© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 1
1 Publication Order Number:
NCN4555/D
NCN4555
1.8V / 3V SIM Card Power
Supply and Level Shifter
The NCN4555 is a level shifter analog circuit designed to translate
the voltages between a SIM Card and an external microcontroller or
MPU. A built−in LDO−type DC−DC converter makes the NCN4555
useable to drive 1.8 V and 3.0 V SIM card. The device fulfills the
ISO7816−3 smart card interface standard as well as GSM 11.11 and
related (11.12 and 11.18) and 3G mobile requirements (IMT−2000/3G
TS 31.101). With the STOP pin a low current shutdown mode can be
activated making the battery life longer. The Card power supply
voltage (SIM_V
CC
) is selected using a single pin (MOD_V
CC
).
Features
Supports 1.8 V or 3.0 V Operating SIM Card
The LDO is able to Supply More than 50 mA under 1.8 V and 3.0 V
Built−in Pullup Resistor for I/O Pin in Both Directions
All Pins are Fully ESD Protected According to ISO−7816
Specifications – ESD Protection on SIM Pins in Excess of 7 kV
(Human Body Model)
Supports up to More than 5 MHz Clock
Low−Profile 3x3 QFN−16 Package
Pb−Free Packages are Available*
Typical Applications
SIM Card Interface Circuit for 2G, 2.5G and 3G Mobile Phones
Identification Module
Smart Card Readers
Wireless PC Cards
Figure 1. Typical Interface Application
RST
CLK
C4
GND
I/O
C8
DET DET
GND
GND
GND
1.8 V to 5.5 V 2.7 V to 5.5 V
P3
P2
P1
P0
3
1
2
14
13
15
5
10
GND
7
9
11
8
1
2
3
4
5
6
7
8
MPU or Microcontroller
NCN4555
SIM_RST
SIM_CLK
SIM_I/O
RST
CLK
I/O
V
DD
STOP
MOD_V
CC
SIM_V
CC
V
CC
1mF
0.1mF0.1mF
SIM Card
Detect
V
BB
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
QFN−16
MN SUFFIX
CASE 488AK
MARKING DIAGRAM
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1
16
1
Device Package Shipping
ORDERING INFORMATION
NCN4555MN QFN−16 123 Units / Rail
NCN4555MNR2 QFN−16 3000/Tape & Ree
l
NCN4555MNG QFN−16
(Pb−Free)
123 Units / Rail
NCN4555MNR2G QFN−16
(Pb−Free)
3000/Tape & Ree
l
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
NCN
4555
ALYWG
G
NCN4555
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2
V
BAT
NC SIM_V
CC
SIM_I/O
NC I/O RST CLK
NC
SIM_CLK
GND
SIM_RST
STOP
V
DD
MOD_V
CC
NC
5678
16 15 14 13
12
11
10
9
1
2
3
4
NCN4555
Exposed Pad (EP)
Figure 2. QFN−16 Pinout (Top View)
Figure 3. NCN4555 Block Diagram
1
3
14
13
2
15
5
I/O
I/O
DATADATA
GND
GND
GND
GND
GND
GND
50 mA LDO
RST
CLK
I/O
SIM_RST
SIM_CLK
SIM_I/O
GND
7
9
8
11
10
SIM_V
CC
STOP
MOD_V
CC
V
DD
(1.8 V to 5.5 V)
V
BAT
(2.7 V to 5.5 V)
1.8 V/3.0 V
14 kW
18 kW
NCN4555
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3
PIN DESCRIPTIONS
PIN Name Type Description
1 STOP INPUT Power Down Mode pin:
STOP = Low ³ Low current shutdown mode activated
STOP = High ³ Normal Operation
A Low level on this pin resets the SIM interface, switching off the SIM_V
CC
.
2 MOD_V
CC
INPUT The signal present on this pin programs the SIM_V
CC
value:
MOD_V
CC
= Low ³ SIM_V
CC
= 1.8 V
MOD_V
CC
= High ³ SIM_V
CC
= 3 V
3 V
DD
POWER This pin is connected to the system controller power supply. It configures the level shifter input
stage to accept the signals coming from the microprocessor. A 0.1 mF capacitor shall be used to
bypass the power supply voltage. When V
DD
is below 1.1 V typical the SIM_V
CC
is disabled. The
NCN4555 comes into a shutdown mode.
4 NC No Connect
5 V
BAT
POWER DC−DC converter supply input. The input voltage ranges from 2.7V up to 5.5V. This pin has to be
bypass by a 0.1 mF capacitor.
6 NC No Connect
7 SIM_V
CC
POWER This pin is connected to the SIM card power supply pin. An internal LDO converter is
programmable by the external MPU to supply either 1.8 V or 3.0 V output voltage. An external
1.0 mF minimum ceramic capacitor recommended must be connected across SIM_V
CC
and GND.
During a normal operation, the SIM_V
CC
voltage can be set to 1.8 V followed by a 3.0 V value, or
can start directly to any of these two values.
8 SIM_I/O INPUT/
OUTPUT
This pin handles the connection to the serial I/O of the card connector. A bidirectional level
translator adapts the serial I/O signal between the card and the micro controller. A 14 kW (typical)
pullup resistor provides a High impedance state for the SIM card I/O link.
9 SIM_RST OUTPUT This pin is connected to the RESET pin of the card connector. A level translator adapts the
external Reset (RST) signal to the SIM card.
10 GND GROUND This pin is the GROUND reference for the integrated circuit and associated signals. Care must be
taken to avoid voltage spikes when the device operates in a normal operation.
11 SIM_CLK OUTPUT This pin is connected to the CLOCK pin of the card connector. The CLOCK (CLK) signal comes
from the external clock generator, the internal level shifter being used to adapt the voltage defined
for the SIM_V
CC
.
12 NC No Connect
13 CLK INPUT The clock signal, coming from the external controller, must have a Duty Cycle within the Min/Max
values defined by the specification (typically 50%). The built−in level shifter translates the input
signal to the external SIM card CLK input.
14 RST INPUT The RESET signal present at this pin is connected to the SIM card through the internal level
shifter which translates the level according to the SIM_V
CC
programmed value.
15 I/O INPUT/
OUTPUT
This pin is connected to an external microcontroller or cellular phone management unit. A
bidirectional level translator adapts the serial I/O signal between the smart card and the external
controller. A built−in constant 18 kW (typical) resistor provides a high impedance state when not
activated.
16 NC No Connect

NCN4555MNR2

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
IC TRNSLTR BIDIRECTIONAL 16QFN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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