IRGR4610DTRPBF Datasheet IRGS4610DTRRPBF, IRGR4610DPBF, IRGR4610DTRLPBF | P1-P3

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

V

CES

= 600V

I

C

= 10A, T

C

= 100°C

t

sc

> 5µs, T

jmax

= 175°C

V

CE(on) typ.

= 1.7V @ 6A

GCE

Gate Collector Emitter

E

G

n-channel

C

D

2

-Pak

IRGS4610DPbF

G

C

E

Applications

• Appliance Drives

• Inverters

• UPS

Features Benefits

Low V

CE(ON)

and switching losses

High efficiency in a wide range of applications and switching frequencies

Square RBSOA and maximum junction temperature 175°C

Improved reliability due to rugged hard switching performance and higher

power capability

Positive V

CE(ON)

temperature coefficient and tighter distribution of

parameters

Excellent current sharing in parallel operation

5μs short circuit SOA Enables short circuit protection scheme

Lead-free, RoHS compliant Environmentally friendly

→

D-Pak

IRGR4610DPbF

TO-220AB

IRGB4610DPbF

C

E

C

G

C

E

IRGR4610DPbF

IRGS4610DPbF

IRGB4610DPbF

Base part number Package Type Orderable Part Number

Form Quantity

Tube 75 IRGR4610DPbF

Tape and Reel 2000 IRGR4610DTRPbF

Tape and Reel Right 3000 IRGR4610DTRRPbF

Tape and Reel Left 3000 IRGR4610DTRLPbF

Tube 50 IRGS4610DPbF

Tape and Reel Right 800 IRGS4610DTRRPbF

Tape and Reel Left 800 IRGS4610DTRLPbF

IRGB4610DPbF TO-220AB Tube 50 IRGB4610DPbF

Standard Pack

D

2

PAK

D-PAK IRGR4610DPbF

IRGS4610DPbF

Absolute Maximum Ratings

Parameter Max. Units

V

CES

Collector-to-Emitter Breakdown Voltage V

I

C

@ T

C

= 25°C Continuous Collector Current

I

C

@ T

C

= 100°C Continuous Collector Current

I

CM

Pulsed Collector Current, V

GE

= 15V

I

LM

Clamped Inductive Load Current, V

GE

= 20V A

I

F

@ T

C

= 25°C Diode Continuous Forward Current

I

F

@ T

C

=100°C Diode Continuous Forward Current

I

FM

Diode Maximum Forward Current

Continuous Gate-to-Emitter Voltage V

Transient Gate-to-Emitter Voltage

P

D

@ T

C

=25° Maximum Power Dissipation W

P

D

@ T

C

=100° Maximum Power Dissipation

T

J

Operating Junction and

T

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Mounting Torque, 6-32 or M3 Screw TO-220

24

-40 to + 175

10lbf. In (1.1 N.m)

± 20

± 30

77

39

°C

300

V

GE

600

16

10

18

24

10

6

IRGR/S/B4610DPbF

Notes:

 V

CC

= 80% (V

CES

), V

GE

= 20V, L = 1.0mH, R

G

= 100Ω.

 R

θ

is measured at T

J

approximately 90°C.

 Refer to AN-1086 for guidelines for measuring V

(BR)CES

safely.

 Pulse width limited by max. junction temperature.

 Values influenced by parasitic L and C in measurement

 When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application

note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf

Thermal Resistance

Parameter Min. Typ. Max. Units

R

θ

JC

Thermal Resistance, Junction-to-Case -(IGBT)

––– ––– 1.9

R

θ

JC

Thermal Resistance, Junction-to-Case -(Diode)

––– ––– 6.3

R

θ

CS

Thermal Resistance, Case-to-Sink (flat, greased surface) (TO-220) ––– 0.5 –––

Thermal Resistance, Junction-to-Ambient (PCB mount) (D-PAK)

––– ––– 50

Thermal Resistance, Junction-to-Ambient (D-PAK)

––– ––– 110

Thermal Resistance, Junction-to-Ambient (PCB mount, Steady State)

(D

2

PAK)

––– ––– 40

Thermal Resistance, Junction-to-Ambient ( Socket mount) (TO-220)

