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SIR770DP-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
www.vishay.com
4
Document Number: 66818
S10-1923-Rev. A, 23-Aug-10
Vishay Siliconix
SiR770DP
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
10
20
30
40
50
0 0.5 1.0 1.5 2.0 2.5
V
GS
=10Vthru4V
V
GS
=2V
V
GS
=3V
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
0.015
0.017
0.019
0.021
0.023
0.025
0 8 16 24 32 40
V
GS
=10V
V
GS
=4.5V
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
0
2
4
6
8
10
0 3 6 9 12 15
I
D
=10A
V
DS
=10V
V
DS
=15V
V
DS
=20V
Q
g
- Total Gate Charge (nC)
V
GS
- Gate-to-Source Voltage (V)
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
012345
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
C
rss
0
220
440
660
880
1100
0 5 10 15 20 25 30
C
iss
C
oss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.5
0.8
1.1
1.4
1.7
2.0
- 50 - 25 0 25 50 75 100 125 150
I
D
=8A
V
GS
=10V
V
GS
=4.5V
T
J
- Junction Temperature (°C)
(Normalized)
R
DS(on)
- On-Resistance
Document Number: 66818
S10-1923-Rev. A, 23-Aug-10
www.vishay.com
5
Vishay Siliconix
SiR770DP
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0 0.2 0.4 0.6 0.8 1.0 1.2
1
0.01
0.001
0.1
10
100
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
- 0.8
- 0.6
- 0.4
- 0.2
0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
=5mA
I
D
= 250 μA
V
GS(th)
Variance (V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.02
0.04
0.06
0.08
0.10
0246810
I
D
=8A
T
J
=25 °C
T
J
= 150 °C
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
0
14
28
42
56
70
101100.00.01
Time (s)
Power (W)
0.1
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
0.1
T
A
=25 °C
Single Pulse
1s
10 s
Limited by R
DS(on)
*
BVDSS Limited
1ms
10 ms
DC
100 ms
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
I
D
- Drain Current (A)
www.vishay.com
6
Document Number: 66818
S10-1923-Rev. A, 23-Aug-10
Vishay Siliconix
SiR770DP
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
5
10
15
20
25
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Package Limited
Power Derating, Junction-to-Case
Power Derating, Junction-to-Ambient
0
0.4
0.8
1.2
1.6
2.0
0 25 50 75 100 125 150
T
A
- Ambient Temperature (°C)
Power (W)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

SIR770DP-T1-GE3

Mfr. #:
Buy SIR770DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
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