STPIC6C595 Electrical characteristics
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3.2 Switching characteristics
Note: 1 All voltage value are with respect to GND
2 Each power DMOS source is internally connected to GND
3 Pulse duration
≤
100
μ
s and duty cycle
≤
2 %
4 Drain supply voltage = 15 V, starting junction temperature (T
JS
) = 25 °C. L = 1.5 H and
I
AS
= 200 mA (see Fig. 11 and 12)
5 Technique should limit T
J
- T
C
to 10 °C maximum
6 These parameters are measured with voltage sensing contacts separate from the current-
carrying contacts.
7 Nominal current is defined for a consistent comparison between devices from different
sources. It is the current that produces a voltage drop of 0.5 V at T
C
= 85 °C.
Table 6. Switching characteristics (V
CC
= 5 V, T
C
= 25 °C, unless otherwise specified.)
Symbol Parameter Test conditions Min Typ Max Unit
t
PHL
Propagation delay
time, high to low level
output from G
C
L
= 30 pF, I
D
= 75 mA
(See Figure 4, Figure 5,
Figure 6, Figure 7, Figure 20)
80 ns
t
PLH
Propagation delay
time, low to high level
output from G
130 ns
t
r
Rise time, drain output 60 ns
t
f
Fall time, drain output 50 ns
t
pd
propagation delay time 20 ns
t
a
Reverse recovery
current rise time
I
F
= 100 mA, di/dt = 10 A/μs
(See Figure 5, Figure 6, and
Figure 9, Figure 10 )
39 ns
t
rr
Reverse recovery time 115 ns
