1 8
A
Ch-2 8
Pulse Diode Forward Current
a
I
SM
Ch-1 35
Ch-2 35
Body Diode Voltage
V
SD
I
S
= 2 A
Ch-1 0.75 1.1
V
I
S
= 1 A
Ch-2 0.45 0.50
Body Diode Reverse Recovery Time
t
rr
Channel-1
I
F
= 5 A, dI/dt = 100 A/µs, T
J
= 25 °C
Channel-2
I
F
= 5 A, dI/dt = 100 A/µs, T
J
= 25 °C
Ch-1 13 26
ns
Ch-2 13 26
Body Diode Reverse Recovery Charge
Q
rr
Ch-1 6.5 13
nC
Ch-2 4.5 9
Reverse Recovery Fall Time
t
a
Ch-1 8
ns
Ch-2 6
Reverse Recovery Rise Time
t
b
Ch-1 5
Ch-2 7
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

SIR770DP-T1-GE3

Mfr. #:
Buy SIR770DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
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