NCN4555
http://onsemi.com
4
ATTRIBUTES
Characteristics Values
ESD protection
HBM, SIM card pins (7, 8, 9, 10 & 11) (Note 1)
HBM, All other pins (Note 1)
MM, SIM card pins (7, 8, 9, 10 & 11) (Note 2)
MM, All other pins (Note 2)
CDM, SIM card pins (7, 8, 9, 10 & 11) (Note 3)
CDM , All other pins (Note 3)
> 7 kV
> 2 kV
> 600 V
> 200 V
> 2 kV
> 600 V
Moisture sensitivity (Note 4) QFN−16 Level 1
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. Human Body Model, R =1500 W, C = 100 pF.
2. Machine Model.
3. CDM, Charged Device Model.
4. For additional information, see Application Note AND8003/D.
MAXIMUM RATINGS (Note 5)
Rating Symbol Value Unit
LDO Power Supply Voltage V
BAT
−0.5 V
BAT
6 V
Power Supply from Microcontroller Side V
DD
−0.5 V
DD
6 V
External Card Power Supply SIM_V
CC
−0.5 SIM_V
CC
6 V
Digital Input Pins V
in
I
in
−0.5 V
in
V
DD
+ 0.5
but < 6.0
±5
V
mA
Digital Output Pins V
out
I
out
−0.5 V
out
V
DD
+ 0.5
but < 6.0
±10
V
mA
SIM card Output Pins V
out
I
out
−0.5 V
out
SIM_V
CC
+ 0.5
but < 6.0
15 (internally limited)
V
mA
QFN−16 Low Profile package
Power Dissipation @ T
A
= + 85°C
Thermal Resistance Junction−to−Air
P
D
R
q
JA
440
90
mW
°C/W
Operating Ambient Temperature Range T
A
−25 to +85 °C
Operating Junction Temperature Range T
J
−25 to +125 °C
Maximum Junction Temperature T
Jmax
+125 °C
Storage Temperature Range T
stg
−65 to + 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
5. Maximum electrical ratings are defined as those values beyond which damage to the device may occur at T
A
= +25°C
NCN4555
http://onsemi.com
5
POWER SUPPLY SECTION (−25°C to +85°C)
Pin Symbol Rating Min Typ Max Unit
5 V
BAT
Power Supply 2.7 5.5 V
5 I
VBAT
Operating current – I
CC
= 0 mA (Note 6) 22 30
mA
5 I
VBAT_SD
Shutdown current – STOP= Low (Note 7) 3.0
mA
3 V
DD
Operating Voltage 1.8 5.5 V
3 I
VDD
Operating Current – f
CLK
= 1 MHz (Note 8) 7.0 12
mA
3 I
VDD_SD
Shutdown Current – STOP = Low 1.0
mA
3 V
DD
Undervoltage Lockout 0.6 1.5 V
7 SIM_V
CC
MOD_V
CC
= High, V
BAT
= 3.0 V, I
SIM_VCC
= 50 mA
MOD_V
CC
= High, V
BAT
= 3.3 V to 5.5 V, I
SIM_VCC
= 0 mA to 50 mA
MOD_V
CC
= Low, V
BAT
= 2.7 V to 5.5 V, I
SIM_VCC
= 0 mA to 50 mA
2.8
1.7
2.8
3.0
1.8
3.2
1.9
V
V
V
7 I
SIM_VCC_SC
Short –Circuit Current – SIM_V
CC
shorted to ground , T
A
=25°C 175 mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
6. As long as V
BAT
– V
DD
v
2.5 V. For V
BAT
– V
DD
> 2.5 V the maximum value increases up to 35 mA (typical being in the +25 mA range).
