OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IRGR4610DTRPBF

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
IRGR/S/B4610DPbF
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014
Fig. 20 - Typical Diode Q
RR
V
CC
= 400V; V
GE
= 15V; T
J
= 175°C
Fig. 19- Typical Diode I
RR
vs. di
F
/dt
V
CC
= 400V; V
GE
= 15V;
I
CE
= 6.0A; T
J
= 175°C
Fig. 24 - Typical Gate Charge
vs. V
GE
I
CE
= 6.0A, L=600μH
Fig. 23- Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
Fig. 22- Typ. V
GE
vs. Short Circuit Time
V
CC
=400V, T
C
=25°C
Fig. 21 - Typical Diode E
RR
vs. I
F
T
J
= 175°C
0 100 200 300 400 500
V
CE
(V)
1
10
100
1000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
0 200 400 600 800 1000 1200
di
F
/dt (A/μs)
6
8
10
12
14
16
18
20
I
R
R
(
A
)
2 4 6 8 10 12 14
I
F
(A)
50
100
150
200
250
300
350
E
n
e
r
g
y
(
μ
J
)
R
G
=
10
Ω
R
G
= 22
Ω
R
G
= 47
Ω
R
G
= 100
Ω
8 1012141618
V
GE
(V)
0
5
10
15
20
T
i
m
e
(
μ
s
)
10
20
30
40
50
C
u
r
r
e
n
t
(
A
)
T
sc
I
sc
0 2 4 6 8 10 12 14
Q
G
, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
,
G
a
t
e
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
V
CES
= 400V
V
CES
= 300V
0 500 1000 1500
di
F
/dt (A/μs)
200
400
600
800
1000
1200
Q
R
R
(
n
C
)
10
Ω
22
Ω
100
Ω
47
Ω
6.0A
12A
3.0A
IRGR/S/B4610DPbF
8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci i/Ri
Ci= τi/Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
Ri (°C/W) τi (sec)
0.0415 0.000005
0.7262 0.000076
0.7721 0.000810
0.4016 0.004929
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci i/Ri
Ci= τi/Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
Ri (°C/W) τi (sec)
0.2195 0.000023
1.7733 0.000165
2.9352 0.001493
1.3704 0.013255
IRGR/S/B4610DPbF
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
1K
VCC
DUT
0
L
Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit
L
Rg
80 V
DUT
480V
+
-
Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - Typical Filter Circuit for
V
(BR)CES
Measurement
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

IRGR4610DTRPBF

Mfr. #:
Buy IRGR4610DTRPBF
Manufacturer:
Infineon / IR
Description:
IGBT Transistors 600V TRENCH IGBT ULTRAFAST
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet