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ATF-511P8-TR1

P1-P3P4-P6P7-P9P10-P12P13-P15
7
ATF-511P8 Typical Performance Curves, continued (at 25°C unless speci ed otherwise)
Tuned for Optimal P1dB at 4.5V, 200 mA
Note:
Bias current for the above charts are quiescent conditions. Actual level
may increase or decrease depending on amount of RF drive.
I
DS
(mA)
Figure 26. PAE vs. I
DS
and V
DS
at 2 GHz.
PAE (%)
50
50
40
30
20
10
0
550150 350 450250
4.5 V
4 V
3 V
I
DS
(mA)
Figure 27. PAE vs. I
DS
and V
DS
at 900 MHz.
PAE (%)
50
70
60
50
40
30
20
10
550150 350 450250
4.5 V
4 V
3 V
FREQUENCY (GHz)
Figure 28. OIP3 vs. Temp and Freq.
OIP3 (dBm)
0.5
45
40
35
30
25
20
41 2 2.51.5
3 3.5
FREQUENCY (GHz)
Figure 29. P1dB vs. Temp and Freq.
P1dB (dBm)
0.5
40
35
30
25
20
15
10
41 2 2.51.5
3 3.5
FREQUENCY (GHz)
Figure 30. Gain vs. Temp and Freq.
GAIN (dB)
0.5
20
15
10
5
0
41 2 2.51.5
3 3.5
FREQUENCY (GHz)
Figure 31. PAE vs. Temp and Freq.
PAE (%)
0.5
70
60
50
40
30
20
10
0
41 2 2.51.5
3 3.5
-40 C
25 C
85 C
-40 C
25 C
85 C
-40 C
25 C
85 C
-40 C
25 C
85 C
8
Notes:
1. S parameter is measured on a microstrip
line made on 0.025 inch thick alumina
carrier. The input reference plane is at the
end of the gate lead. The output reference
plane is at the end of the drain lead.
Figure 32. MSG/MAG & |S21|
2
(dB) @
4.5V, 300 mA.
FREQUENCY (GHz)
40
30
20
10
0
-10
-20
0 5 10 15 20
MSG/MAG & |S21|
2
(dB)
S21
MAG
MSG
ATF-511P8 Typical Scattering Parameters, V
DS
= 4.5V, I
DS
= 300 mA
Freq. S
11
S
21
S
12
S
22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.1 0.94 -134.9 31.16 36.15 111.2 -38.53 0.01 29.7 0.73 -164.5 34.79
0.2 0.93 -157.7 25.64 19.14 99.2 -37.87 0.01 21.8 0.76 -173.7 31.68
0.3 0.93 -166.6 22.26 12.97 94.2 -37.61 0.01 21.1 0.78 -176.8 29.99
0.4 0.93 -171.8 19.78 9.74 90.9 -37.09 0.01 23.4 0.78 -179.9 28.43
0.5 0.92 -173.9 18.70 8.60 88.9 -36.15 0.01 25.4 0.75 178.9 27.31
0.6 0.93 -176.9 17.12 7.18 86.1 -35.80 0.01 27.0 0.75 176.9 26.52
0.7 0.92 -178.8 15.78 6.15 84.3 -35.41 0.01 29.5 0.75 175.5 25.59
0.8 0.93 178.7 14.61 5.37 82.3 -35.11 0.01 32.5 0.76 174.0 24.75
0.9 0.92 177.1 13.58 4.77 80.6 -35.00 0.01 33.1 0.75 172.8 24.24
1 0.93 175.7 12.64 4.28 79.1 -34.46 0.01 35.0 0.76 171.6 23.53
1.5 0.93 168.7 8.99 2.81 71.4 -32.70 0.02 40.0 0.76 166.0 20.88
2 0.93 163.0 6.36 2.08 64.2 -31.27 0.02 42.3 0.76 160.6 17.20
2.5 0.92 157.8 4.40 1.66 57.2 -29.90 0.03 42.5 0.76 155.5 14.71
3 0.92 152.5 2.73 1.36 50.4 -28.59 0.03 41.6 0.75 149.7 12.65
4 0.92 142.8 0.03 1.00 37.6 -26.69 0.04 35.7 0.74 138.6 9.96
5 0.91 133.2 -2.17 0.77 24.2 -25.30 0.05 29.8 0.71 127.2 7.23
6 0.91 124.6 -4.21 0.61 14.1 -24.32 0.06 23.7 0.65 117.2 4.97
7 0.91 115.7 -5.80 0.51 5.6 -23.48 0.06 19.5 0.59 111.3 3.02
8 0.91 106.0 -6.82 0.45 -2.6 -22.49 0.07 14.1 0.56 108.2 1.86
9 0.91 95.5 -7.36 0.42 -10.2 -21.39 0.08 8.5 0.58 103.7 1.19
10 0.90 85.2 -7.98 0.40 -22.2 -20.50 0.09 0.4 0.60 96.0 0.53
11 0.89 74.3 -8.69 0.38 -29.1 -19.72 0.10 -8.4 0.63 87.2 -0.04
12 0.89 63.0 -9.25 0.35 -40.1 -19.42 0.10 -17.1 0.65 77.6 -0.61