––– ––– 62

R

θ

JA

°C/W

Electrical Characteristics @ T

J

= 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

Collector-to-Emitter Breakdown Voltage 600 — — V

V

GE

= 0V, I

c

=100 μA

Δ

V

(BR)CES

/

Δ

T

J

Temperature Coeff. of Breakdown Voltage — 0.36 — V/°C

V

GE

= 0V, I

c

= 250μA ( 25 -175

o

C )

—1.72.0 I

C

= 6.0A, V

GE

= 15V, T

J

= 25°C

V

CE(on)

Collector-to-Emitter Saturation Voltage — 2.07 — V I

C

= 6.0A, V

GE

= 15V, T

J

= 150°C

—2.14— I

C

= 6.0A, V

GE

= 15V, T

J

= 175°C

V

GE(th)

Gate Threshold Voltage 4.0 — 6.5 V V

CE

= V

GE

, I

C

= 150μA

Δ

V

GE(th)

/

Δ

TJ Threshold Voltage temp. coefficient —

-13

—mV/°C

V

CE

= V

GE

, I

C

= 250μA ( 25 -175

o

C )

gfe Forward Transconductance — 5.8 — S V

CE

= 25V, I

C

= 6.0A, PW =80μS

I

CES

——25μAV

GE

= 0V,V

CE

= 600V

——250

V

GE

= 0V, V

CE

= 600V, T

J

=175°C

V

FM

—1.602.30 VI

F

= 6.0A

—1.30— I

F

= 6.0A, T

J

= 175°C

I

GES

Gate-to-Emitter Leakage Current — — ±100 nA V

GE

= ± 20 V

Diode Forward Voltage Drop

Collector-to-Emitter Leakage Current

IRGR/S/B4610DPbF

Switching Characteristics @ T

J

= 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

Q

g

Total Gate Charge (turn-on) — 13 — I

C

= 6.0A

Q

ge

Gate-to-Emitter Charge (turn-on) — 3.0 — nC V

CC

= 400V

Q

gc

Gate-to-Collector Charge (turn-on) — 6.4 — V

GE

= 15V

E

on

Turn-On Switching Loss — 56 — I

C

= 6.0A, V

CC

= 400V, V

GE

= 15V

E

off

Turn-Off Switching Loss — 122 — μJR

G

= 47

Ω

, L=1mH, L

S

= 150nH, T

J

= 25°C

E

total

Total Switching Loss —

178

— Energy losses include tail and diode reverse recovery

t

d(on)

Turn-On delay time —

27

— I

C

= 6.0A, V

CC

= 400V

t

r

Rise time —

11

—nsR

G

= 47

Ω

, L=1mH, L

S

= 150nH

t

d(off)

Turn-Off delay time —

75

—T

J

= 25°C

t

f

Fall time —

17

—

E

on

Turn-On Switching Loss — 140 — I

C

= 6.0A, V

CC

= 400V, V

GE

= 15V

E

off

Turn-Off Switching Loss — 189 — μJ R

G

= 47

Ω

, L=1mH, L

S

= 150nH, T

J

= 175°C

E

total

Total Switching Loss —

329

— Energy losses include tail and diode reverse recovery

t

d(on)

Turn-On delay time —

26

— I

C

= 6.0A, V

CC

= 400V

t

r

Rise time —

12

—nsR

G

= 47

Ω

, L=1mH, L

S

= 150nH

t

d(off)

Turn-Off delay time —

95

—T

J

= 175°C

t

f

Fall time —

32

—

C

ies

Input Capacitance — 350 — V

GE

= 0V

C

oes

Output Capacitance — 29 — V

CC

= 30V

C

res

Reverse Transfer Capacitance — 10 — f = 1Mhz

T

J

= 175°C, I

C

= 24A

RBSOA Reverse Bias Safe Operating Area FULL SQUARE V

CC

= 500V, Vp =600V

R

G

= 100

Ω

, V

GE

= +20V to 0V

V

CC

= 400V, Vp =600V

R

G

= 100

Ω

, V

GE

= +15V to 0V

Erec Reverse recovery energy of the diode

—

178

—

μJ

T

J

= 175

o

C

trr

Diode Reverse recovery time

—

74

—

ns V

CC

= 400V, I

F

= 6.0A

Irr Peak Reverse Recovery Current — 12 — A V

GE

= 15V, Rg = 47

Ω

, L=1mH, L

S

=150nH

μs

pF

Conditions

—SCSOA Short Circuit Safe Operating Area —5

IRGR4610DTRPBF

IRGR4610DTRPBF

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