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HEF4526BT,653

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
HEF4526B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 22 November 2011 7 of 19
NXP Semiconductors
HEF4526B
Programmable 4-bit binary down counter
7. Limiting values
[1] For DIP16 package: P
tot
derates linearly with 12 mW/K above 70 C.
[2] For SO16 package: P
tot
derates linearly with 8 mW/K above 70 C.
8. Recommended operating conditions
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DD
supply voltage 0.5 +18 V
I
IK
input clamping current V
I
< 0.5 V or V
I
>V
DD
+ 0.5 V - 10 mA
V
I
input voltage 0.5 V
DD
+ 0.5 V
I
OK
output clamping current V
O
< 0.5 V or V
O
>V
DD
+ 0.5 V - 10 mA
I
I/O
input/output current - 10 mA
I
DD
supply current to any supply terminal - 100 mA
T
stg
storage temperature 65 +150 C
T
amb
ambient temperature 40 +85 C
P
tot
total power dissipation DIP16 package
[1]
- 750 mW
SO16 package
[2]
- 500 mW
P power dissipation per output - 100 mW
Table 7. Recommended operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
DD
supply voltage 3 - 15 V
V
I
input voltage 0 - V
DD
V
T
amb
ambient temperature in free air 40 - +85 C
t/V input transition rise and fall rate V
CC
= 5 V - - 3.75 s/V
V
CC
= 10 V - - 0.5 s/V
V
CC
= 15 V - - 0.08 s/V
HEF4526B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 22 November 2011 8 of 19
NXP Semiconductors
HEF4526B
Programmable 4-bit binary down counter
9. Static characteristics
Table 8. Static characteristics
V
SS
= 0 V; V
I
= V
SS
or V
DD
unless otherwise specified.
Symbol Parameter Conditions V
DD
T
amb
= 40 C T
amb
= 25 C T
amb
= 85 C Unit
Min Max Min Max Min Max
V
IH
HIGH-level input voltage I
O
< 1 A 5 V 3.5-3.5-3.5-V
10 V 7.0-7.0-7.0-V
15 V 11.0 - 11.0 - 11.0 - V
V
IL
LOW-level input voltage I
O
< 1 A 5 V - 1.5 - 1.5 - 1.5 V
10 V - 3.0 - 3.0 - 3.0 V
15 V - 4.0 - 4.0 - 4.0 V
V
OH
HIGH-level output voltage I
O
< 1 A 5 V 4.95 - 4.95 - 4.95 - V
10 V 9.95 - 9.95 - 9.95 - V
15 V 14.95 - 14.95 - 14.95 - V
V
OL
LOW-level output voltage I
O
< 1 A 5 V - 0.05 - 0.05 - 0.05 V
10 V - 0.05 - 0.05 - 0.05 V
15 V - 0.05 - 0.05 - 0.05 V
I
OL
LOW-level output current V
O
= 0.4 V 5 V 0.52 - 0.44 - 0.36 - mA
V
O
= 0.5 V 10 V 1.3 - 1.1 - 0.9 - mA
V
O
= 1.5 V 15 V 3.6 - 3.0 - 2.4 - mA
I
OH
HIGH-level output current V
O
= 2.5 V 5 V - 1.7 - 1.4 - 1.1 mA
V
O
= 4.6 V 5 V - 0.52 - 0.44 - 0.36 mA
V
O
= 9.5 V 10 V - 1.3 - 1.1 - 0.9 mA
V
O
= 13.5 V 15 V - 3.6 - 3.0 - 2.4 mA
I
I
input leakage current 15 V - 0.3 - 0.3 - 1.0 A
I
DD
supply current I
O
= 0 A 5 V - 20 - 20 - 150 A
10 V - 40 - 40 - 300 A
15 V - 80 - 80 - 600 A
C
I
input capacitance - - - - 7.5 - - pF
HEF4526B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 22 November 2011 9 of 19
NXP Semiconductors
HEF4526B
Programmable 4-bit binary down counter
10. Dynamic characteristics
Table 9. Dynamic characteristics
V
SS
= 0 V; T
amb
= 25
C; for test circuit see Figure 7; unless otherwise specified.
Symbol Parameter Conditions V
DD
Extrapolation formula Min Typ Max Unit
t
PHL
HIGH to LOW
propagation delay
CP0, CP1 to Qn;
see Figure 6
5 V
[1]
123 ns + (0.55 ns/pF)C
L
- 150 300 ns
10 V 54 ns + (0.23 ns/pF)C
L
- 65 130 ns
15 V 42 ns + (0.16 ns/pF)C
L
- 50 100 ns
CP0, CP
1 to TC;
see Figure 6
5 V 183 ns + (0.55 ns/pF)C
L
- 210 420 ns
10 V 79 ns + (0.23 ns/pF)C
L
- 90 180 ns
15 V 62 ns + (0.16 ns/pF)C
L
- 70 140 ns
PL to Qn;
see Figure 6
5 V 173 ns + (0.55 ns/pF)C
L
- 200 400 ns
10 V 69 ns + (0.23 ns/pF)C
L
- 80 160 ns
15 V 52 ns + (0.16 ns/pF)C
L
- 60 120 ns
MR to Qn 5 V 113 ns + (0.55 ns/pF)C
L
- 140 280 ns
10 V 44 ns + (0.23 ns/pF)C
L
- 55 110 ns
15 V 32 ns + (0.16 ns/pF)C
L
- 4080ns
t
PLH
LOW to HIGH
propagation delay
CP0, CP1 to Qn;
see Figure 6
5 V
[1]
123 ns + (0.55 ns/pF)C
L
- 150 300 ns
10 V 54 ns + (0.23 ns/pF)C
L
- 65 130 ns
15 V 42 ns + (0.16 ns/pF)C
L
- 50 100 ns
CP0, CP
1 to TC;
see Figure 6
5 V 183 ns + (0.55 ns/pF)C
L
- 210 420 ns
10 V 79 ns + (0.23 ns/pF)C
L
- 90 180 ns
15 V 62 ns + (0.16 ns/pF)C
L
- 70 140 ns
PL to Qn;
see Figure 6
5 V 153 ns + (0.55 ns/pF)C
L
- 180 360 ns
10 V 59 ns + (0.23 ns/pF)C
L
- 70 140 ns
15 V 42 ns + (0.16 ns/pF)C
L
- 50 100 ns
t
t
transition time see Figure 6 5 V
[1]
10 ns + (1.00 ns/pF)C
L
- 60 120 ns
10 V 9 ns + (0.42 ns/pF)C
L
- 3060ns
15 V 6 ns + (0.28 ns/pF)C
L
- 2040ns
t
su
set-up time An to PL;
see Figure 6
5 V 30 0 - ns
10 V 20 0 - ns
15 V 15 0 - ns
t
h
hold time An to PL;
see Figure 6
5 V 30 5 - ns
10 V 20 5 - ns
15 V 15 5 - ns
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HEF4526BT,653

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Buy HEF4526BT,653
Manufacturer:
NXP Semiconductors
Description:
Counter ICs PROGRMMABL 4-BIT BCD
Lifecycle:
New from this manufacturer.
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