13 0.89 54.1 -9.80 0.32 -51.7 -19.12 0.11 -23.9 0.67 68.2 -1.04
14 0.90 46.3 -10.25 0.31 -55.2 -18.65 0.11 -29.7 0.69 58.7 -1.13
15 0.90 40.6 -10.86 0.30 -57.3 -18.57 0.11 -35.8 0.69 50.1 -1.88
16 0.89 33.3 -11.16 0.32 -71.1 -18.02 0.12 -42.3 0.71 41.8 -2.26
17 0.83 25.4 -11.81 0.24 -75.3 -17.65 0.13 -47.1 0.73 35.1 -3.17
18 0.86 20.0 -12.07 0.24 -90.5 -17.43 0.13 -53.1 0.76 27.7 -3.76
9
Figure 33. MSG/MAG & |S21|
2
(dB) @
4.5V, 200 mA.
FREQUENCY (GHz)
40
30
20
10
0
-10
-20
0 5 10 15 20
MSG/MAG & |S21|
2
(dB)
S21
MAG
MSG
ATF-511P8 Typical Scattering Parameters, V
DS
= 4.5V, I
DS
= 200 mA
Freq. S
11
S
21
S
12
S
22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.1 0.94 -132.6 31.26 36.54 112.1 -37.40 0.01 27.2 0.70 -161.0 34.49
0.2 0.93 -156.3 25.79 19.47 99.6 -36.68 0.01 19.2 0.74 -171.6 31.13
0.3 0.94 -165.6 22.40 13.18 94.4 -36.47 0.01 19.9 0.76 -175.6 29.44
0.4 0.93 -170.8 19.93 9.92 91.1 -36.17 0.01 19.9 0.76 -178.8 27.93
0.5 0.92 -173.1 18.84 8.75 89.0 -35.11 0.01 24.6 0.73 179.9 26.87
0.6 0.92 -176.2 17.26 7.29 86.2 -34.84 0.01 23.9 0.73 177.8 26.08
0.7 0.92 -178.2 15.92 6.25 84.3 -34.72 0.01 25.6 0.73 176.2 25.41
0.8 0.92 179.4 14.76 5.47 82.3 -34.37 0.01 27.6 0.74 174.7 24.59
0.9 0.93 177.4 13.72 4.85 80.4 -34.02 0.02 28.6 0.74 173.4 23.85
1 0.92 176.0 12.77 4.34 79.1 -33.71 0.02 30.8 0.74 172.2 23.16
1.5 0.93 168.9 9.13 2.86 70.9 -32.20 0.02 35.0 0.74 166.5 20.59
2 0.93 163.6 6.49 2.11 63.7 -30.97 0.02 38.2 0.74 161.1 17.50
2.5 0.92 157.9 4.50 1.67 56.8 -29.65 0.03 39.1 0.74 155.9 14.78
3 0.93 152.6 2.81 1.38 49.3 -28.54 0.03 38.1 0.74 150.2 13.16
4 0.91 143.1 0.16 1.01 35.8 -26.68 0.04 33.9 0.73 139.0 9.84
5 0.91 133.7 -2.08 0.78 22.7 -25.40 0.05 28.0 0.70 127.4 7.34
6 0.91 124.7 -4.02 0.62 12.0 -24.42 0.06 22.3 0.65 117.0 5.01
7 0.90 115.7 -5.75 0.51 3.3 -23.61 0.06 18.2 0.58 110.2 2.77
8 0.90 105.6 -6.77 0.45 -3.9 -22.73 0.07 14.4 0.54 107.5 1.56
9 0.91 95.7 -7.45 0.42 -12.1 -21.60 0.08 8.4 0.55 103.9 1.13
10 0.91 84.9 -7.95 0.40 -22.4 -20.76 0.09 0.9 0.58 97.0 0.82
11 0.89 74.0 -8.29 0.38 -32.0 -19.93 0.10 -8.6 0.61 88.4 -0.05
12 0.89 63.1 -9.19 0.34 -39.5 -19.45 0.10 -16.8 0.64 78.9 -0.82
13 0.89 54.0 -9.74 0.326 -51.1 -19.03 0.11 -24.1 0.67 69.1 -1.38
14 0.90 46.4 -10.17 0.31 -58.1 -18.78 0.11 -30.7 0.68 59.6 -1.33
15 0.90 38.8 -10.85 0.28 -67.8 -18.47 0.11 -36.1 0.68 50.9 -1.80
16 0.91 33.1 -10.77 0.28 -73.7 -18.19 0.12 -42.9 0.71 42.0 -2.11
17 0.85 26.8 -11.05 0.28 -83.3 -17.88 0.12 -47.5 0.73 35.3 -2.60
18 0.87 19.3 -11.53 0.26 -100.4 -17.54 0.13 -53.8 0.75 27.3 -2.83
Notes:
1. S parameter is measured on a microstrip
line made on 0.025 inch thick alumina
carrier. The input reference plane is at the
end of the gate lead. The output reference
plane is at the end of the drain lead.
P1-P3P4-P6P7-P9P10-P12P13-P15

ATF-511P8-TR1

Mfr. #:
Buy ATF-511P8-TR1
Manufacturer:
Broadcom / Avago
Description:
RF JFET Transistors Transistor GaAs High Linearity
Lifecycle:
New from this manufacturer.
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