Maximum rating STPIC6C595
4/22
2 Maximum rating
Stressing the device above the rating listed in the “absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
2.1 Absolute maximum ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CC
Logic supply voltage (See Note 1)7V
V
I
Logic input voltage range -0.3 to 7 V
V
DS
Power DMOS drain to source voltage (See Note 2)33V
I
DS
Continuous source to drain diode anode current 250 mA
I
DS
Pulsed source to drain diode anode current
(See Note 3)
500 mA
I
D
Pulsed drain current, each output, all output ON
(T
C
= 25 °C)
250 mA
I
D
Continuous current, each output, all output ON
(T
C
= 25 °C)
100 mA
I
D
Peak drain current single output
(T
C
= 25 °C) (See Note 3)
250 mA
E
AS
Single pulse avalanche energy
(See Figure 11 and Figure 12)
30 mJ
I
AS
Avalanche current (See Note 4 and Figure 17)200mA
P
d
Continuous total dissipation (T
C
25 °C)
1087 mW
P
d
Continuous total dissipation (T
C
= 125 °C)
217 mW
T
J
Operating virtual junction temperature range -40 to +150 °C
T
C
Operating case temperature range -40 to +125 °C
T
stg
Storage temperature range -65 to +150 °C
T
L
Lead temperature 1.6 mm (1/16 inch) from case for 10
seconds
260 °C
STPIC6C595 Maximum rating
5/22
2.2 Thermal data
2.3 Recommended operating conditions
Table 3. Thermal data
Symbol Parameter Value Unit
R
th(JA)
Thermal resistance junction-ambient 115 °C/W
Table 4. Recommended operating conditions
Symbol Parameter Min Typ Max Unit
V
CC
Logic supply voltage 4.5 5.5 V
V
IH
High level input voltage
0.85V
CC
V
CC
V
V
IL
Low level input voltage 0
0.15V
CC
V
I
DP
Pulse drain output current
(T
C
= 25 °C, V
CC
= 5 V, all outputs ON)
(see Note 3, Note 5 and Figure 15)
250 mA
t
su
Set-up time, SER IN high before SRCK
(see Figure 4 and Figure 8)
1.6 3.0 5.7 ns
t
hL
Hold time, SER IN high before G
(see Figure 4, Figure 7, Figure 8)
2.8 4.0 9.6 ns
t
W
Pulse duration (see Figure 8)40ns
T
C
Operating case temperature -40 125 °C
Electrical characteristics STPIC6C595
6/22
3 Electrical characteristics
3.1 DC characteristics
Table 5. DC characteristics (V
CC
= 5 V, T
C
= 25 °C, unless otherwise specified.)
Symbol Parameter Test conditions Min Typ Max Unit
V
(BR)DSX
Drain-to-source
breakdown voltage
I
D
= 1 mA
33 37 V
V
SD
Source-to-drain diode
forward voltage
I
F
= 100 mA
0.85 1.2 V
V
OH
High level output
voltage SER OUT
I
OH
= -20 μA, V
CC
= 4.5 V
4.4 4.49 V
I
OH
= -4 mA, V
CC
= 4.5 V
44.2 V
V
OL
Low level output
voltage SER OUT
I
OH
= 20 μA, V
CC
= 4.5 V
0.005 0.1 V
I
OH
= 4 mA, V
CC
= 4.5 V
0.3 0.5 V
I
IH
High level input current
V
CC
= 5.5 V, V
I
= V
CC
1 μA
I
IL
Low level input current
V
CC
= 5.5 V, V
I
= 0
-1 μA
I
CC
Logic supply current
V
CC
= 5.5 V, all outputs OFF or
ON
20 200 μA
I
CC(FRQ)
Logic supply current at
frequency
f
SRCK
= 5 MHz, C
L
= 30 pF
All outputs OFF
(See Figure 6, Figure 18 and
Figure 19)
0.2 2 mA
I
N
Nominal current
V
DS(on)
= 0.5 VI
N
= I
D
T
C
= 85 °C
(See Note 5, Note 6, Note 7)
90 mA
I
DSX
Off-state drain current
V
DS
= 30 V, V
CC
= 5.5 V
0.3 5 μA
V
DS
= 30 V, V
CC
=5.5 V or 0 V
T
C
= 125 °C
0.6 8 μA
R
DS(on)
Static drain source on
state resistance
(See Note 5, Note 6
and Figure 14,
Figure 16)
I
D
= 50 mA, V
CC
= 4.5 V
4.5 6 Ω
I
D
= 50 mA, V
CC
= 4.5 V
T
C
= 125 °C
6.5 9 Ω
I
D
= 100 mA, V
CC
= 4.5 V
4.5 6 Ω

STPIC6C595MTR

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Counter Shift Registers 8-Bit Shift Register
Lifecycle:
New from this manufacturer.
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