Document Number: 66818
S10-1923-Rev. A, 23-Aug-10
www.vishay.com
9
Vishay Siliconix
SiR770DP
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Reverse Current (Schottky)
0 0.2 0.4 0.6 0.8 1.0 1.2
1
0.01
0.001
0.1
10
100
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0 25 50 75 100 125 150
T
J
-Junction Temperature (°C)
-Reverse Current (A)I
R
V
DS
=30 V
V
DS
=10V
V
DS
=20V
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.02
0.04
0.06
0.08
0.10
0246810
I
D
=8A
T
J
= 25 °C
T
J
= 125 °C
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
0
14
28
42
56
70
101100.00.01
Time (s)
Power (W)
0.1
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
0.1
T
A
=25 °C
Single Pulse
1s
10 s
Limited by R
DS(on)
*
BVDSS Limited
1ms
10 ms
DC
100 ms
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
I
D
- Drain Current (A)