7. As long as V
BAT
– V
DD
v
2.5 V.
8. Guaranteed by design over the operating temperature range specified.
DIGITAL INPUT/OUTPUT SECTION CLOCK, RESET, I/O, STOP, MOD_V
CC
Pin Symbol Rating Min Typ Max Unit
1,2, 13,
14, 15
V
in
I
IH
& I
IL
Input Voltage Range (STOP, MOD_V
CC
, RST, CLK, I/O)
Input Current (STOP, MOD_V
CC
, RST, CLK)
0
−100
V
DD
100
V
nA
13, 14 V
IH
V
IL
High Level Input Voltage (RST, CLK)
Low Level Input Voltage (RST, CLK)
0.7 * V
DD
V
DD
0.2 * V
DD
V
V
1, 2 V
IH
V
IL
High Level Input Voltage (STOP, MOD_V
CC
)
Low Level Input Voltage (STOP, MOD_V
CC
)
0.7 * V
DD
0
V
DD
0.4
V
V
15 V
OH_I/O
V
OL_I/O
I
IH
I
IL
High Level Output Voltage (SIM_I/O = SIM_V
CC
, I
OH_I/O
= −20 mA)
Low Level Output Voltage (SIM_I/O = 0 V, I
OH_I/O
= 200 mA)
High Level Input Current (I/O)
Low Level Input Current (I/O)
0.7 * V
DD
0
−20
V
DD
0.4
20
1.0
V
V
mA
mA
15 R
pu_I/O
I/0 Pullup Resistor 12 18 24
kW
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
NCN4555
http://onsemi.com
6
SIM INTERFACE SECTION (Note 9)
Pin Symbol Rating Min Typ Max Unit
9 SIM_RST SIM_V
CC
= +3.0 V (MOD_V
CC
= High)
Output RESET V
OH
@ I
sim_rst
= −20 mA
Output RESET V
OL
@ I
sim_rst
= +200 mA
Output RESET Rise Time @ Cout = 30 pF
Output RESET Fall Time @ Cout = 30 pF
SIM_V
CC
= +1.8 V (MOD_V
CC
= Low)
Output RESET V
OH
@ I
sim_rst
= −20 mA
Output RESET V
OL
@ I
sim_rst
= +200 mA
Output RESET Rise Time @ Cout = 30 pF
Output RESET Fall Time @ Cout = 30 pF
0.9 * SIM_V
CC
0
0.9 * SIM_V
CC
0
SIM_V
CC
0.4
1
1
SIM_V
CC
0.4
1
1
V
V
ms
ms
V
V
ms
ms
11 SIM_CLK SIM_V
CC
= +3.0 V (MOD_V
CC
= High)
Output Duty Cycle
Max Output Frequency
Output V
OH
@ I
sim_clk
= −20 mA
Output V
OL
@ I
sim_clk
= +200 mA
Output SIM_CLK Rise Time @ Cout = 30 pF
Output SIM_CLK Fall Time @ Cout = 30 pF
SIM_V
CC
= +1.8 V (MOD_V
CC
= Low)
Output Duty Cycle
Max Output Frequency
Output V
OH
@ I
sim_clk
= −20 mA
Output V
OL
@ I
sim_clk
= +200 mA
Output SIM_CLK Rise Time @ Cout = 30 pF
Output SIM_CLK Fall Time @ Cout = 30 pF
40
5
0.9 * SIM_V
CC
0
40
5
0.9 * SIM_V
CC
0
60
SIM_V
CC
0.4
18
18
60
SIM_V
CC
0.4
18
18
%
MHz
V
V
ns
ns
%
MHz
V
V
ns
ns
8 SIM_I/O SIM_V
CC
= +3.0 V (MOD_V
CC
= High)
Output V
OH
@ I
SIM_IO
= −20 mA, V
I/O
= V
DD
Output V
OL
@ I
SIM_IO
= +1 mA, V
I/O
= 0 V
SIM_I/O Rise Time @ C
out
= 30 pF
SIM_I/O Fall Time @ C
out
= 30 pF
SIM_V
CC
= +1.8 V (MOD_V
CC
= High)
Output V
OH
@ I
SIM_IO
= −20 mA, V
I/O
=V
DD
Output V
OL
@ I
SIM_IO
= +1.0 mA, V
I/O
= 0 V
SIM_I/O Rise Time @ C
out
= 30 pF
SIM_I/O Fall Time @ C
out
= 30 pF
0.8 * SIM_V
CC
0
0.8 * SIM_V
CC
0
SIM_V
CC
0.4
1
1
SIM_V
CC
0.3
1
1
V
V
ms
ms
V
V
ms
ms
8 R
pu_SIM_I/O
Card I/O Pullup Resistor 10 14 18
kW
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
9. All the dynamic specifications (AC specifications) are guaranteed by design over the operating temperature range.

NCN4555MNR2

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
IC TRNSLTR BIDIRECTIONAL 16QFN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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