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IRGR4610DTRPBF

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
IRGR/S/B4610DPbF
4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 4 - Reverse Bias SOA
T
J
= 175°C, V
GE
= 20V
Fig. 5 - Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80μs
Fig. 6 - Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80μs
Fig. 3 - Forward SOA,
T
C
= 25°C, T
J
≤ 175°C, V
GE
= 15V
0 2 4 6 8 10
V
CE
(V)
0
5
10
15
20
I
C
E
(
A
)
Top V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
Bottom V
GE
= 8.0V
0 2 4 6 8 10
V
CE
(V)
0
5
10
15
20
I
C
E
(
A
)
Top V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
Bottom V
GE
= 8.0V
25 50 75 100 125 150 175
T
C
(°C)
0
2
4
6
8
10
12
14
16
18
I
C
(
A
)
25 50 75 100 125 150 175
T
C
(°C)
0
10
20
30
40
50
60
70
80
P
t
o
t
(
W
)
10 100 1000
V
CE
(V)
0
1
10
100
I
C
A
)
1 10 100 1000
V
CE
(V)
0.1
1
10
100
I
C
(
A
)
10μsec
100μsec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
IRGR/S/B4610DPbF
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= -40°C
Fig. 7 - Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80μs
Fig. 10 - Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80μs
Fig. 12 - Typ. Transfer Characteristics
V
CE
= 50V; tp = 10μs
Fig. 11 - Typical V
CE
vs. V
GE
T
J
= 175°C
0.0 1.0 2.0 3.0
V
F
(V)
0
2
4
6
8
10
12
14
16
18
20
I
F
(
A
)
-40°C
25°C
175°C
5 101520
V
GE
(V)
0
2
4
6
8
10
V
C
E
(
V
)
I
CE
= 3.0A
I
CE
= 6.0A
I
CE
= 12A
5 101520
V
GE
(V)
0
2
4
6
8
10
V
C
E
(
V
)
I
CE
= 3.0A
I
CE
= 6.0A
I
CE
= 12A
5 101520
V
GE
(V)
0
2
4
6
8
10
V
C
E
(
V
)
I
CE
= 3.0A
I
CE
= 6.0A
I
CE
= 12A
0 2 4 6 8 10
V
CE
(V)
0
5
10
15
20
I
C
E
(
A
)
Top V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
Bottom V
GE
= 8.0V
4 6 8 10121416
V
GE,
Gate-to-Emitter Voltage
(V)
0
2
4
6
8
10
12
14
16
18
20
I
C
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
IRGR/S/B4610DPbF
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014
Fig. 13 - Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 1mH; V
CE
= 400V, R
G
= 47Ω; V
GE
= 15V.
Fig. 15 - Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 1mH; V
CE
= 400V, I
CE
= 6.0A; V
GE
= 15V
Fig. 14 - Typ. Switching Time vs. I
C
T
J
= 175°C; L=1mH; V
CE
= 400V
R
G
= 47Ω; V
GE
= 15V
Fig. 16- Typ. Switching Time vs. R
G
T
J
= 175°C; L=1mH; V
CE
= 400V
I
CE
= 6.0A; V
GE
= 15V
Fig. 17 - Typical Diode I
RR
vs. I
F
T
J
= 175°C
Fig. 18 - Typical Diode I
RR
vs. R
G
T
J
= 175°C; I
F
= 6.0A
02468101214
I
C
(A)
50
100
150
200
250
300
350
400
E
n
e
r
g
y
(
μ
J
)
E
OFF
E
ON
2 4 6 8 10 12 14
I
C
(A)
1
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
0 25 50 75 100 125
Rg (Ω)
60
80
100
120
140
160
180
200
220
E
n
e
r
g
y
(
μ
J
)
E
OFF
E
ON
0 25 50 75 100 125
R
G
(Ω)
1
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
2 4 6 8 10 12 14
I
F
(A)
0
5
10
15
20
25
30
I
R
R
(
A
)
R
G =
10Ω
R
G =
22Ω
R
G =
47Ω
R
G =
100Ω
0 25 50 75 100 125
R
G
(Ω)
6
8
10
12
14
16
18
20
22
I
R
R
(
A
)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

IRGR4610DTRPBF

Mfr. #:
Buy IRGR4610DTRPBF
Manufacturer:
Infineon / IR
Description:
IGBT Transistors 600V TRENCH IGBT ULTRAFAST
Lifecycle:
New from this manufacturer.
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