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ATF-511P8-TR1

P1-P3P4-P6P7-P9P10-P12P13-P15
4
Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions
The device’s optimum OIP3 and P1dB measurements were determined using a load pull system at 4.5V, 200 mA quiesent bias:
Figure 7. Simpli ed schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate
supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown.
RF Input
1.2 pF
1.2 pF
2.7 nH1.8 nH
RF Output
50 Ohm
.02 λ
110 Ohm
.03 λ
110 Ohm
.03 λ
50 Ohm
.02 λ
DUT
15 nH
15 Ohm
2.2 μF
Gate
DC Supply
47 nH
2.2 μF
Drain
DC Supply
Optimum OIP3
Freq Gamma Source Gamma Load OIP3 Gain P1dB PAE
(GHz) Mag Ang Mag Ang (dBm) (dB) (dBm) (%)
0.9 0.776 152 0.549 -178 43.3 17.94 29.63 63.8
2.0 0.872 -171 0.683 -179 43.1 15.06 30.12 66.8
2.4 0.893 -162 0.715 -174 42.8 14.03 29.90 64.5
3.9 0.765 -132 0.574 -144 41.7 9.47 29.02 52
Optimum P1dB
Freq Gamma Source Gamma Load OIP3 Gain P1dB PAE
(GHz) Mag Ang Mag Ang (dBm) (dB) (dBm) (%)
0.9 0.773 153 0.784 -173 38.0 19.28 31.9 54.23
2.0 0.691 147 0.841 -166 36.4 10.34 31.4 38.15
2.4 0.797 164 0.827 -166 36.2 8.43 31.2 37.38
3.9 0.602 -163 0.794 -155 35.4 7.03 31 32.72
5
ATF-511P8 Typical Performance Curves (at 25°C unless speci ed otherwise)
Tuned for Optimal OIP3 at 4.5V 200 mA
Note:
Bias current for the above charts are quiescent conditions. Actual level
may increase or decrease depending on amount of RF drive.
I
DS
(mA)
Figure 8. OIP3 vs. I
DS
and V
DS
at 2 GHz.
OIP3 (dBm)
50
50
45
40
35
30
25
20
15
10
550150 350 450250
4.5 V
4 V
3 V
I
DS
(mA)
Figure 9. OIP3 vs. I
DS
and V
DS
at 900 MHz.
OIP3 (dBm)
50
50
45
40
35
30
25
20
15
10
550150 350 450250
4.5 V
4 V
3 V
I
DS
(mA)
Figure 10. P1dB vs. I
DS
and V
DS
at 2 GHz.
P1dB (dBm)
50
35
30
25
20
15
10
550150 350 450250
4.5 V
4 V
3 V
I
DS
(mA)
Figure 11. P1dB vs. I
DS
and V
DS
at 900 MHz.
P1dB (dBm)
50
35
30
25
20
15
10
550150 350 450250
4.5 V
4 V
3 V
I
DS
(mA)
Figure 12. Gain vs. I
DS
and V
DS
at 2 GHz.
GAIN (dB)
50
17
16
15
14
13
12
11
10
550150 350 450250
4.5 V
4 V
3 V
I
DS
(mA)
Figure 13. Gain vs. I
DS
and V
DS
at 900 MHz.
GAIN (dB)
50
20
19
18
17
16
15
14
13
550150 350 450250
4.5 V
4 V
3 V
I
DS
(mA)
Figure 14. PAE vs. I
DS
and V
DS
at 2 GHz.
PAE (%)
50
80
70
60
50
40
30
20
10
0
550150 350 450250
4.5 V
4 V
3 V
I
DS
(mA)
Figure 15. PAE vs. I
DS
and V
DS
at 900 MHz.
PAE (%)
50
80
70
60
50
40
30
20
10
0
550150 350 450250
4.5 V
4 V
3 V
FREQUENCY (GHz)
Figure 16. OIP3 vs. Temp and Freq.
OIP3 (dBm)
0.5
50
45
40
35
30
25
20
41 2 2.51.5
3 3.5
-40 C
25 C
85 C
6
ATF-511P8 Typical Performance Curves, continued (at 25°C unless speci ed otherwise)
Tuned for Optimal OIP3 at 4.5V, 200 mA
Note:
Bias current for the above charts are quiescent conditions. Actual level
may increase or decrease depending on amount of RF drive.
FREQUENCY (GHz)
Figure 17. P1dB vs. Temp and Freq.
P1dB (dBm)
0.5
35
30
25
20
15
10
41 2 2.51.5
3 3.5
FREQUENCY (GHz)
Figure 18. Gain vs. Temp and Freq.
GAIN (dB)
0.5
20
15
10
5
0
41 2 2.51.5
3 3.5
FREQUENCY (GHz)
Figure 19. PAE vs. Temp and Freq.
PAE (%)
0.5
80
70
60
50
40
30
20
10
0
41 2 2.51.5
3 3.5
-40 C
25 C
85 C
-40 C
25 C
85 C
-40 C
25 C
85 C
I
DS
(mA)
Figure 20. OIP3 vs. I
DS
and V
DS
at 2 GHz.
OIP3 (dBm)
50
50
45
40
35
30
25
20
15
10
550150 350 450250
4.5 V
4 V
3 V
I
DS
(mA)
Figure 21. OIP3 vs. I
DS
and V
DS
at 900 MHz.
OIP3 (dBm)
50
50
45
40
35
30
25
20
15
10
550150 350 450250
4.5 V
4 V
3 V
I
DS
(mA)
Figure 22. P1dB vs. I
DS
and V
DS
at 2 GHz.
P1dB (dBm)
50
35
30
25
20
15
10
550150 350 450250
4.5 V
4 V
3 V
I
DS
(mA)
Figure 23. P1dB vs. I
DS
and V
DS
at 900 MHz.
P1dB (dBm)
50
35
30
25
20
15
10
550150 350 450250
4.5 V
4 V
3 V
I
DS
(mA)
Figure 24. Gain vs. I
DS
and V
DS
at 2 GHz.
GAIN (dB)
50
12
10
8
6
4
2
0
550150 350 450250
4.5 V
4 V
3 V
I
DS
(mA)
Figure 25. Gain vs. I
DS
and V
DS
at 900 MHz.
GAIN (dB)
50
22
20
18
16
14
12
10
550150 350 450250
4.5 V
4 V
3 V
ATF-511P8 Typical Performance Curves (at 25°C unless speci ed otherwise)
Tuned for Optimal P1dB at 4.5 V, 200 mA
P1-P3P4-P6P7-P9P10-P12P13-P15

ATF-511P8-TR1

Mfr. #:
Buy ATF-511P8-TR1
Manufacturer:
Broadcom / Avago
Description:
RF JFET Transistors Transistor GaAs High Linearity
Lifecycle:
New from this manufacturer.
Delivery:
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